imidazolium acetate | 70615-26-8

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 唑类
• 英文名称: imidazolium acetate
• 英文别名: Imidazolylessigsaeure；imidazole acetic acid；imidazole acetate；1H-imidazol-3-ium;acetate
• CAS: 70615-26-8
• 化学式: C₂H₄O₂*C₃H₄N₂
• 分子量: 128.131
• InChiKey: OFGDSGVGRWPQJQ-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -1.41
• 重原子数：
  9
• 可旋转键数：
  0
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.2
• 拓扑面积：
  70.1
• 氢给体数：
  2
• 氢受体数：
  2

反应信息

• 作为产物：
  描述：

  1,3-Bis[[p-(dimethylamino)benzylidene]amino]-2-[2-(dimethylamino)vinyl]imidazolium hydrogen carbonate 在 乙醚 、 methanol diethyl ether 、 1,3-bis[[p-(dimethylamino)benzylidene]amino]-2-[2-dimethylamino)vinyl 作用下， 以 甲醇 、 溶剂黄146 为溶剂， 反应 0.33h， 以There is obtained 1,3-bis[[p-(dimethylamino)benzylidene]amino]-2-[2-dimethylamino)vinyl]imidazolium acetate of melting point 182° (dec.)的产率得到imidazolium acetate
  参考文献：
  名称：

  Imidazolium hydrogen carbonates

  摘要：

  公式I中的咪唑氢碳酸盐对应的药物可接受盐，其中符号Q为芳基或杂芳基，基团--NR.sup.1 R.sup.2为碱性氨基基团，R.sup.3为氢、低烷基、低羟基烷基、低烷氧基烷基、低卤代烷基、低烷硫基、低烷氧基或--(A).sub.n --Ra基团，R.sup.4为饱和或部分不饱和的低碳氢基团、碱性氨基基团或--N.dbd.CRc--Rb、--CHRcRd、--NH--CHRcRd、--NH--CO--Re或--CHRc--CO--Re基团，R.sup.5为氢、低烷基、低羟基烷基、低烷氧基烷基、低卤代烷基、芳基或融合苯环，R.sup.6为氢或低烷基，Ra和Rb各为芳基、杂芳基或碱性氨基基团，Rc为氢或低烷基，Rd为芳基或杂芳基，Re为氢、通过氧原子或低烷基团或芳基、杂芳基或碱性氨基基团可选地连接的饱和或部分不饱和的低碳氢基团，A为乙烯基或低碳烷基，n为整数0或1，虚线为额外的双键，具有有价值的抗菌、抗真菌、原虫杀虫和/或驱虫性能。公式I中的咪唑氢碳酸盐可用于以简单和廉价的方式制备这种药学上可接受的，特别是水溶性的盐。

  公开号：

  US04808727A1

文献信息

• Novel room temperature ionic liquids and low melting mixtures based on imidazolium: Cheap ionic solvents for chemical and biological applications
  作者：Meysam Aryafard、Babak Minofar、Eva Cséfalvay、Lenka Malinová、David Řeha

  DOI：10.1016/j.molliq.2021.117877

  日期：2021.12

  analyze the structures of solvents. Melting points, and thermal stabilities were measured via thermal analyses. We were looking to synthesize new DESs with imidazolium chloride (ImCl); Due to lack of observation the melting points for mixtures of ImCl + hydrogen bond donors (HBDs), these mixtures were called low melting mixtures (LMMs) in this work. The mixtures of PILs/LMMs with molecular solvents

  基于绿色成分、廉价来源、高纯度和易于制备的新型质子离子液体 (PIL) 和低熔点混合物 (LMM) 已被合成。PIL 包括 [Im][For]、[Im][Ace]、[Im][Pro]、[Im][But] 和 [Im][Pen]。LMM 包括 [ImCl][EG]、[ImCl][Gly]、[ImCl][PEG]、[ImCl][ETA] 和 [ImCl][碳水化合物] + DMSO。这些溶剂包含咪唑鎓/咪唑鎓氯化物作为阳离子/盐。NMR光谱用于分析溶剂的结构。通过热分析测量熔点和热稳定性。我们希望用氯化咪唑鎓 (ImCl) 合成新的 DES；由于缺乏对 ImCl + 氢键供体 (HBD) 混合物的熔点的观察，这些混合物在这项工作中被称为低熔点混合物 (LMM)。PILs/LMMs 与分子溶剂的混合物对可用于分离目标的同质和异质系统显示出良好的影响。碳水化合物和一些氨基酸的溶解度在纯离子液体和分子液体的混合中进行了测试。将
• 1,3-disubstituted/imidazolium salts
  申请人：Hoffmann-La Roche Inc.

