Structure–property relationship in high triplet energy host materials with a phenylcarbazole core and diphenylphosphine oxide substituent
摘要:
A series of high triplet energy host materials with a carbazole core and a diphenylphosphine oxide substituent were synthesized and the effect of the substitution position on the photophysical properties and device performances of the host material was investigated. The substitution position of the diphenylphosphine oxide on the phenyl ring was changed and the substitution at ortho position of the phenyl ring induced the intramolecular charge transfer complex formation. The intramolecular charge transfer complex formation in the ortho substituted compound improved the current density. A maximum quantum efficiency of 20.4% was obtained in the phenylcarbazole host material with the phosphine oxide at para position of the phenyl group and the efficiency was degraded in the ortho substituted host. (C) 2011 Elsevier B.V. All rights reserved.
Structure–property relationship in high triplet energy host materials with a phenylcarbazole core and diphenylphosphine oxide substituent
摘要:
A series of high triplet energy host materials with a carbazole core and a diphenylphosphine oxide substituent were synthesized and the effect of the substitution position on the photophysical properties and device performances of the host material was investigated. The substitution position of the diphenylphosphine oxide on the phenyl ring was changed and the substitution at ortho position of the phenyl ring induced the intramolecular charge transfer complex formation. The intramolecular charge transfer complex formation in the ortho substituted compound improved the current density. A maximum quantum efficiency of 20.4% was obtained in the phenylcarbazole host material with the phosphine oxide at para position of the phenyl group and the efficiency was degraded in the ortho substituted host. (C) 2011 Elsevier B.V. All rights reserved.
Site-Selective N-Arylation of Carbazoles with Halogenated Fluorobenzenes
作者:Ning Liu、Bin Dai、Lei Wang、Enhui Ji
DOI:10.1055/s-0035-1560386
日期:——
A method for the highly site-selective C-N bond-formation reaction of halogenated fluorobenzenes with carbazoles is described. The selectivity of iodine and fluorine atoms on the aromatic ring of fluorinated iodobenzenes was initially determined with a copper-N,N-diisopropylethylamine catalytic system. By changing the position of the iodine atom on the aromatic ring from the 3- or 4-position to the 2-position, the preferred coupling site was switched from the iodine atom to the fluorine atom. Steric hindrance of the fluorinated iodobenzenes is responsible for the selectivity switch. After elucidating the reaction mechanisms of these reaction processes, a metal-free method for the highly site-selective C-N bond-formation reaction of halogenated fluorobenzenes with carbazoles was revealed through C-F bond activation. The metal-free system is able to handle a range of halogenated groups. Thus, a broad range of chlorinated, brominated, and iodinated N-arylated carbazoles were generated, which are widely useful in organic chemistry.
CARBAZOLE MIT ZWEI DIBENZOFURAN- ODER DIBENZOTHIOPHENSUBSTITUENTEN
申请人:Merck Patent GmbH
公开号:EP3237409B1
公开(公告)日:2022-01-05
CARBAZOLES WITH TWO DIBENZOFURAN OR DIBENZOTHIOPHENE SUBSTITUENTS
申请人:Merck Patent GmbH
公开号:US20190044071A1
公开(公告)日:2019-02-07
The present invention relates to carbazoles having two dibenzofuran or dibenzothiophene substituents, and to electronic devices, especially organic electroluminescent devices, comprising these compounds.