A coating liquid for forming a silica-containing film with a low-dielectric constant which enables formation of low-density film having a dielectric constant as low as 3 or less and having excellent resistance to oxygen plasma and process adaptation but also in the adhesion to a substrate and film strength. A substrate coated with the silica-containing film having the above characteristics, obtained by the use of the above coating liquid. The coating liquid for forming a silica-containing film with a low-dielectric constant comprises a polymer composition mainly constituted by a polysiloxane and a readily decomposable resin, said polysiloxane being a reaction product between fine particles of silica and a hydrolyzate of at least one alkoxysilane represented by the following formula (I): X
n
Si(OR)
4-n
, wherein X represents a hydrogen atom, a fluorine atom, an unfluorinated or fluorinated alkyl group of 1 to 8 carbon atoms, an aryl group or a vinyl group; R represents a hydrogen atom, an alkyl group of 1 to 8 carbon atoms, an aryl group or a vinyl group; and n is an integer of 0 to 3.
一种用于形成具有低介电常数的含
硅薄膜的涂布液,该涂布液可形成介电常数低至 3 或更低的低密度薄膜,不仅具有出色的抗氧等离子体性能和工艺适应性,还具有出色的基材附着性和薄膜强度。通过使用上述涂布液,在基底上涂布具有上述特性的含
硅薄膜。用于形成具有低介电常数的含
硅薄膜的涂覆液包括主要由聚
硅氧烷和易分解
树脂构成的聚合物组合物,所述聚
硅氧烷是细颗粒
二氧化硅和至少一种由下式(I)表示的烷氧基
硅烷的
水解物之间的反应产物:X
n
Si(OR)
4-n
其中 X 代表氢原子、
氟原子、1 至 8 个碳原子的未
氟化或
氟化烷基、芳基或
乙烯基;R 代表氢原子、1 至 8 个碳原子的烷基、芳基或
乙烯基;n 为 0 至 3 的整数。