The invention provides a metal polishing liquid comprising an oxidizing agent and colloidal silica in which a part of a surface of the colloidal silica is covered with aluminum atoms, and a Chemical Mechanical Polishing method using the same. An amino acid, a compound having an isothiazoline-3-one skeleton, an organic acid, a passivated film forming agent, a cationic surfactant, a nonionic surfactant, and a water-soluble polymer may be contained. A metal polishing liquid which is used in Chemical Mechanical Polishing in manufacturing of a semiconductor device, attains low dishing of a subject to be polished, and can perform polishing excellent in in-plane uniformity of a surface to be polished.
本发明提供了一种由氧化剂和胶体
二氧化硅组成的
金属抛光液,其中胶体
二氧化硅的部分表面被铝原子覆盖,并提供了使用该抛光液的
化学机械抛光方法。其中可能含有一种
氨基酸、一种具有
异噻唑啉-3-酮骨架的化合物、一种有机酸、一种钝化成膜剂、一种
阳离子表面活性剂、一种非离子表面活性剂和一种
水溶性聚合物。一种
金属抛光液,用于半导体器件制造过程中的
化学机械抛光,可实现待抛光对象的低变位,并能出色地完成待抛光表面的面内均匀性抛光。