MATERIAL FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILM FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY AND PATTERN FORMING METHOD
申请人:Mitsubishi Gas Chemical Company, Inc.
公开号:US20180101096A1
公开(公告)日:2018-04-12
A material for forming an underlayer film for lithography, in which a compound represented by the following formula (0) is used.
(in formula (0), each X independently represents an oxygen atom or a sulfur atom, or a non-crosslinked state, R
1
represents a 2
n
-valent group having 1 to 30 carbon atoms, or a single bond, each R
0
independently represents a straight, branched or cyclic alkyl group having 1 to 30 carbon atoms, an aryl group having 6 to 30 carbon atoms, a straight, branched or cyclic alkenyl group having 2 to 30 carbon atoms, a thiol group, a halogen group, a nitro group, an amino group, a carboxylic acid group or a hydroxyl group, the alkyl group, the alkenyl group and the aryl group each optionally include a cyanato group, a thiol group, a halogen group, a nitro group, an amino group, a carboxylic acid group, a hydroxyl group, an ether bond, a ketone bond or an ester bond, each m
1
is independently an integer of 0 to 4, in which at least one m
1
is an integer of 1 to 4, each m
2
is independently an integer of 0 to 3, n is an integer of 1 to 4, and each p is independently 0 or 1.)
一种用于光刻的底层膜的材料,其中使用以下式(0)代表的化合物。(在式(0)中,每个X独立表示氧原子或硫原子,或非交联状态,R1表示具有1到30个碳原子的2n价基团,或者单键,每个R0独立表示具有1到30个碳原子的直链、支链或环烷基,具有6到30个碳原子的芳基,具有2到30个碳原子的直链、支链或环烯基,硫醇基,卤素基,硝基,氨基,羧基或羟基,烷基、烯基和芳基中每个可选包括氰酸基、硫醇基、卤素基、硝基、氨基、羧基、羟基、醚键、酮键或酯键,每个m1独立地为0到4的整数,其中至少一个m1为1到4的整数,每个m2独立地为0到3的整数,n为1到4的整数,每个p独立地为0或1。)