申请人:FUJIFILM Corporation
公开号:EP1837903A2
公开(公告)日:2007-09-26
The metal polishing slurry according to the present invention for use in chemical mechanical polishing during semiconductor device fabrication contains at least one compound of formula (A) below and at least one compound of formula (B) or formula (C) below:
[wherein R1, R2, R3, R4 and R5 are each independently hydrogen, methyl, ethyl, phenyl, amino, sulfo, carboxy, aminomethyl, carboxymethyl, sulfomethyl, o-aminophenyl, m-aminophenyl, p-aminophenyl, o-carboxyphenyl, m-carboxyphenyl, p-carboxyphenyl, o-sulfophenyl, m-sulfophenyl or p-sulfophenyl].
根据本发明,在半导体器件制造过程中用于化学机械抛光的金属抛光浆料含有至少一种下式(A)化合物和至少一种下式(B)或(C)化合物:
[其中 R1、R2、R3、R4 和 R5 各自独立地为氢、甲基、乙基、苯基、氨基、磺基、羧基、氨基甲基、羧基甲基、磺基甲基、邻氨基苯基、间氨基苯基、对氨基苯基、邻羧基苯基、间羧基苯基、对羧基苯基、邻磺基苯基、间磺基苯基或对磺基苯基]。