1-(2-sec-butoxy-1-methyl-ethoxy)-propan-2-ol | 58797-52-7

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: 1-(2-sec-butoxy-1-methyl-ethoxy)-propan-2-ol
• 英文别名: 1-(1-Butan-2-yloxypropan-2-yloxy)propan-2-ol
• CAS: 58797-52-7
• 化学式: C₁₀H₂₂O₃
• 分子量: 190.283
• InChiKey: IYVQMRHAIBCUBX-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.4
• 重原子数：
  13
• 可旋转键数：
  7
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  38.7
• 氢给体数：
  1
• 氢受体数：
  3

反应信息

• 作为产物：
  描述：

  钠丁烷-2-醇 、 methyloxirane 以 仲丁醇 为溶剂， 生成 1-(2-sec-butoxy-1-methyl-ethoxy)-propan-2-ol
  参考文献：
  名称：

  Chlebicki,J., Roczniki Chemii, 1974, vol. 48, p. 1241 - 1253

  摘要：

  DOI：

文献信息

• MATERIAL FOR FORMING ORGANIC FILM, METHOD FOR FORMING ORGANIC FILM, PATTERNING PROCESS, AND COMPOUND
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20210286266A1

  公开（公告）日：2021-09-16

  The present invention is a material for forming an organic film, including: a compound shown by the following general formula (1); and an organic solvent, where in the general formula (1), X represents an organic group with a valency of “n” having 2 to 50 carbon atoms or an oxygen atom, “n” represents an integer of 1 to 10 , and R 1 independently represents any of the following general formulae (2), where in the general formulae (2), broken lines represent attachment points to X, and Q 1 represents a monovalent organic group containing a carbonyl group, at least a part of which is a group shown by the following general formulae (3), where in the general formulae (3), broken lines represent attachment points, X 1 represents a single bond or a divalent organic group having 1 to 20 carbon atoms optionally having a substituent when the organic group has an aromatic ring, R 2 represents a hydrogen atom, a methyl group, an ethyl group, or a phenyl group, and ** represents an attachment point. An object of the present invention is to provide a material for forming an organic film for forming an organic film having dry etching resistance, and also having high filling and planarizing properties and adhesion to a substrate.

  本发明是一种用于形成有机薄膜的材料，包括：由以下通用式（1）所示的化合物；和有机溶剂，在通用式（1）中，X代表具有2至50个碳原子或一个氧原子的价为“n”的有机基团，“n”表示1到10的整数，R1独立地表示以下通用式（2）中的任何一种，其中在通用式（2）中，虚线表示连接点到X，Q1表示含有羰基的一价有机基团，其中至少部分是以下通用式（3）所示的基团，其中在通用式（3）中，虚线表示连接点，X1表示单键或具有1到20个碳原子的二价有机基团，在有机基团具有芳香环时可选地具有取代基，R2表示氢原子、甲基基团、乙基基团或苯基团，**表示连接点。本发明的目的是提供一种用于形成具有干法刻蚀抗性的有机薄膜的材料，同时具有高填充和平整化性能以及对基底的粘附性。
• NEGATIVE PHOTOSENSITIVE RESIN COMPOSITION, CURED FILM, ELEMENT PROVIDED WITH CURED FILM, DISPLAY DEVICE PROVIDED WITH ELEMENT, AND ORGANIC EL DISPLAY
  申请人：TORAY INDUSTRIES, INC.

  公开号：US20190302617A1

  公开（公告）日：2019-10-03

  The present invention provides a negative photosensitive resin composition that has high pigment dispersibility and stability and can reduce residues of unexposed portions during development. The present invention provides a negative photosensitive resin composition containing an (A) alkali-soluble resin, a (B) dispersant having an amine value exceeding 0, a (C) benzofuranone based organic pigment having an amide structure, a (D) radical polymerizable compound, and a (E) photoinitiator. In this negative photosensitive resin composition, the (A) alkali-soluble resin contains one or more selected from the group consisting of a (A1) polyimide, a (A2) polyimide precursor, a (A3) polybenzoxazole, and a (A4) polybenzoxazole precursor, and the (B) dispersant having an amine value exceeding 0 contains a (B1) dispersant including a repeating unit represented by general formula (2) and a repeating unit represented by general formula (3) and a (B2) dispersant that is an acrylic block copolymer having an amine value of 15 to 60 mgKOH/g and/or a (B3) dispersant having a urethane bond. (In general formula (2), R 1 represents an alkylene group. R 2 and R 3 , which may be the same or different, each represents hydrogen, an alkyl group or a hydroxyl group. x represents an integer of 0 to 20. However, when x is 0, at least one of R 2 and R 3 is an alkyl group. m represents an integer of 1 to 100. In general formula (3), n represents an integer of 1 to 100.)

