(1-Methoxycyclopentyl)methanol | 1355355-84-8

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: (1-Methoxycyclopentyl)methanol
• CAS: 1355355-84-8
• 化学式: C₇H₁₄O₂
• mdl: MFCD28064208
• 分子量: 130.18
• InChiKey: CSAKQFWACRXURU-UHFFFAOYSA-N

物化性质

• 沸点：
  192.0±8.0 °C(Predicted)
• 密度：
  1.00±0.1 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  0.5
• 重原子数：
  9
• 可旋转键数：
  2
• 环数：
  1.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  29.5
• 氢给体数：
  1
• 氢受体数：
  2

文献信息

• PYRAZOLE COMPOUND
  申请人：Sasaki Izumi

  公开号：US20130116296A1

  公开（公告）日：2013-05-09

  The present invention relates to a novel serotonin reuptake inhibitor which also exhibits 5-HT 2C antagonistic action (antidepressive and anxiolytic effects), in particular, 5-HT 2C inverse agonistic action comprising Compound (1): or a pharmaceutically acceptable salt thereof wherein R 1 , R 2 , R 3 and R 4 are independently hydrogen or C 1-6 alkyl etc.; R 5 is C 4-7 alkyl or —(CR 8 R 9 ) r -E; R 6 , R 7 , R 8 and R 9 are independently hydrogen, fluorine or C 1-6 alkyl; A is C 6-10 aryl or heteroaryl etc.; r is 1, 2, 3 or 4; E is C 3-8 cycloalkyl or C 6-10 aryl etc.; L is oxygen, sulfur or —NR 10 —; n is 1, 2 or 3; R 10 is hydrogen or C 1-6 alkyl etc.; and X is hydrogen or halogen etc.

  本发明涉及一种新型的血清素再摄取抑制剂，同时还表现出5-HT2C拮抗作用（抗抑郁和抗焦虑效果），特别是包括化合物（1）的5-HT2C逆作动作：或其药学上可接受的盐，其中R1、R2、R3和R4独立地为氢或C1-6烷基等；R5为C4-7烷基或—(CR8R9)r-E；R6、R7、R8和R9独立地为氢、氟或C1-6烷基；A为C6-10芳基或杂环芳基等；r为1、2、3或4；E为C3-8环烷基或C6-10芳基等；L为氧、硫或—NR10—；n为1、2或3；R10为氢或C1-6烷基等；X为氢或卤素等。
• THERMOSETTING IODINE- AND SILICON-CONTAINING MATERIAL, COMPOSITION CONTAINING THE MATERIAL FOR FORMING RESIST UNDERLAYER FILM FOR EUV LITHOGRAPHY, AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP3657254A1

  公开（公告）日：2020-05-27

  The present invention is a thermosetting silicon-containing material containing one or more of a repeating unit shown by the following general formula (Sx-1), a repeating unit shown by the following general formula (Sx-2), and a partial structure shown by the following general formula (Sx-3): where R1 represents an iodine-containing organic group; and R2 and R3 are each independently identical to R1, a hydrogen atom, or a monovalent organic group having 1 to 30 carbon atoms. This provides: a thermosetting silicon-containing material used for forming a resist underlayer film which is capable of contributing to sensitivity enhancement of an upper layer resist while keeping LWR thereof from degrading; a composition for forming a silicon-containing resist underlayer film, the composition containing the thermosetting silicon-containing material; and a patterning process using the composition.

  本发明是一种热固性含硅材料，它含有一个或多个如下通式（Sx-1）所示的重复单元、如下通式（Sx-2）所示的重复单元和如下通式（Sx-3）所示的部分结构： 其中 R1 代表含碘有机基团；R2 和 R3 各自独立地与 R1、氢原子或具有 1 至 30 个碳原子的一价有机基团相同。本发明提供了：一种用于形成抗蚀剂底层薄膜的含硅热固性材料，该材料能够有助于提高上层抗蚀剂的灵敏度，同时使其低功耗不降低；一种用于形成含硅抗蚀剂底层薄膜的组合物，该组合物含有该含硅热固性材料；以及一种使用该组合物的图案化工艺。
• THERMOSETTING SILICON-CONTAINING COMPOUND, COMPOSITION FOR FORMING A SILICON-CONTAINING FILM, AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP3680275A1

  公开（公告）日：2020-07-15

  A thermosetting silicon-containing compound contains one or more of structural units shown by the following general formulae (Sx-1), (Sx-2), and (Sx-3): where R1 represents a monovalent organic group containing both a phenyl group optionally having a substituent and a non-aromatic ring having 3 to 10 carbon atoms; and R2, R3 each represent the R1 or a monovalent organic group having 1 to 30 carbon atoms. Thus, the present invention provides a thermosetting silicon-containing compound usable in a silicon-containing resist underlayer film material capable of achieving contradictory properties of having both alkaline developer resistance and improved solubility in an alkaline stripping liquid containing no hydrogen peroxide.

