Copper complexes and process for formatiom of copper-containing thin films by using the same
申请人:Kadota Takumi
公开号:US20050080282A1
公开(公告)日:2005-04-14
Copper-containing thin films can be industrially advantageously formed by chemical vapor deposition using as the copper source a divalent copper complex bearing β-diketonato ligands having silyl ether linkage. A representative example of the divalent copper complex is represented by the formula (I):
wherein Z is hydrogen or alkyl; X is a group represented by the formula (I-I), in which R
a
is alkylene, and each of R
b
, R
c
and R
d
is alkyl; and Y is an alkyl group or a group represented by the formula (I-I), in which R
a
is alkylene, and each of R
b
, R
c
and R
d
is alkyl.