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4-(n-pentadecyloxy)benzaldehyde | 491838-84-7

中文名称
——
中文别名
——
英文名称
4-(n-pentadecyloxy)benzaldehyde
英文别名
4-pentadecyloxybenzaldehyde;p-Pentadecanoxybenzaldehyde;4-pentadecoxybenzaldehyde
4-(n-pentadecyloxy)benzaldehyde化学式
CAS
491838-84-7
化学式
C22H36O2
mdl
——
分子量
332.527
InChiKey
UWHCPLAXNIMZLQ-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

物化性质

  • 沸点:
    448.5±18.0 °C(Predicted)
  • 密度:
    0.933±0.06 g/cm3(Predicted)

计算性质

  • 辛醇/水分配系数(LogP):
    8.7
  • 重原子数:
    24
  • 可旋转键数:
    16
  • 环数:
    1.0
  • sp3杂化的碳原子比例:
    0.68
  • 拓扑面积:
    26.3
  • 氢给体数:
    0
  • 氢受体数:
    2

上下游信息

  • 上游原料
    中文名称 英文名称 CAS号 化学式 分子量
  • 下游产品
    中文名称 英文名称 CAS号 化学式 分子量

反应信息

  • 作为反应物:
    描述:
    4-(n-pentadecyloxy)benzaldehyde盐酸羟胺sodium acetatechloroamine-T 作用下, 以 乙醇 为溶剂, 生成 4-n-pentadecyloxybenzonitrile oxide
    参考文献:
    名称:
    Umesha; Rai; Nagappa, Indian Journal of Chemistry - Section B Organic and Medicinal Chemistry, 2004, vol. 43, # 12, p. 2635 - 2640
    摘要:
    DOI:
  • 作为产物:
    描述:
    溴代十五烷对羟基苯甲醛potassium carbonate 、 potassium iodide 作用下, 以 丙酮 为溶剂, 反应 26.0h, 生成 4-(n-pentadecyloxy)benzaldehyde
    参考文献:
    名称:
    通过CH /π氢键的固态π共轭分子的人字形和螺旋自组装
    摘要:
    通过弱的非共价力(例如CH /π相互作用)以及在固态下形成大的分层超分子结构的创建,有机分子的自组织处于研究的早期阶段。本研究报告了直接证据,表明基于定制设计的低聚亚苯基亚乙烯基(OPV)的π共轭分子中CH /π相互作用驱动的分层自组装,其结构仅尾部的碳原子数不同。这些OPV合子的单晶X射线结构得以解析,并且在晶格中揭示了远距离多臂CH /π相互作用的存在。发现这些π共轭OPV的固态排列对于在晶体中产生右旋人字形堆积或在液晶中间相中产生左旋螺旋至关重要。确定了OPV发色团的螺距和侧倾角位移,以追踪分子倾角对分层结构顺序的影响。此外,在对齐的螺旋结构中对OPV进行了圆二色性研究,以证明分子自组装的存在。因此,本策略为基于弱CH /π氢键的超分子化学开辟了新方法,特别是在π共轭材料中。
    DOI:
    10.1002/chem.201200705
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文献信息

