The design and development of novel ambipolar semiconductors is very crucial to advance various optoelectronic technologies including organic complementary (CMOS) integrated circuits. Although numerous high-performance ambipolar polymers have been realized to date, small molecules have been unable to provide high ambipolar performance in combination with ambient-stability and solution-processibility
新型双极性半导体的设计和开发对于推进包括有机互补(CMOS)集成电路在内的各种光电技术至关重要。尽管迄今为止已经实现了许多高性能的双极性聚合物,但是小分子不能与环境稳定性和溶液可加工性相结合地提供高的双极性性能。在这项研究中,通过在D–A– Dπ结构中实现具有
联苯噻吩供体单元的高度π电子缺陷的阶梯型IFDK / IFDM受体核,得到了两个新颖的小分子2OD-
TTIFDK和2OD-
TTIFDM为了实现超低带隙(1.21–1.65 eV)半导体以及具有足够平衡的分子能,以实现双极性,设计,合成和表征了。发现新半导体的HOMO / LUMO能量分别为-5.47 / -3.61和-5.49 / -4.23 eV。通过2OD-
TTIFDM的溶液剪切法制造的底栅/顶接触式OFET可产生环境稳定的双极性器件,其电子迁移率和空穴迁移率分别为0.13 cm 2 V -1 s -1和0.01 cm 2 V -1