methyl 2-acetoxy-4-phenylbutyrate | 1173990-22-1

• 分子结构分类: 有机化合物 - 脂质和类脂质分子 - 脂肪酰基
• 英文名称: methyl 2-acetoxy-4-phenylbutyrate
• 英文别名: methyl 2-acetoxy-4-phenylbutanoate；2-Acetoxy-4-phenylbutanoic acid methyl ester；methyl 2-acetyloxy-4-phenylbutanoate
• CAS: 1173990-22-1
• 化学式: C₁₃H₁₆O₄
• 分子量: 236.268
• InChiKey: XORJJQPJPVIZLU-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.4
• 重原子数：
  17
• 可旋转键数：
  7
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.38
• 拓扑面积：
  52.6
• 氢给体数：
  0
• 氢受体数：
  4

反应信息

• 作为产物：
  描述：

  2-羟基-4-苯基丁酸 在 吡啶 、 4-二甲氨基吡啶 、 对甲苯磺酸 作用下， 以 二氯甲烷 、 甲苯 为溶剂， 反应 4.0h， 生成 methyl 2-acetoxy-4-phenylbutyrate
  参考文献：
  名称：

  脂肪酶PS-30催化的立体选择性酰化反应对扁桃酸酯的动力学拆分

  摘要：

  通过使用脂肪酶PS-30作为催化剂，已通过立体选择性酰化反应实现了一系列外消旋扁桃酸酯的动力学拆分。动力学对映体比率（E）的值达到197.5。简要讨论了取代基的作用。

  DOI：

  10.1016/j.tetlet.2014.02.095

文献信息

• Carboxylation with CO₂ via Brook Rearrangement: Preparation of α-Hydroxy Acid Derivatives
  作者：Tsuyoshi Mita、Yuki Higuchi、Yoshihiro Sato

  DOI：10.1021/ol403099f

  日期：2014.1.3

  rearrangement. A variety of α-substituents including aryl, alkenyl, and alkyl groups were tolerated to afford α-hydroxy acids in moderate-to-high yields. One-pot synthesis from aldehydes using PhMe2SiLi and CO2 was also possible, providing α-hydroxy acids without the isolation of an α-hydroxy silane.

  在CsF的存在下，通过布鲁克重排在CO 2气氛（1atm）下将多种α-取代的α-甲硅烷氧基硅烷羧化。可以耐受包括芳基，烯基和烷基在内的各种α-取代基，以中等至高收率得到α-羟基酸。也可以使用PhMe 2 SiLi和CO 2从醛进行一锅法合成，无需分离α-羟基硅烷即可提供α-羟基酸。
• One-Portion Synthesis of 2-Acetoxy Carbonyl Compounds from Aldehydes by Using an Acetylated Masked Acyl Cyanide
  作者：Hisao Nemoto、Tomoyuki Kawamura、Kyoko Kitasaki、Kenji Yatsuzuka、Masaki Kamiya、Yasuko Yoshioka

  DOI：10.1055/s-0028-1088044

  日期：2009.5

  α-Acetoxy esters or amides were synthesized directly and in one portion from aldehydes and alcohols or amines by one-carbon homologation using a masked acyl cyanide reagent bearing an acetyl group. masked acyl cyanide - one-portion synthesis - 2-acetoxy esters - 2-acetoxy amides - umpolung

  使用带有乙酰基的带掩蔽的酰基氰化物试剂，通过一碳同源性，由醛，醇或胺直接和一部分地从醛，醇或胺中直接合成α-乙酰氧基酯或酰胺。 掩蔽的酰基氰化物-一份合成-2-乙酰氧基酯-2-乙酰氧基酰胺-umpolung
• Pattern forming method, composition kit and resist film, manufacturing method of electronic device using these, and electronic device
  申请人：FUJIFILM Corporation

  公开号：US10031419B2

  公开（公告）日：2018-07-24

  There is provided a pattern forming method comprising (i) forming a film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition which contains (A) a resin which decomposes due to an action of an acid to change its solubility with respect to a developer and (C) a specific resin, (ii) forming a top coat layer using a top coat composition which contains a resin (T) on the film, (iii) exposing the film which has the top coat layer to actinic rays or radiation, and (iv) forming a pattern by developing the film which has the top coat layer after the exposing.

  本发明提供了一种图案形成方法，包括(i)使用感光树脂组合物或辐射敏感树脂组合物在基底上形成胶片，该组合物包含(A)由于酸的作用而分解，从而改变其相对于显影剂的溶解度的树脂和(C)特定树脂、(ii) 使用含有树脂 (T) 的表层组合物在胶片上形成表层，(iii) 将具有表层的胶片暴露于放 射线或辐射，(iv) 在暴露后对具有表层的胶片进行显影，形成图案。
• PATTERN FORMING METHOD, COMPOSITION KIT AND RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THESE, AND ELECTRONIC DEVICE
  申请人：FUJIFILM Corporation

  公开号：US20160048075A1

  公开（公告）日：2016-02-18

  There is provided a pattern forming method comprising (i) forming a film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition which contains (A) a resin which decomposes due to an action of an acid to change its solubility with respect to a developer and (C) a specific resin, (ii) forming a top coat layer using a top coat composition which contains a resin (T) on the film, (iii) exposing the film which has the top coat layer to actinic rays or radiation, and (iv) forming a pattern by developing the film which has the top coat layer after the exposing.
• ORGANIC THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME
  申请人：FUJIFILM Corporation

  公开号：US20160372662A1

  公开（公告）日：2016-12-22

  An organic thin-film transistor including: a gate electrode, an organic semiconductor layer, a gate insulating layer, a source electrode, and a drain electrode on a substrate, in which the organic semiconductor layer includes an organic semiconductor and a resin (C) having one or more groups selected from the group consisting of a group having fluorine atoms, a group having silicon atoms, an alkyl group having one or more carbon atoms or having two or more carbon atoms in a case of forming an alkoxycarbonyl group, a cycloalkyl group, an aralkyl group, an aryloxycarbonyl group, an aromatic ring group substituted with at least one alkyl group, and an aromatic ring group substituted with at least one cycloalkyl group; and a method for manufacturing an organic thin-film transistor including: applying a coating solution which contains the organic semiconductor and the resin (C) and causing the resin (C) to be unevenly distributed.