申请人:President and Fellows of Harvard College
公开号:US11161857B2
公开(公告)日:2021-11-02
Compounds are synthesized with bicyclic amidinate ligands attached to one or more metal atoms. These compounds are useful for the synthesis of materials containing metals. Examples include pure metals, metal alloys, metal oxides, metal nitrides, metal phosphides, metal sulfides, metal selenides, metal tellurides, metal borides, metal carbides, metal silicides and metal germanides. Techniques for materials synthesis include vapor deposition (chemical vapor deposition and atomic layer deposition), liquid solution methods (sol-gel and precipitation) and solid-state pyrolysis. Copper metal films are formed on heated substrates by the reaction of copper(I) bicyclic amidinate vapor and hydrogen gas, whereas reaction with water vapor produces copper oxide. Silver and gold films were deposited on surfaces by reaction of their respective bicyclic amidinate vapors with hydrogen gas. Reaction of cobalt(II) bis(bicyclic amidinate) vapor, ammonia gas and hydrogen gas deposits cobalt metal films on heated substrates, while reaction with ammonia produces cobalt nitride and reaction with water vapor produces cobalt oxide. Ruthenium metal films are deposited by reaction of ruthenium(II) bis(bicyclic amidinate) or ruthenium(III) tris(bicyclic amidinate) at a heated surface either with or without a co-reactant such as hydrogen gas or ammonia or oxygen. Suitable applications include electrical interconnects in microelectronics and magnetoresistant layers in magnetic information storage devices. Hafnium oxide films are deposited by reaction of hafnium(IV) tetrakis(bicyclic amidinate) with oxygen sources such as water, hydrogen peroxide or ozone. The HfO2 films have high dielectric constant and low leakage current, suitable for applications as an insulator in microelectronics. The films have very uniform thickness and complete step coverage in narrow holes.
双环脒基配体与一个或多个金属原子相连,合成出化合物。这些化合物可用于合成含有金属的材料。例如纯金属、金属合金、金属氧化物、金属氮化物、金属磷化物、金属硫化物、金属硒化物、金属碲化物、金属硼化物、金属碳化物、金属硅化物和金属锗化物。材料合成技术包括气相沉积法(化学气相沉积法和原子层沉积法)、液溶法(溶胶-凝胶法和沉淀法)和固态热解法。金属铜膜是通过铜(I)双环脒蒸气和氢气的反应在加热的基底上形成的,而与水蒸气的反应则产生氧化铜。银和金薄膜是通过各自的双环脒蒸气与氢气反应沉积在表面上的。双环脒酸钴(II)蒸气、氨气和氢气的反应可在加热的基底上沉积钴金属膜,而与氨气的反应可生成氮化钴,与水蒸气的反应可生成氧化钴。钌金属膜是通过钌(II)双(双环脒)或钌(III)三(双环脒)在加热表面与或不与氢气、氨气或氧气等共反应物反应沉积而成的。合适的应用包括微电子中的电气互连和磁性信息存储设备中的抗磁层。氧化铪薄膜是通过铪(IV)四(双环脒)与水、过氧化氢或臭氧等氧源反应沉积而成的。二氧化铪薄膜具有高介电常数和低泄漏电流的特点,适合用作微电子领域的绝缘体。薄膜的厚度非常均匀,在窄孔中具有完整的阶跃覆盖。