Thiazole- and imidazole-containing peptidomimetic inhibitors of protein farnesyltransferase
摘要:
Mimetics of the C-terminal CAAX tetrapeptide of Ras protein were designed replacing internal dipeptide AA with 4-amino-2-phenylbenzoic acid and cysteine (C) with 2-amino-4-thiazolyl-, 2-mercapto-4-thiazolyl-, 2-mercapto-4-imidazolyl- and 2-methylmercapto-4-thiazolyl-acetic or propionic acid. The compound in which C is replaced by 2-amino-4-thiazolylacetic acid inhibited FTase activity in the low nanomolar range and showed antiproliferative effect on rat aortic smooth muscle cells interfering with Ras farnesylation. On the basis of these results, 2-aminothiazole can be considered as an alternative to heterocycles, such as pyridine and imidazole, normally used in FTase inhibitors designed as non-thiol CAAX mimetics. (C) 2011 Elsevier Ltd. All rights reserved.
Thiazole- and imidazole-containing peptidomimetic inhibitors of protein farnesyltransferase
摘要:
Mimetics of the C-terminal CAAX tetrapeptide of Ras protein were designed replacing internal dipeptide AA with 4-amino-2-phenylbenzoic acid and cysteine (C) with 2-amino-4-thiazolyl-, 2-mercapto-4-thiazolyl-, 2-mercapto-4-imidazolyl- and 2-methylmercapto-4-thiazolyl-acetic or propionic acid. The compound in which C is replaced by 2-amino-4-thiazolylacetic acid inhibited FTase activity in the low nanomolar range and showed antiproliferative effect on rat aortic smooth muscle cells interfering with Ras farnesylation. On the basis of these results, 2-aminothiazole can be considered as an alternative to heterocycles, such as pyridine and imidazole, normally used in FTase inhibitors designed as non-thiol CAAX mimetics. (C) 2011 Elsevier Ltd. All rights reserved.
[EN] PROCESS FOR SYNTHESIZING ERGOTHIONEINE AND RELATED COMPOUNDS<br/>[FR] PROCÉDÉS DE SYNTHÈSE DE L'ERGOTHIONÉINE ET DE COMPOSÉS APPARENTÉS
申请人:UNIV CAPE TOWN
公开号:WO2016046618A1
公开(公告)日:2016-03-31
The invention provides a process for synthesising a compound of formula (V) wherein: formula (z) or a physiologically acceptable salt, tautomer, stereoisomer or mixture of stereoisomers thereof. The process utilizes a /V-benzyl protected histidine rather than the unprotected form of histidine. The process of the invention comprises the steps of: (a) deprotecting a /V-benzyl protected histidine of formula 11 to form A/-benzyl histidine of formula 12; (b) converting compound 12 to (S)-3-(1 -benzyl-1 H-imidazol-4-yl)-2-(dimethylamino)propanoic acid of formula 13; (c) converting compound 13 to (2S)-N,N,N-2-trimethylethanaminium-3-(1 -benzyl- 1H-imidazol-4-yl)propanoic acid of formula 14; (d) brominating the imidazole ring of the compound of formula 14 to form 5-bromohercynine lactone (reactive intermediate); and (e) converting the 5-bromohercynine lactone of step (d) to (p-amino-p- carboxyethyl)ergothioneine sulfide of formula 15. The process optionally further includes one of steps (f) to (h): (f) converting the compound of formula 15 to a sulfoxide; (g) converting the compound of formula 15 to a sulfone; or (h) converting the compound of formula 15 to ergothioneine (ESH).
NALPHA, NALPHA, NALPHA-TRIALKYL HISTIDINE DERIVATIVES USEFUL FOR THE PREPARATION OF ERGOTHIONEINE COMPOUNDS
申请人:Mironova Innovations, LLC
公开号:EP3268354B1
公开(公告)日:2020-05-06
CONDUCTIVE FILM FORMING COMPOSITION, CONDUCTIVE FILM, AND WIRING BOARD
申请人:FUJIFILM Corporation
公开号:US20160021741A1
公开(公告)日:2016-01-21
A conductive film forming composition includes a fluorine atom-containing migration inhibitor and a metal particle, with the migration inhibitor including at least one selected from the group consisting of compounds represented by General Formulae (1) to (5), (22) and (23) as well as compounds having a group of General Formula (24) and a group of General Formula (25). The conductive film forming composition makes it possible to form a conductive film excellent in conductive characteristics and ion migration inhibiting function.
The present invention provides an organic semiconductor composition, which improves the insulation reliability of an organic thin-film transistor without greatly reducing the mobility of the organic thin-film transistor, an organic thin-film transistor which is formed by using the organic semiconductor composition, and electronic paper and a display device which use the organic thin-film transistor. The organic semiconductor composition of the present invention contains an organic semiconductor material and an F-containing migration inhibitor selected from the group consisting of a compound represented by any of Formulae (1) to (8), a polymer compound (X) containing a repeating unit represented by Formula (A), and a polymer compound (Y) containing a repeating unit represented by Formula (B) and a repeating unit represented by Formula (C).
COMPOSITION FOR FORMING GATE INSULATING FILM, ORGANIC THIN FILM TRANSISTOR, ELECTRONIC PAPER, AND DISPLAY DEVICE
申请人:FUJIFILM Corporation
公开号:US20160087208A1
公开(公告)日:2016-03-24
The present invention provides a composition for forming a gate insulating film, which improves the insulation reliability of an organic thin film transistor without greatly reducing the mobility of the organic thin film transistor, an organic thin film transistor, electronic paper, and a display device. The composition for forming a gate insulating film of the present invention contains an insulating material and a migration inhibitor selected from the group consisting of a compound represented by any of Formulae (1) to (8), a polymer compound (X) containing a repeating unit represented by Formula (A), and a polymer compound (Y) containing a repeating unit represented by Formula (B) and a repeating unit represented by Formula (C).