  热固性含硅化合物包含一个或多个结构单元，结构单元的通式如下（Sx-1）、（Sx-2）和（Sx-3）： 其中，R1 代表一个一价有机基团，该基团包含一个可选具有取代基的苯基和一个具有 3 至 10 个碳原子的非芳香环；R2、R3 分别代表 R1 或一个具有 1 至 30 个碳原子的一价有机基团。因此，本发明提供了一种可用于含硅抗蚀剂底层薄膜材料的热固性含硅化合物，该化合物能够实现既具有抗碱性显影剂性能又能在不含过氧化氢的碱性剥离液中提高溶解性的矛盾特性。
• COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP3686256A1

  公开（公告）日：2020-07-29

  A composition for forming a silicon-containing resist underlayer film contains at least: one or more compounds shown by the following general formula (P-0); and a thermally crosslinkable polysiloxane (Sx), where R100 represents a divalent organic group substituted with one or more fluorine atoms; R101 and R102 each independently represent a linear, branched, or cyclic monovalent hydrocarbon group having 1 to 20 carbon atoms optionally substituted with a hetero-atom or optionally interposed by a hetero-atom; R103 represents a linear, branched, or cyclic divalent hydrocarbon group having 1 to 20 carbon atoms optionally substituted with a hetero-atom or optionally interposed by a hetero-atom; R101 and R102, or R101 and R103, are optionally bonded to each other to form a ring with a sulfur atom in the formula; and L104 represents a single bond or a linear, branched, or cyclic divalent hydrocarbon group having 1 to 20 carbon atoms optionally substituted with a hetero-atom or optionally interposed by a hetero-atom. Thus, the present invention provides a resist underlayer film capable of improving LWR and CDU in a fine pattern formed in a chemically amplified resist that uses an acid as a catalyst.

  一种用于形成含硅抗蚀剂底层薄膜的组合物至少包含：一种或多种如下通式所示的化合物（P-0）；以及一种可热交联的聚硅氧烷（Sx）、 其中 R100 代表被一个或多个氟原子取代的二价有机基团；R101 和 R102 各自独立地代表具有 1 至 20 个碳原子的线性、支链或环状一价烃基团，可选择被一个杂原子取代或被一个杂原子插入；R103 代表具有 1 至 20 个碳原子的线性、支链或环状二价烃基团，可选择被一个杂原子取代或被一个杂原子插入；R101 和 R102，或 R101 和 R103，可选地相互键合，以形成式中带有硫原子的环；以及 L104 代表单键或具有 1 至 20 个碳原子的线性、支链或环状二价烃基，可选地被杂原子取代或可选地被杂原子夹杂。因此，本发明提供了一种抗蚀剂底层薄膜，能够改善在使用酸作为催化剂的化学放大抗蚀剂中形成的精细图案的 LWR 和 CDU。
• COMPOSITION FOR FORMING SILICON-CONTAINING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND SILICON COMPOUND
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP4020081A1

  公开（公告）日：2022-06-29

  The present invention is a composition for forming a silicon-containing resist underlayer film, containing one or both of a hydrolysis product and a hydrolysis condensate of one or more silicon compounds (A-1) shown by the following general formula (1). This provides: a composition for forming a silicon-containing resist underlayer film with which it is possible to form a resist underlayer film having favorable adhesiveness to resist patterns regardless of whether in negative development or positive development, and also having favorable adhesiveness to finer patterns as in EUV photo-exposure; a patterning process; and a silicon compound.

  本发明是一种用于形成含硅光刻胶底层膜的组合物，其中含有一种或多种硅化合物（A-1）的水解产物和水解缩合物中的一种或两种，如下通式（1）所示。这就提供了：一种用于形成含硅抗蚀剂底层膜的组合物，使用该组合物可以形成抗蚀剂底层膜，无论在负显影还是正显影中，该抗蚀剂底层膜都对抗蚀剂图案具有良好的附着性，而且在超紫外光曝光中，该抗蚀剂底层膜还对更精细的图案具有良好的附着性；一种图案化工艺；以及一种硅化合物。