2-丁氧基戊烷 | 62238-02-2

• 分子结构分类: 有机化合物 - 有机氧化合物
• 中文名称: 2-丁氧基戊烷
• 英文名称: 2-Butoxypentane
• CAS: 62238-02-2
• 化学式: C₉H₂₀O
• 分子量: 144.25
• InChiKey: PSYBYBKGIJCLDM-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3
• 重原子数：
  10
• 可旋转键数：
  6
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  9.2
• 氢给体数：
  0
• 氢受体数：
  1

文献信息

• Sulfonamide compound, polymer compound, resist material and pattern formation method
  申请人：Kishimura Shinji

  公开号：US20070099117A1

  公开（公告）日：2007-05-03

  A base polymer of a resist material includes a unit represented by a general formula of the following Chemical Formula 3: wherein R 1 , R 2 and R 3 are the same or different and are a hydrogen atom, a fluorine atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R 4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; and R 5 and R 6 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group, a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid.
• RESIST POLYMER AND RESIST COMPOSITION
  申请人：MOMOSE Hikaru

  公开号：US20090263743A1

  公开（公告）日：2009-10-22

  The resist polymer of the present invention comprises a specific constitutional unit having a cyano group, a constitutional unit having an acid-dissociable group, and a specific constitutional unit having a lactone skeleton. When the above polymer is used as a resist resin in DUV excimer laser lithography or electron beam lithography, it exhibits high sensitivity and high resolution, and provides a good resist pattern shape, having a small degree of occurrence of line edge roughness or generation of microgels.
• US4323712A
  申请人：——

  公开号：US4323712A

  公开（公告）日：1982-04-06
• US7169530B2
  申请人：——

  公开号：US7169530B2

  公开（公告）日：2007-01-30
• US7166418B2
  申请人：——

  公开号：US7166418B2

  公开（公告）日：2007-01-23