1-(5-ethyl-2-hydroxy-phenyl)-2-(1(2)H-tetrazol-5-yl)-ethanone | 64953-26-0

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: 1-(5-ethyl-2-hydroxy-phenyl)-2-(1(2)H-tetrazol-5-yl)-ethanone
• 英文别名: 1-(5-ethyl-2-hydroxyphenyl)-2-(2H-tetrazol-5-yl)ethanone
• CAS: 64953-26-0
• 化学式: C₁₁H₁₂N₄O₂
• 分子量: 232.242
• InChiKey: IQTHNDWSBGGFBB-UHFFFAOYSA-N

物化性质

• 沸点：
  480.2±55.0 °C(Predicted)
• 密度：
  1.358±0.06 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  1.8
• 重原子数：
  17
• 可旋转键数：
  4
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.27
• 拓扑面积：
  91.8
• 氢给体数：
  2
• 氢受体数：
  5

文献信息

• Aqueous polishing liquid and chemical mechanical polishing method
  申请人：Kato Tomo

  公开号：US20070069176A1

  公开（公告）日：2007-03-29

  An aqueous polishing liquid is provided that includes an oxidizing agent, a five-membered monocyclic compound having at least three nitrogen atoms or a compound in which a hetero ring is fused to said compound, and a compound having an imidazole skeleton or an isothiazolin-3-one skeleton. The five-membered monocyclic compound having at least three nitrogen atoms and/or the compound in which a hetero ring is fused to said compound is used at a total concentration of less than 300 mg/L, and the compound having an imidazole skeleton or an isothiazolin-3-one skeleton is used at a concentration of at least 10 mg/L but no greater than 500 mg/L. There is also provided a chemical mechanical polishing method that includes a step of polishing by making a surface to be polished and a polishing surface move relative to each other while being in contact with each other in the presence of the aqueous polishing liquid.
• Metal-polishing liquid and chemical mechanical polishing method using the same
  申请人：Yamashita Katsuhiro

  公开号：US20070186484A1

  公开（公告）日：2007-08-16

  The invention provides a metal polishing liquid comprising an oxidizing agent and colloidal silica in which a part of a surface of the colloidal silica is covered with aluminum atoms, and a Chemical Mechanical Polishing method using the same. An amino acid, a compound having an isothiazoline-3-one skeleton, an organic acid, a passivated film forming agent, a cationic surfactant, a nonionic surfactant, and a water-soluble polymer may be contained. A metal polishing liquid which is used in Chemical Mechanical Polishing in manufacturing of a semiconductor device, attains low dishing of a subject to be polished, and can perform polishing excellent in in-plane uniformity of a surface to be polished.
• POLISHING COMPOSITION AND METHOD OF POLISHING WITH THE SAME
  申请人：Takenouchi Kenji

  公开号：US20070287362A1

  公开（公告）日：2007-12-13

  A polishing composition comprises: at least one compound selected from tetrazole compounds and derivatives thereof and anthranilic acid compounds and derivatives thereof; abrasive particles comprising associative abrasive particles; and an oxidizing agent.
• US7547335B2
  申请人：——

  公开号：US7547335B2

  公开（公告）日：2009-06-16
• US7857985B2
  申请人：——

  公开号：US7857985B2

  公开（公告）日：2010-12-28