5-Fluoro-2-hydroxy-3-(hydroxymethyl)benzaldehyde | 872725-47-8

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: 5-Fluoro-2-hydroxy-3-(hydroxymethyl)benzaldehyde
• 英文别名: 5-fluoro-2-hydroxy-3-(hydroxymethyl)benzaldehyde
• CAS: 872725-47-8
• 化学式: C₈H₇FO₃
• 分子量: 170.14
• InChiKey: NGVGIIDXNRIPDD-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  0.6
• 重原子数：
  12
• 可旋转键数：
  2
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.12
• 拓扑面积：
  57.5
• 氢给体数：
  2
• 氢受体数：
  4

文献信息

• RESIST UNDERLAYER FILM-FORMING COMPOSITION CONTAINING NOVOLAC POLYMER HAVING SECONDARY AMINO GROUP
  申请人：NISSAN CHEMICAL INDUSTRIES, LTD.

  公开号：US20160326396A1

  公开（公告）日：2016-11-10

  A resist underlayer film which has an excellent hard mask function and can form an excellent pattern shape. A resist underlayer film-forming composition to be used for a lithography process, including a novolac polymer obtained by reaction of an aldehyde compound and an aromatic compound having a secondary amino group. The novolac polymer contains a unit structure of Formula (1): A method for producing a semiconductor device, including the steps of: forming a resist underlayer film from the resist underlayer film-forming composition on a semiconductor substrate; forming a hard mask on the resist underlayer film; further forming a resist film on the hard mask; forming a resist pattern by irradiation with light or an electron beam and development; etching the hard mask by using the formed resist pattern; etching the resist underlayer film by using the patterned hard mask; and processing the semiconductor substrate by using the patterned underlayer film.