Highly textured zinc oxide films were produced on basal plane sapphire substrates by chemical solution deposition. Films with oriented growth were achieved by spin coating a 0.75 M precursor solution of zinc acetate dihydrate and ethanolamine in 2-methoxyethanol, heated at 300 °C/10 min, then at 500 °C/5 h, and finally at 850 °C/12 h. Films were characterized with x-ray diffraction (XRD) and scanning and transmission electron microscopy. The films exhibited only the (0002) ZnO line in XRD diagrams, proving a very well-developed out-of-plane texture. At temperatures above 700 °C the ZnAl2O4 spinel was observed, which formed as a reaction layer between sapphire and ZnO. Few specimens produced both in-plane and out-of-plane oriented growth of ZnO on basal plane sapphire. It was hypothesized that the substrate miscut, uncontrolled for the current experiments, could be the cause of the infrequent growth of epitaxial films.
通过化学溶液沉积法在基底面蓝宝石衬底上制备了高纹理氧化锌薄膜。在 2-甲氧基乙醇中旋涂 0.75 M 的二水醋酸锌和乙醇胺前驱体溶液,然后在 300 °C/10 分钟、500 °C/5 小时和 850 °C/12 小时的条件下加热,从而获得了定向生长的薄膜。在 X 射线衍射图中,薄膜只显示出 (0002) 氧化锌线,证明了非常发达的面外纹理。在 700 °C 以上的温度下,可以观察到 ZnAl2O4 尖晶石,它是在蓝宝石和氧化锌之间形成的反应层。极少数试样在基底面蓝宝石上同时产生了面内和面外定向生长的氧化锌。据推测,在当前实验中无法控制的基底误切可能是导致外延薄膜生长不频繁的原因。