Chemical or electrochemical oxidation of substituted dithieno[3,4-b:3â²,4â²-d]thiophenes provides polymers with defined regiochemical structures. These materials have lower bandgaps (0.7-0.9 eV) than the unsubstituted fused heteroarene. Potential cycling of the 1,3-dimethyl substituted polymer film shows repetitive p- and n-dopability. The chemically-prepared dioctyl analog is soluble in common solvents such as chloroform, dichloromethane and THF. However, overoxidation of the polymers at an electrode surface presents a limitation to the polymerization of substituted analogs of the parent fused heteroarene.
取代的二
噻吩[3,4-b:3'、4'-d]
噻吩的
化学或电
化学氧化可获得具有明确定构
化学结构的聚合物。这些材料的带隙(0.7-0.9 eV)低于未取代的融合杂环
芳烃。1,3-二甲基取代聚合物薄膜的潜在循环显示出重复的p-和n掺杂能力。
化学合成的二辛基类似物可溶于
氯仿、
二氯甲烷和
四氢呋喃等常见溶剂。然而,聚合物在电极表面的过氧化反应限制了母体融合杂环
芳烃取代类似物的聚合。