4-oxo-2-adamantyloxymethyl methacrylate | 881384-83-4

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: 4-oxo-2-adamantyloxymethyl methacrylate
• 英文别名: (4-Oxo-2-adamantyl)oxymethyl 2-methylprop-2-enoate
• CAS: 881384-83-4
• 化学式: C₁₅H₂₀O₄
• 分子量: 264.321
• InChiKey: DLVATUUAKOHNBO-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.1
• 重原子数：
  19
• 可旋转键数：
  5
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.73
• 拓扑面积：
  52.6
• 氢给体数：
  0
• 氢受体数：
  4

文献信息

• Polymer Compound, Photoresist Composition Including the Polymer Compound, and Resist Pattern Formation Method
  申请人：Ogata Toshiyuki

  公开号：US20080166655A1

  公开（公告）日：2008-07-10

  The present invention provides a polymer compound which can constitute a photoresist composition which is capable of having an excellent resolution, forming a fine pattern with a good rectangularity, obtaining favorable resist characteristics even when acid strength of a acid generated from an acid generator is weak, and having favorable sensitivity; a photoresist composition including the polymer compound; and a resist pattern formation method using the photoresist composition. The photoresist composition and the resist pattern formation method use the polymer compound including an alkali soluble group (i), wherein the alkali soluble group (i) is at least one substituent group selected from an alcoholic hydroxyl group, a carboxyl group, or a phenolic hydroxyl group, and the substituent group is protected by an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1): —CH 2 —OCH 2  n R 1 (1) (wherein R 1 represents a cycloaliphatic group which contains no more than 20 carbon atoms and may contain an oxygen atom, a nitrogen atom, a sulfur atom, or a halogen atom, and n represents 0 or an integer of 1 to 5.).

  本发明提供了一种聚合物化合物，该化合物可以构成一种光刻胶组合物，该组合物能够具有优异的分辨率，形成具有良好矩形度的精细图案，即使从酸发生器生成的酸的强度较弱，也能获得良好的抗性特性，并具有良好的灵敏度；包括该聚合物化合物的光刻胶组合物；以及使用该光刻胶组合物的抗性图案形成方法。该光刻胶组合物和抗性图案形成方法使用包括碱溶性基团（i）的聚合物化合物，其中碱溶性基团（i）是从醇羟基、羧基或酚羟基中至少选择一个取代基团，并且该取代基团由一种酸解离、抑制溶解的基团（ii）保护，该基团由通式（1）表示：—CH2—O nR1（1）（其中R1表示不含有超过20个碳原子的环烷基团，可能含有氧原子、氮原子、硫原子或卤素原子，n表示0或1到5的整数）。
• POLYMER COMPOUND, PHOTORESIST COMPOSITION CONTAINING SUCH POLYMER COMPOUND, AND METHOD FOR FORMING RESIST PATTERN
  申请人：TOKYO OHKA KOGYO CO., LTD.

  公开号：EP1717261A1

  公开（公告）日：2006-11-02

  The present invention provides a polymer compound which can constitute a photoresist composition which is capable of having an excellent resolution, forming a fine pattern with a good rectangularity, obtaining favorable resist characteristics even when acid strength of a acid generated from an acid generator is weak, and having favorable sensitivity; a photoresist composition including the polymer compound; and a resist pattern formation method using the photoresist composition. The photoresist composition and the resist pattern formation method use the polymer compound including an alkali soluble group (i), wherein the alkali soluble group (i) is at least one substituent group selected from an alcoholic hydroxyl group, a carboxyl group, or a phenolic hydroxyl group, and the substituent group is protected by an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1): (wherein R1 represents a cycloaliphatic group which contains no more than 20 carbon atoms and may contain an oxygen atom, a nitrogen atom, a sulfur atom, or a halogen atom, and n represents 0 or an integer of 1 to 5.).

