Copper/low-k dielectric materials have been rapidly replacing conventional aluminum-alloy/SiO2-based interconnects in today’s semiconductor devices. This paper reviews the advantages of transitioning to copper/low-k interconnects. Materials and process challenges during the fabrication of devices with copper/low-k interconnects are discussed. Reliability concerns associated with such devices are highlighted.
铜/低介电常数材料正在迅速取代当前半导体器件中传统的铝合
金/SiO2基互连。本文回顾了转向
铜/低介电常数互连的优势。讨论了在制造
铜/低介电常数互连器件过程中面临的材料和工艺挑战。突出了与此类器件相关的可靠性问题。