  公开号：US04956470A1

  公开（公告）日：1990-09-11

  The imidazolium compounds of the formula ##STR1## wherein Q is arylene or heteroarylene, the group --NR.sup.1 R.sup.2 is a basic amino group, R.sup.3 is lower alkylthio, lower alkoxy or the group --(A).sub.n --Ra, R.sup.4 is a saturated or partially unsaturated lower hydrocarbon group, a basic amino group, --N.dbd.CRc--Rb, --CHRcRd, --NH--CHRcRd, --NH--CO--Re or --CHRc--CO--Re, R.sup.5 is hydrogen, lower alkyl, lower hydroxyalkyl, lower alkoxyalkyl, lower haloalkyl, aryl or a fused benzene ring, R.sup.6 is hydrogen or lower alkyl, Ra and Rb independently are aryl, heteroaryl or a basic amino group, Rc is hydrogen or lower alkyl, Rd is aryl or heteroaryl, Re is hydrogen, a saturated or partially unsaturated lower hydrocarbon group optionally attached via an oxygen atom, or an aryl, heteroaryl or basic amino group optionally attached via a lower alkyl group, A is vinylene or lower alkylene, n is the integer 0 or 1, the dotted line is an additional double bond and the symbol Y.sup.- is a pharmaceutically acceptable anion, and their pharmaceutically acceptable acid addition salts, which possess valuable pharmacological properties are described. In particular, they possess antibacterial, antimycotic, protozoacidal and/or anthelmintic properties and are especially active against parasitic protozoa and worms. The compounds of formula I can be prepared according to known methods.

  本文描述了式为##STR1##的咪唑化合物，其中Q为芳基或杂芳基，--NR.sup.1 R.sup.2为碱性氨基，R.sup.3为较低的烷基硫醚，较低的烷氧基或--(A).sub.n --Ra，R.sup.4为饱和或部分不饱和的较低碳氢基团，碱性氨基，--N.dbd.CRc--Rb，--CHRcRd，--NH--CHRcRd，--NH--CO--Re或--CHRc--CO--Re，R.sup.5为氢，较低的烷基，较低的羟基烷基，较低的烷氧基烷基，较低的卤代烷基，芳基或融合苯环，R.sup.6为氢或较低的烷基，Ra和Rb分别为芳基，杂芳基或碱性氨基，Rc为氢或较低的烷基，Rd为芳基或杂芳基，Re为氢，饱和或部分不饱和的较低碳氢基团，可选通过氧原子连接，或芳基，杂芳基或碱性氨基可选通过较低的烷基连接，A为乙烯基或较低的烷基烯，n为整数0或1，点线为额外的双键，符号Y.sup.-为药学上可接受的阴离子，以及它们的药学上可接受的酸加盐，具有有价值的药理学特性。特别是，它们具有抗菌，抗真菌，抗原虫和/或驱虫特性，特别是对寄生原虫和蠕虫特别活跃。式I的化合物可以按照已知方法制备。
• Antimicrobial 1,3-disubstituted/imidazolium salts
  申请人：Hoffman-La Roche Inc.

  公开号：US04814332A1

  公开（公告）日：1989-03-21

  The imidazolium compounds of the formula ##STR1## wherein the various substituents are defined hereinbelow and their pharmaceutically acceptable acid addition salts, which possess valuable pharmacological properties are described. In particular, they possess antibacterial, antimycotic, protozoacidal and/or anthelmintic properties and are especially active against parasitic protozoa and worms. The compounds of formula I can be prepared according to known methods.