  本发明提供了一种聚合物化合物，它可以构成一种光刻胶组合物，该组合物能够具有极佳的分辨率，形成具有良好矩形度的精细图案，即使在酸发生器产生的酸的酸强度较弱时也能获得良好的抗蚀特性，并且具有良好的灵敏度；一种包括该聚合物化合物的光刻胶组合物；以及一种使用该光刻胶组合物的抗蚀图案形成方法。光刻胶组合物和抗蚀剂图案形成方法使用包括碱溶性基团(i)的聚合物化合物，其中碱溶性基团(i)是至少一个选自醇羟基、羧基或酚羟基的取代基，取代基被通式(1)表示的可酸解、溶解抑制基团(ii)保护： (其中 R1 代表含不超过 20 个碳原子的环脂族基团，可包含氧原子、氮原子、硫原子或卤素原子，n 代表 0 或 1 至 5 的整数）。
• Polymer compound, photoresist composition containing such polymer compound, and method for forming resist pattern
  申请人：Tokyo Ohka Kogyo Co., Ltd.

  公开号：EP2433972A1

  公开（公告）日：2012-03-28

  The present invention provides a polymer compound which can constitute a photoresist composition which is capable of having an excellent resolution, forming a fine pattern with a good rectangularity, obtaining favorable resist characteristics even when acid strength of a acid generated from an acid generator is weak, and having favorable sensitivity; a photoresist composition including the polymer compound; and a resist pattern formation method using the photoresist composition. The photoresist composition and the resist pattern formation method use the polymer compound including an alkali soluble group (i), wherein the alkali soluble group (i) is at least one substituent group selected from an alcoholic hydroxyl group, a carboxyl group, or a phenolic hydroxyl group, and the substituent group is protected by an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1): (wherein R1 represents a cycloaliphatic group which contains no more than 20 carbon atoms and may contain an oxygen atom, a nitrogen atom, a sulfur atom, or a halogen atom, and n represents 0 or an integer of 1 to 5.).

  本发明提供了一种聚合物化合物，它可以构成一种光刻胶组合物，该组合物能够具有极佳的分辨率，形成具有良好矩形度的精细图案，即使在酸发生器产生的酸的酸强度较弱时也能获得良好的抗蚀特性，并且具有良好的灵敏度；一种包括该聚合物化合物的光刻胶组合物；以及一种使用该光刻胶组合物的抗蚀图案形成方法。光刻胶组合物和抗蚀剂图案形成方法使用包括碱溶性基团(i)的聚合物化合物，其中碱溶性基团(i)是至少一个选自醇羟基、羧基或酚羟基的取代基，取代基被通式(1)表示的可酸解、溶解抑制基团(ii)保护： (其中 R1 代表含不超过 20 个碳原子的环脂族基团，可包含氧原子、氮原子、硫原子或卤素原子，n 代表 0 或 1 至 5 的整数）。
• Polymer Compound, Positive Resist Composition and Process for Forming Resist Pattern
  申请人：Kinoshita Yohei

  公开号：US20080096126A1

  公开（公告）日：2008-04-24

  The positive resist composition of the present invention is a polymer compound comprising at least one constituent unit (a1) selected from the group consisting of constituent units represented by the following general formulas (1) and (1)′, a constituent unit (a2) derived from an (α-lower alkyl)acrylate ester having a lactone-containing monocycle or a polycyclic group, and a constituent unit (a3) which is a constituent unit other than the constituent unit (a1) and the constituent unit (a2) and is derived from an (α-lower alkyl)acrylate ester which has an aliphatic cyclic group-containing non-acid dissociable dissolution inhibiting group and does not have a polar group: wherein R represents a hydrogen atom, a fluorine atom, a lower alkyl group having 20 or less carbon atoms, or a fluorinated lower alkyl group having 20 or less carbon atoms, R 1 represents at most 20-membered cyclic group which may have a substituent, n represents 0 or an integer of 1 to 5, and m represents 0 or 1.
• METHOD OF FORMING POLYMERIC COMPOUND, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN
  申请人：Tokyo Ohka Kogyo Co., Ltd.

  公开号：US20130137049A1

  公开（公告）日：2013-05-30

  A method of producing a polymeric compound, including: copolymerizing a monomer containing an —SO 2 — containing cyclic group with a monomer containing an acid decomposable group which exhibits increased polarity by the action of acid, thereby obtaining the polymeric compound, provided that the polymeric compound comprises no structural unit derived from a monomer that generates acid upon exposure, wherein the copolymerizing is conducted in the presence of 0.001 to 1.0 mol % of a basic compound, based on the monomer containing an —SO 2 — containing cyclic group.