1,3-Bis(methoxymethyl)tetrahydro-2(1H)-pyrimidinon | 13747-15-4

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 二嗪类
• 英文名称: 1,3-Bis(methoxymethyl)tetrahydro-2(1H)-pyrimidinon
• 英文别名: 1,3-bis-methoxymethyl-tetrahydro-pyrimidin-2-one；1,3-Bis(methoxymethyl)tetrahydropyrimidin-2(1H)-one；1,3-bis(methoxymethyl)-1,3-diazinan-2-one
• CAS: 13747-15-4
• 化学式: C₈H₁₆N₂O₃
• 分子量: 188.227
• InChiKey: UZOPFGGJIFOEEY-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -0.2
• 重原子数：
  13
• 可旋转键数：
  4
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.88
• 拓扑面积：
  42
• 氢给体数：
  0
• 氢受体数：
  3

反应信息

• 作为反应物：
  描述：

  1,3-Bis(methoxymethyl)tetrahydro-2(1H)-pyrimidinon 在 potassium tert-butylate 、 氢溴酸 作用下， 以 四氢呋喃 为溶剂， 反应 4.17h， 生成 1,3-Bis<2-(4-bromphenyl)vinyl>-tetrahydro-2(1H)-pyrimidinon
  参考文献：
  名称：

  Reuther, Wolfgang; Ruland, Alfred, Liebigs Annalen der Chemie, 1982, # 2, p. 372 - 375

  摘要：

  DOI：

文献信息

• RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR USE IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM
  申请人：Mitsubishi Gas Chemical Company, Inc.

  公开号：US20160145231A1

  公开（公告）日：2016-05-26

  A resist composition containing a compound represented by the general formula (1) or (2), a method for forming a resist pattern using the composition, a polyphenolic compound for use in the composition, and an alcoholic compound that can be derived therefrom are described.

  描述了一种包含由通式（1）或（2）表示的化合物的光刻胶组合物，使用该组合物形成光刻胶图案的方法，用于该组合物的多酚化合物，以及可以由其衍生的醇化合物。
• OPTICAL COMPONENT FORMING COMPOSITION AND CURED PRODUCT THEREOF
  申请人：Mitsubishi Gas Chemical Company, Inc.

  公开号：US20200262787A1

  公开（公告）日：2020-08-20

  The present invention provides an optical component forming composition comprising a tellurium-containing compound or a tellurium-containing resin.

  本发明提供了一种包括含碲化合物或含碲树脂的光学元件成型组合物。
• PATTERNABLE LOW DIELECTRIC CONSTANT MATERIALS AND THEIR USE IN ULSI INTERCONNECTION
  申请人：Lin Qinghuang

  公开号：US20080063880A1

  公开（公告）日：2008-03-13

  The present invention relates to ultra-large scale integrated (ULSI) interconnect structures, and more particularly to patternable low dielectric constant (low-k) materials suitable for use in ULSI interconnect structures. The patternable low-k dielectrics disclosed herein are functionalized polymers that having one or more acid-sensitive imageable functional groups.

  本发明涉及超大规模集成（ULSI）互连结构，更具体地涉及适用于ULSI互连结构的可图案化低介电常数（低-k）材料。本发明所披露的可图案化低-k介电材料是具有一种或多种酸敏感可成像功能基团的功能化聚合物。
• CYCLIC COMPOUND, PRODUCTION PROCESS THEREOF, RADIATION-SENSITIVE COMPOSITION AND RESIST PATTERN FORMATION METHOD
  申请人：Takasuka Masaaki

  公开号：US20120282546A1

  公开（公告）日：2012-11-08

  Disclosed are: a cyclic compound which has high solubility in a safe solvent, is highly sensitive, enables the formation of a resist pattern having a good shape, and rarely causes resist pattern collapse; a process for producing the cyclic compound; a radiation-sensitive composition containing the cyclic compound; and a resist pattern formation method using the composition. Specifically disclosed are: a cyclic compound having a specific structure; a process for producing the cyclic compound; a radiation-sensitive composition containing the compound; and a resist pattern formation method using the composition.

  本发明涉及一种具有高溶解度、高灵敏度、能够形成良好形状的抗蚀图案，且很少引起抗蚀图案崩塌的环状化合物；一种制备该环状化合物的方法；一种含有该环状化合物的辐射敏感组合物；以及使用该组合物的抗蚀图案形成方法。具体揭示了一种具有特定结构的环状化合物，制备该环状化合物的方法，含有该化合物的辐射敏感组合物以及使用该组合物的抗蚀图案形成方法。
• DEVELOPABLE BOTTOM ANTIREFLECTIVE COATING COMPOSITIONS FOR NEGATIVE RESISTS
  申请人：CHEN KUANG-JUNG

  公开号：US20130040238A1

  公开（公告）日：2013-02-14

  A negative developable bottom antireflective coating (NDBARC) material includes a polymer containing an aliphatic alcohol moiety, an aromatic moiety, and a carboxylic acid moiety. The NDBARC composition is insoluble in a typical resist solvent such as propylene glycol methyl ether acetate (PGMEA) after coating and baking. The NDBARC material also includes a photoacid generator, and optionally a crosslinking compound. In the NDBARC material, the carboxylic acid provides the developer solubility, while the alcohol alone, the carboxylic acid alone, or their combination provides the PGMEA resistance. The NDBARC material has resistance to the resist solvent, and thus, intermixing does not occur between NDBARC and resist during resist coating over NDBARC. After exposure and bake, the lithographically exposed portions of both the negative photoresist and the NDBARC layer become insoluble in developer due to the chemically amplified crosslinking of the polymers in negative resist and NDBARC layer in the lithographically exposed portions.

  一种负可展性底部防反射涂层（NDBARC）材料，包括含有脂肪族醇基团、芳香基团和羧酸基团的聚合物。NDBARC组合物在涂覆和烘烤后，不溶于典型的抗蚀剂溶剂，如丙二醇甲醚乙酸酯（PGMEA）。NDBARC材料还包括光酸发生剂，以及可选的交联化合物。在NDBARC材料中，羧酸提供了开发剂的溶解性，而仅有醇，仅有羧酸或它们的组合提供了对PGMEA的抗性。NDBARC材料具有抗抗蚀剂溶剂的性能，因此，在涂覆NDBARC时，NDBARC和抗蚀剂之间不会发生混合。经过曝光和烘烤后，负光刻胶和NDBARC层的光刻曝光部分由于聚合物的化学增强交联而变得不溶于开发剂。