A chemically amplified resist material of the present invention is used in a process including: patternwise exposing a predetermined region of resist material film to ionizing radiation or nonionizing radiation; floodwise exposing the resist material film patternwise exposed to nonionizing radiation; baking the resist material film floodwise exposed; and developing resist material film to form a resist pattern, the chemically amplified resist material containing: (1) base component; and (2) a component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure, wherein the component (2) contains, among (a) a radiation-sensitive acid-and-sensitizer generating agent, (b) a radiation-sensitive sensitizer generating agent, and (c) a radiation-sensitive acid generating agent: the components (a) and (b); the components (b) and (c); or all of the components (a) to (c), and wherein the component (b) contains a compound represented by formula (A).
本发明的一种
化学放大抗蚀剂材料用于一种工艺中,该工艺包括:将抗蚀剂材料薄膜的预定区域图案化暴露于电离辐射或非电离辐射中;将抗蚀剂材料薄膜图案化暴露于非电离辐射中;烘烤被图案化暴露的抗蚀剂材料薄膜;显影抗蚀剂材料薄膜以形成抗蚀剂图案,该
化学放大抗蚀剂材料包含:(1)碱成分;和(2)能在曝光时生成辐射敏感敏化剂和酸的成分,其中成分(2)包含(a)辐射敏感酸和敏化剂生成剂,(b)辐射敏感敏化剂生成剂,和(c)辐射敏感酸生成剂:组分 (a) 和 (b);组分 (b) 和 (c);或组分 (a) 至 (c) 的全部,其中组分 (b) 包含式 (A) 所代表的化合物。