4-Acetyl-3-hydroxyphenyl 2-methylprop-2-enoate | 13987-67-2

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: 4-Acetyl-3-hydroxyphenyl 2-methylprop-2-enoate
• 英文别名: (4-acetyl-3-hydroxyphenyl) 2-methylprop-2-enoate
• CAS: 13987-67-2
• 化学式: C₁₂H₁₂O₄
• 分子量: 220.22
• InChiKey: LOOZRGZXUIUMRW-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.7
• 重原子数：
  16
• 可旋转键数：
  4
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.17
• 拓扑面积：
  63.6
• 氢给体数：
  1
• 氢受体数：
  4

文献信息

• Positive resist composition and pattern forming process
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US10012902B2

  公开（公告）日：2018-07-03

  A non-chemically-amplified positive resist composition comprising a polymer comprising both recurring units derived from a sulfonium salt capable of generating a fluorinated acid and recurring units containing an amino group as a base resin exhibits a high resolution and a low edge roughness and forms a pattern of good profile after exposure and organic solvent development.

  一种非化学扩增的正抗蚀剂组合物，由一种聚合物组成，这种聚合物既包括从能生成氟化酸的锍盐中提取的递归单元，也包括作为基体树脂的含有氨基的递归单元，在曝光和有机溶剂显影后，该组合物具有高分辨率和低边缘粗糙度，并能形成轮廓良好的图案。
• RESIST COMPOSITION, PATTERNING PROCESS AND POLYMER
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20140178820A1

  公开（公告）日：2014-06-26

  An additive polymer comprising recurring styrene units having an ester group bonded to a CF 3 —C(OR 2 )—R 3 group (wherein R 2 is H, acyl or acid labile group, R 3 is H, CH 3 or CF 3 ) such as 1,1,1,3,3,3-hexafluoro-2-propanol is added to a polymer capable of increasing alkali solubility under the action of acid to formulate a resist composition. The resist composition can minimize outgassing from a resist film during the EUV lithography and form a resist film having a hydrophilic surface sufficient to prevent formation of blob defects on the film after development.
• DEVELOPER AND PATTERNING PROCESS USING THE SAME
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20160195813A1

  公开（公告）日：2016-07-07

  The present invention provides a developer for a photosensitive resist composition, comprising a compound represented by the general formula (1) wherein R 1 to R 6 represent a linear, branched, or cyclic alkyl group having 1 to 4 carbon atoms; and X represents a linear or branched alkylene group having 6 to 16 carbon atoms and optionally having an ester group. There can be provided a developer that can prevent the occurrence of pattern collapse and connection between patterns, i.e. bridge defect after development and can provide a resist pattern with small edge roughness.
• POLYMER, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20160370702A1

  公开（公告）日：2016-12-22

  A positive resist composition comprising a polymer comprising recurring units having both an acyl or alkoxycarbonyl group and an acid labile group-substituted hydroxyl group exhibits a high contrast of alkaline dissolution rate before and after exposure, a high resolution, a good pattern profile and minimal edge roughness.
• POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20170242339A1

  公开（公告）日：2017-08-24

  A non-chemically-amplified positive resist composition comprising a polymer comprising both recurring units derived from a sulfonium salt capable of generating a fluorinated acid and recurring units containing an amino group as a base resin exhibits a high resolution and a low edge roughness and forms a pattern of good profile after exposure and organic solvent development.