Cleaning solution, method for cleaning semiconductor substrate using the same, and method for forming metal wiring
申请人:Haraguchi Takayuki
公开号:US20050187118A1
公开(公告)日:2005-08-25
The stripping-cleaning solution can advantageously strip a deposit generated on the top surface of a wiring without excessively etching the metal layer which constitutes the sidewall of the metal wiring pattern and the top surface of the wiring. The stripping-cleaning solution comprises at least a fluorine compound, a water-soluble organic solvent, water, and a bidentate ligand in an amount of 0.1 to 20% by mass based on the total mass of the tripping-cleaning solution. Alternatively, the stripping-cleaning solution comprises at least a basic aqueous solution, at least one selected from an organic compound having a carboxyl group and an anhydride thereof, water, and a bidentate ligand in an amount of 0.5 to 10% by mass based on the total mass of the stripping-cleaning solution.
剥离清洁溶液可以有效剥离布线顶面产生的沉积物,而不会过度蚀刻构成金属布线图案侧壁和布线顶面的金属层。剥离清洁溶液至少包括一种氟化合物、一种水溶性有机溶剂、水和一种双齿配体,其含量为绊脚石清洁溶液总质量的 0.1%至 20%。或者,剥离清洁溶液至少包括碱性水溶液、至少一种选自具有羧基及其酸酐的有机化合物、水和双叉配体,其用量为剥离清洁溶液总质量的 0.5 至 10%(按质量计)。