3-Ethyl-3-(2-hydroxyethyl)pentane-1,5-diol | 18733-05-6

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: 3-Ethyl-3-(2-hydroxyethyl)pentane-1,5-diol
• CAS: 18733-05-6
• 化学式: C₉H₂₀O₃
• 分子量: 176.25
• InChiKey: XDBVUAKSGMWTOQ-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  0.4
• 重原子数：
  12
• 可旋转键数：
  7
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  60.7
• 氢给体数：
  3
• 氢受体数：
  3

文献信息

• 1,4-Dihydropyridine charge control agents for electrostatographic toners and developers
  申请人：EASTMAN KODAK COMPANY

  公开号：EP1109070A2

  公开（公告）日：2001-06-20

  A charge control agent is disclosed selected from the group consisting of 1,4-dihydropyridines having the following general structure: where R1, R2, R3, R4, R5, X, and Z are defined in the specification. These compounds are useful in electrostatographic toners and developers.

  本发明公开了一种电荷控制剂，它选自具有以下一般结构的 1,4-二氢吡啶类： 其中 R1、R2、R3、R4、R5、X 和 Z 的定义见说明书。这些化合物适用于电致发光调色剂和显影剂。
• 2-(1,2-benzisothiazol-3(2h)-ylidene 1,1-dioxide)acetamides negative charge control agents for electrostatographic toners and developers
  申请人：EASTMAN KODAK COMPANY

  公开号：EP1109071A1

  公开（公告）日：2001-06-20

  The invention, in its broader aspects provides an electrophotographic toner having polymeric binder and 2-(1,2-benzisothiazol-3(2H)-ylidene 1,1-dioxide)acetamides as charge control agent. wherein n is 1 or 3; R and R1 are defined in the specification. The compounds are useful as charge-control agents in electrostatographic toners and developers.

  本发明在更广泛的方面提供了一种具有聚合物粘合剂和 2-(1,2-苯并异噻唑-3(2H)-亚基 1,1-二氧化物)乙酰胺作为电荷控制剂的电子照相调色剂，其中 n 为 1 或 3；R 和 R1 在说明书中定义。 这些化合物可用作电静电显像调色剂和显影剂中的电荷控制剂。
• Composition for forming silicon-containing film, silicon-containing film-formed substrate and patterning process
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2172807A1

  公开（公告）日：2010-04-07

  There is disclosed a thermosetting composition for forming a silicon-containing film to form a silicon-containing film formed in a multilayer resist process used in lithography, including at least (A) a silicon-containing compound obtained by hydrolyzing and condensing a hydrolyzable silicon compound using an acid as a catalyst, (B) a thermal crosslinking accelerator (C) a monovalent or bivalent or more organic acid having 1 to 30 carbon atoms, (D) trivalent or more alcohol and (E) an organic solvent. There can be provided a composition for a silicon-containing film which can form a good pattern in a photoresist film, can form a silicon-containing film for an etching mask having a good dry etching resistance, can give a good storage stability and can be delaminated with a solution used in a delamination process in a multilayer resist process used for lithography, a substrate on which the silicon-containing film is formed, and further a method for forming a pattern.

  本发明公开了一种用于形成含硅薄膜的热固性组合物，该组合物用于形成在光刻中使用的多层抗蚀剂工艺中形成的含硅薄膜，至少包括(A)通过使用酸作为催化剂水解和缩合可水解硅化合物而获得的含硅化合物，(B)热交联促进剂，(C)具有 1 至 30 个碳原子的一价或二价或更多有机酸，(D)三价或更多醇，以及(E)有机溶剂。本发明可以提供一种含硅薄膜的组合物，该组合物可以在光刻胶膜中形成良好的图案，可以形成用于蚀刻掩膜的含硅薄膜，该薄膜具有良好的耐干蚀刻性，可以提供良好的储存稳定性，并且可以用用于光刻的多层抗蚀剂工艺中的分层工艺中使用的溶液进行分层，还可以提供一种在其上形成含硅薄膜的基底，以及进一步提供一种形成图案的方法。
• Composition for forming a coating type BPSG film, substrate formed a film by said composition, and patterning process using said composition
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2826826A1

  公开（公告）日：2015-01-21

  The present invention provides a composition for forming a coating type BPSG film, which comprises: one or more structures comprising a silicic acid represented by the following general formula (1) as a skeletal structure, one or more structures comprising a phosphoric acid represented by the following general formula (2) as a skeletal structure and one or more structures comprising a boric acid represented by the following general formula (3) as a skeletal structure. There can be provided a composition for forming a coating type BPSG film which is excellent in adhesiveness in fine pattern, can be easily wet etched by a peeling solution which does not cause any damage to the semiconductor apparatus substrate, the coating type organic film or the CVD film mainly comprising carbon which are necessary in the patterning process, and can suppress generation of particles by forming it in the coating process.

  本发明提供了一种用于形成涂层型 BPSG 薄膜的组合物，该组合物包括：由以下通式 (1) 所代表的硅酸作为骨架结构的一种或多种结构、由以下通式 (2) 所代表的磷酸作为骨架结构的一种或多种结构以及由以下通式 (3) 所代表的硼酸作为骨架结构的一种或多种结构。本发明可提供一种用于形成涂层型 BPSG 薄膜的组合物，该组合物在精细图案方面具有优异的粘附性，可通过剥离溶液轻松进行湿蚀刻，不会对半导体设备基板、涂层型有机薄膜或图案化过程中所需的主要由碳构成的 CVD 薄膜造成任何损害，并且通过在涂层过程中形成该组合物，可抑制颗粒的生成。
• Metal oxide-containing film-forming composition metal oxide-containing film-formed substrate, and patterning process
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2172808B1

  公开（公告）日：2014-06-04