GILCHRIST, T. L.;REES, C. W.;TUDDENHAM, D., J. CHEM. SOC. PERKIN TRANS., 1981, N 12, 3214-3220
作者:GILCHRIST, T. L.、REES, C. W.、TUDDENHAM, D.
DOI:——
日期:——
RESIST UNDERLAYER FILM COMPOSITION, PROCESS FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS AND FULLERENE DERIVATIVE
申请人:Watanabe Takeru
公开号:US20110195362A1
公开(公告)日:2011-08-11
There is disclosed a resist underlayer film composition of a multilayer resist film used in lithography including (A) a fullerene derivative having a carboxyl group protected by a thermally labile group and (B) an organic solvent. There can be a resist underlayer film composition of a multilayer resist film used in lithography for forming a resist underlayer in which generation of wiggling in substrate etching can be highly suppressed and the poisoning problem in forming an upper layer pattern using a chemically amplified resist can be avoided, a process for forming the resist underlayer film, a patterning process and a fullerene derivative.
US8835092B2
申请人:——
公开号:US8835092B2
公开(公告)日:2014-09-16
Generation of 3-methoxy-3a-methyl-3aH-indene and study of its cycloaddition reactions
作者:Thomas L. Gilchrist、Charles W. Rees、David Tuddenham
DOI:10.1039/p19810003214
日期:——
The title compound (1) has been prepared form indan-1-one by Birch reduction and methylation followed by the introduction of a further double bond, enolisation of the ketone, and O-methylation. The tetraenol ether (1) is the first 3aH-indene derivative to be isolated. It is shown to be oxidised by air to the Z-cinnamic ester (5), and to undergo ready rearrangement to the 1H-indene (7). Cycloadditions