  本文介绍了公式## STR1 ##中各种取代基定义如下的咪唑化合物及其药学上可接受的酸加成盐，具有有价值的药理学特性。特别地，它们具有抗菌，抗真菌，原虫杀灭和/或驱虫特性，并且对寄生原虫和蠕虫特别活跃。公式I的化合物可以按照已知方法制备。
• RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICONE HAVING ONIUM GROUP
  申请人：Shibayama Wataru

  公开号：US20110143149A1

  公开（公告）日：2011-06-16

  There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hard mask or a bottom anti-reflective coating, or a resist underlayer film causing no intermixing with a resist and having a dry etching rate higher than that of the resist. A film forming composition comprising a silane compound having an onium group, wherein the silane compound having an onium group is a hydrolyzable organosilane having, in a molecule thereof, an onium group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The composition uses as a resist underlayer film forming composition for lithography. A composition comprising a silane compound having an onium group, and a silane compound having no onium group, wherein the silane compound having an onium group exists in the whole silane compound at a ratio of less than 1% by mol, for example 0.01 to 0.95% by mol. The hydrolyzable organosilane may be a compound of Formula: R 1 a R 2 b Si(R 3 ) 4-(a+b) . A resist underlayer film obtained by applying the composition as claimed in any one of claims 1 to 14 onto a semiconductor substrate and by baking the composition.

  提供了一种用于光刻的抗阻底层膜成分，用于形成可用作硬掩模或底部防反射涂层的抗阻底层膜，或者是不与抗阻混合并具有比抗阻更高的干法蚀刻速率的抗阻底层膜。该膜形成成分包括具有onium基团的硅烷化合物，其中具有onium基团的硅烷化合物是具有水解性的有机硅烷，其分子中具有onium基团、其水解产物或其水解缩合产物。该成分用作光刻的抗阻底层膜形成成分。一种成分包括具有onium基团的硅烷化合物和不具有onium基团的硅烷化合物，其中具有onium基团的硅烷化合物在整个硅烷化合物中的比例小于1摩尔％，例如为0.01至0.95摩尔％。该水解性有机硅烷可以是式：R1aR2bSi（R3）4-（a + b）的化合物。通过将所述任一权利要求1至14中的任一成分应用于半导体基板并烘烤所述成分，可以获得抗阻底层膜。
• Resist underlayer film forming composition containing silicone having onium group
  申请人：Shibayama Wataru

  公开号：US08864894B2

  公开（公告）日：2014-10-21

  There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hard mask or a bottom anti-reflective coating, or a resist underlayer film causing no intermixing with a resist and having a dry etching rate higher than that of the resist. A film forming composition comprising a silane compound having an onium group, wherein the silane compound having an onium group is a hydrolyzable organosilane having, in a molecule thereof, an onium group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The composition uses as a resist underlayer film forming composition for lithography. A composition comprising a silane compound having an onium group, and a silane compound having no onium group, wherein the silane compound having an onium group exists in the whole silane compound at a ratio of less than 1% by mol, for example 0.01 to 0.95% by mol. The hydrolyzable organosilane may be a compound of Formula: R1aR2bSi(R3)4−(a+b). A resist underlayer film obtained by applying the composition as claimed in any one of claims 1 to 14 onto a semiconductor substrate and by baking the composition.

  提供一种用于光刻的抗蚀底层膜形成组合物，用于形成可用作硬掩膜或底部抗反射涂层的抗蚀底层膜，或者不与光刻胶混合且具有比光刻胶更高的干法刻蚀速率的抗蚀底层膜。该组合物包括具有onium基团的硅烷化合物，其中具有onium基团的硅烷化合物是一种可水解的有机硅烷，在其分子中具有onium基团、其水解产物或其水解缩合产物。该组合物用作光刻的抗蚀底层膜形成组合物。该组合物包括具有onium基团的硅烷化合物和不具有onium基团的硅烷化合物，其中具有onium基团的硅烷化合物在整个硅烷化合物中的比例小于1%摩尔，例如0.01至0.95%摩尔。可水解的有机硅烷可以是公式的化合物：R1aR2bSi（R3）4-（a+b）。通过将所述组合物按权利要求1至14中的任一项涂覆到半导体基片上并烘烤所得到的抗蚀底层膜。