ORGANOMETALLIC PRECURSORS AND METHODS OF FORMING THIN FILMS INCLUDING THE USE OF THE SAME
申请人:Cho Kyu-Ho
公开号:US20070031597A1
公开(公告)日:2007-02-08
The present invention provides organometallic precursors and methods of forming thin films including using the same. The organometallic precursors include a metal and a ligand linked to the metal. The ligand can be represented by the following formula (1):
wherein R
1
and R
2
are each independently hydrogen or an alkyl group. The thin films may be applied to semiconductor structures such as a gate insulation layer of a gate structure and a dielectric layer of a capacitor.