  • Conductive Liquid-Crystal Material, Process for Producing the Same, Liquid-Crystal Composition, Liquid Crystal Semiconductor Element, and Information Memory Medium
    申请人:Haramoto Yuichiro
    公开号:US20080087867A1
    公开(公告)日:2008-04-17
    The present invention provides a conductive liquid-crystal material having features including that, for example, excellent conductivity is exhibited at a low threshold voltage of about 5 V even in a room temperature range, the value of resistance varies with an applied voltage, the current density rises sharply at a voltage of about 5 V, and an excellent charge mobility is exhibited, as well as a process for producing the conductive liquid-crystal material, a liquid-crystal composition which is used for the conductive liquid-crystal material, a liquid-crystal semiconductor element, and an information recording medium. The conductive liquid-crystal material is characterized by being a liquid-crystal composition composed of at least two components having a smectic phase as a liquid-crystal phase, wherein at least one component is selected from distyryl derivatives represented by the following general formula (1) and the liquid-crystal composition comes into a solid state formed by a phase transition from the smectic phase. (In the formula, R 1 and R 2 independently represent a linear or branched alkyl group or an alkoxyl group, and R 1 and R 2 may be the same group or different groups.)
    本发明提供了一种导电液晶材料,具有以下特征:在室温范围内,即使在低阈值电压约为5V的情况下,也能表现出优异的导电性能;电阻值随着施加电压的变化而变化;在约5V的电压下,电流密度急剧上升;表现出优异的电荷迁移率。同时,本发明还提供了一种制备该导电液晶材料的方法、用于该导电液晶材料的液晶组合物、液晶半导体元件和信息记录介质。该导电液晶材料的特征在于,它是由至少两种具有液晶相中的液晶相的薄膜相的液晶组分组成的液晶组合物,其中至少一种组分选自下列通式(1)所表示的二苯乙烯衍生物,且该液晶组合物通过从薄膜相向固态相转变而形成的固态状态。 (在公式中,R1和R2分别表示线性或支链烷基或烷氧基,且R1和R2可以是相同的基团或不同的基团。)
  • MEMORY DEVICE, DATA RECORDING METHOD, AND IC TAG
    申请人:HARAMOTO Yuichiro
    公开号:US20080291346A1
    公开(公告)日:2008-11-27
    A memory device includes first electrodes, second electrodes, third electrodes, heaters, and memory cells between the first electrodes and the heaters. Each third electrode is provided on the heaters, and each second electrode is provided at a side portion of the heaters. Each memory cell contains an electroconductive liquid crystal compound having a long linear conjugate structure and exhibiting a smectic phase as a liquid crystal phase. Information can be written in the memory cells by selectively heating the heaters to cause the corresponding memory cells to have both electroconductivity and optical anisotropy.
    一种记忆设备包括第一电极、第二电极、第三电极、加热器和位于第一电极和加热器之间的存储单元。每个第三电极设置在加热器上,每个第二电极设置在加热器的侧部。每个存储单元包含一种具有长线性共轭结构并表现为液晶相的电导液晶化合物。通过有选择性地加热加热器,可以在存储单元中写入信息,从而使相应的存储单元具有电导性和光学各向异性。
  • MEMORY DEVICE, DATA RECORDING METHOD AND IC TAG
    申请人:Haramoto Yuichiro
    公开号:US20090116276A1
    公开(公告)日:2009-05-07
    A memory device of the present invention is characterized by a memory device for storing information by making use of molecular alignment of a liquid crystal compound in a liquid crystalline state formed by spot irradiation with a laser beam to carry out a selective heat treatment on an electroconductive liquid crystal semiconductor material layer containing a liquid crystal compound, comprising: a first electrode group including a plurality of linear electrodes which are parallel to each other; an electroconductive liquid crystal semiconductor material layer formed in such a manner that the layer covers the first electrode group, the layer containing a liquid crystal compound having a long linear conjugate structural moiety and exhibiting a smectic phase as a liquid crystal phase; and a second electrode group formed on the electroconductive liquid crystal semiconductor material layer and including a plurality of linear transparent electrodes being parallel to each other and extend in a direction intersecting with the first electrode group.
    本发明的一种记忆装置,其特征在于通过激光束的点状照射形成液晶态的液晶化合物的分子排列,通过对含有液晶化合物的电导性液晶半导体材料层进行选择性热处理来存储信息的记忆装置,包括:第一电极组,包括若干个相互平行的线性电极;电导性液晶半导体材料层,以覆盖第一电极组的方式形成,该层含有具有长线性共轭结构基团并呈现为液晶相的液晶化合物;第二电极组,在电导性液晶半导体材料层上形成,包括若干个相互平行且与第一电极组相交的线性透明电极。
  • Memory device, data recording method, and IC tag
    申请人:Yamanashi University
    公开号:US07742112B2
    公开(公告)日:2010-06-22
    A memory device includes first electrodes, second electrodes, third electrodes, heaters, and memory cells between the first electrodes and the heaters. Each third electrode is provided on the heaters, and each second electrode is provided at a side portion of the heaters. Each memory cell contains an electroconductive liquid crystal compound having a long linear conjugate structure and exhibiting a smectic phase as a liquid crystal phase. Information can be written in the memory cells by selectively heating the heaters to cause the corresponding memory cells to have both electroconductivity and optical anisotropy.
    一种记忆装置包括第一电极、第二电极、第三电极、加热器和位于第一电极和加热器之间的存储单元。每个第三电极设置在加热器上,每个第二电极设置在加热器的侧部。每个存储单元包含一种具有长线性共轭结构并表现为液晶相的电导液晶化合物。通过选择性加热加热器,可以在存储单元中写入信息,使相应的存储单元具有电导性和光学各向异性。
  • Memory device, data recording method and IC tag
    申请人:Yamanashi University
    公开号:US07965534B2
    公开(公告)日:2011-06-21
    A memory device of the present invention is characterized by a memory device for storing information by making use of molecular alignment of a liquid crystal compound in a liquid crystalline state formed by spot irradiation with a laser beam to carry out a selective heat treatment on an electroconductive liquid crystal semiconductor material layer containing a liquid crystal compound, comprising: a first electrode group including a plurality of linear electrodes which are parallel to each other; an electroconductive liquid crystal semiconductor material layer formed in such a manner that the layer covers the first electrode group, the layer containing a liquid crystal compound having a long linear conjugate structural moiety and exhibiting a smectic phase as a liquid crystal phase; and a second electrode group formed on the electroconductive liquid crystal semiconductor material layer and including a plurality of linear transparent electrodes being parallel to each other and extend in a direction intersecting with the first electrode group.
    本发明的一种记忆装置,其特征在于利用激光束的点状照射形成液晶相状态下液晶化合物的分子排列来存储信息的记忆装置,通过对包含液晶化合物的导电液晶半导体材料层进行选择性加热处理,包括:第一电极组,包括多个平行的线性电极;导电液晶半导体材料层,以覆盖第一电极组的方式形成,该层包含具有长线性共轭结构基团并表现为液晶相的液晶化合物;第二电极组,在导电液晶半导体材料层上形成,包括多个平行的线性透明电极,延伸于与第一电极组相交的方向。
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