  本发明提供了一种具有高颜料分散性和稳定性的负性感光树脂组合物，可以减少在显影过程中未曝光部分的残留物。本发明提供了一种包含（A）可溶于碱性树脂、（B）胺值超过0的分散剂、（C）苯并呋喃酮基有机颜料（具有酰胺结构）、（D）自由基聚合化合物和（E）光引发剂的负性感光树脂组合物。在这种负性感光树脂组合物中，（A）可溶于碱性树脂包含从以下组中选择的一种或多种：（A1）聚酰亚胺、（A2）聚酰亚胺前体、（A3）聚苯并噁唑和（A4）聚苯并噁唑前体；而具有胺值超过0的（B）分散剂包括具有由通用公式（2）表示的重复单元和由通用公式（3）表示的重复单元的（B1）分散剂，以及胺值为15至60 mgKOH/g的丙烯酸酯嵌段共聚物（B2）和/或具有脲键的（B3）分散剂。（在通用公式（2）中，R1表示烷基基团。R2和R3，可能相同也可能不同，每个表示氢、烷基基团或羟基。x表示0到20的整数。但是，当x为0时，R2和R3中至少有一个是烷基基团。m表示1到100的整数。在通用公式（3）中，n表示1到100的整数。）
• COMPOUND FOR FORMING ORGANIC FILM, COMPOSITION FOR FORMING ORGANIC FILM, METHOD FOR FORMING ORGANIC FILM, AND PATTERNING PROCESS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20170184968A1

  公开（公告）日：2017-06-29

  A compound for forming an organic film shown by the formula (1A), R—(—X) m1 (1A) wherein R represents a single bond or an organic group having 1 to 50 carbon atoms; X represents a group shown by formula (1B); and ml represents an integer satisfying 2≦m1≦10, wherein X 2 represents a divalent organic group having 1 to 10 carbon atoms; n1 represents 0 or 1; n2 represents 1 or 2; X 3 represents a group shown by the formula (1C); and n5 represents 0, 1, or 2, wherein R 10 represents a hydrogen atom or a saturated or unsaturated hydrocarbon group having 1 to 10 carbon atoms, wherein a hydrogen atom of the benzene ring in formula (1C) may be substituted with a methyl group or methoxy group. This compound for forming an organic film can provide organic film composition having good dry etching resistance, heat resistance to 400° C. or higher, high filling and planarizing properties.

  一种用于形成有机薄膜的化合物，其化学式为(1A)，R—(—X)m1(1A)，其中R代表一个单键或具有1至50个碳原子的有机基团；X代表化学式(1B)所示的基团；m1代表满足2≦m1≦10的整数，其中X2代表具有1至10个碳原子的二价有机基团；n1代表0或1；n2代表1或2；X3代表化学式(1C)所示的基团；n5代表0、1或2，其中R10代表氢原子或具有1至10个碳原子的饱和或不饱和碳氢基团，化学式(1C)中苯环的氢原子可能被甲基基团或甲氧基取代。这种用于形成有机薄膜的化合物可以提供具有良好干法刻蚀抗性、耐高温至400°C或更高、高填充和平整化性能的有机薄膜组合物。
• RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20180284615A1

  公开（公告）日：2018-10-04

  Provided is a resist underlayer film composition which is excellent in resistance to a basic hydrogen peroxide aqueous solution, in gap-filling and planarization characteristics, and in dry etching characteristic, wherein the resist underlayer film composition is used for a multilayer resist method, comprising: (A1) a polymer (1A) comprising one, or two or more, of a repeating unit represented by following general formula (1); (A2) one, or two or more, of a polyphenol compound having a formula weight of 2,000 or less and not having a 3,4-dihydroxy phenyl group; and (B) an organic solvent.

  提供了一种抗碱性过氧化氢水溶液、填孔和平坦化特性以及干法蚀刻特性优异的抗蚀底层膜组合物，该抗蚀底层膜组合物用于多层光刻方法，包括：（A1）聚合物（1A），其包括由以下通式（1）表示的重复单元中的一个或两个或多个；（A2）一种或两种或多种分子量不超过2000且不具有3,4-二羟基苯基的多酚化合物；和（B）有机溶剂。
• RESIST UNDERLAYER FILM MATERIAL, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20210397092A1

  公开（公告）日：2021-12-23

  A resist underlayer film material used in multilayer resist method contains (A) compound shown by following general formula (1), and (B) organic solvent, where X independently represents monovalent organic group shown by following general formula (2); W contains an “m” number of partial structures each independently shown by following formula (3); “m” and “n” each represent an integer of 1 to 10; broken lines represent bonding arms; Z represents aromatic group; A represents single bond or —O—(CH 2 ) p —; “k” represents integer of 1 to 5; “p” represents integer of 1 to 10; R 01 represents hydrogen atom or monovalent organic group having 1 to 10 carbon atoms. Material is capable of forming resist underlayer film excellent in planarizing property in fine patterning process by multilayer resist method in semiconductor-device manufacturing process; and patterning processes and methods for forming resist underlayer film use material.

  多层光刻法中使用的抗蚀底层膜材料包含以下通式（1）所示的化合物（A）和有机溶剂（B），其中X独立地表示由以下通式（2）所示的一价有机基团；W包含“m”个部分结构，每个部分结构都独立地由以下式（3）所示；“m”和“n”分别表示1到10的整数；断裂的线表示连接臂；Z表示芳香基团；A表示单键或—O—（CH2）p—；“k”表示1到5的整数；“p”表示1到10的整数；R01表示氢原子或具有1到10个碳原子的一价有机基团。该材料能够形成在半导体器件制造过程中通过多层光刻法具有平坦化性能的抗蚀底层膜，以及用于形成抗蚀底层膜的图案化过程和方法。