1-Hydroxy-3-aethoxy-adamantan | 1078-86-0

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: 1-Hydroxy-3-aethoxy-adamantan
• 英文别名: 3-Ethoxyadamantan-1-ol
• CAS: 1078-86-0
• 化学式: C₁₂H₂₀O₂
• 分子量: 196.29
• InChiKey: WYKWVQXOHRHXMN-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.7
• 重原子数：
  14
• 可旋转键数：
  2
• 环数：
  4.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  29.5
• 氢给体数：
  1
• 氢受体数：
  2

反应信息

• 作为产物：
  描述：

  乙醇 、 7-亚甲基双环[3.3.1]壬-3-酮 在 硫酸 作用下， 生成 1-Hydroxy-3-aethoxy-adamantan
  参考文献：
  名称：

  烷基化的3-氯丙醇及其醚的溶剂分解中的竞争性裂解，取代和消除。碎片反应编号 28岁

  摘要：

  未应变3- chloroalcohols 1A，2A和3A中不发生在中性和弱酸性的80％乙醇溶剂化碎片，仅替代和消除产物由限制性形成小号Ñ 1 - E1的机制。这也适用于相应的醚1b和3b。加入氢氧化钠会使3-氯醇的观测到的速率常数急剧上升至少10 3至10 5倍。由于相反的离子强度效应，这些在较高的碱浓度下趋于稳定。而3a片段定量在碱的存在下1A和2A片段与消除竞争的Δ 3烯烃9A和10分别。2a还产生2％的氧杂环丁烷6b。

  DOI：

  10.1002/hlca.19780610707

文献信息

• OPTICAL COMPONENT FORMING COMPOSITION AND CURED PRODUCT THEREOF
  申请人：Mitsubishi Gas Chemical Company, Inc.

  公开号：US20200262787A1

  公开（公告）日：2020-08-20

  The present invention provides an optical component forming composition comprising a tellurium-containing compound or a tellurium-containing resin.

  本发明提供了一种包括含碲化合物或含碲树脂的光学元件成型组合物。
• Polymer Compound, Photoresist Composition Including the Polymer Compound, and Resist Pattern Formation Method
  申请人：Ogata Toshiyuki

  公开号：US20080166655A1

  公开（公告）日：2008-07-10

  The present invention provides a polymer compound which can constitute a photoresist composition which is capable of having an excellent resolution, forming a fine pattern with a good rectangularity, obtaining favorable resist characteristics even when acid strength of a acid generated from an acid generator is weak, and having favorable sensitivity; a photoresist composition including the polymer compound; and a resist pattern formation method using the photoresist composition. The photoresist composition and the resist pattern formation method use the polymer compound including an alkali soluble group (i), wherein the alkali soluble group (i) is at least one substituent group selected from an alcoholic hydroxyl group, a carboxyl group, or a phenolic hydroxyl group, and the substituent group is protected by an acid dissociable, dissolution inhibiting group (ii) represented by a general formula (1): —CH 2 —OCH 2  n R 1 (1) (wherein R 1 represents a cycloaliphatic group which contains no more than 20 carbon atoms and may contain an oxygen atom, a nitrogen atom, a sulfur atom, or a halogen atom, and n represents 0 or an integer of 1 to 5.).

  本发明提供了一种聚合物化合物，该化合物可以构成一种光刻胶组合物，该组合物能够具有优异的分辨率，形成具有良好矩形度的精细图案，即使从酸发生器生成的酸的强度较弱，也能获得良好的抗性特性，并具有良好的灵敏度；包括该聚合物化合物的光刻胶组合物；以及使用该光刻胶组合物的抗性图案形成方法。该光刻胶组合物和抗性图案形成方法使用包括碱溶性基团（i）的聚合物化合物，其中碱溶性基团（i）是从醇羟基、羧基或酚羟基中至少选择一个取代基团，并且该取代基团由一种酸解离、抑制溶解的基团（ii）保护，该基团由通式（1）表示：—CH2—OCH2nR1（1）（其中R1表示不含有超过20个碳原子的环烷基团，可能含有氧原子、氮原子、硫原子或卤素原子，n表示0或1到5的整数）。
• POLYMERIC COMPOUND CONTAINING REPEATING UNIT HAVING 2-OXATRICYCLO[4.2.1.04,8]NONAN-3-ONE RING, AND PHOTORESIST RESIN COMPOSITION
  申请人：DAICEL CHEMICAL INDUSTRIES, LTD.

  公开号：EP1681307A1

  公开（公告）日：2006-07-19

  A polymeric compound of the invention includes at least one monomer unit represented by the following formula (I); wherein Ra is a hydrogen atom, a halogen atom, an alkyl group of 1 to 6 carbon atoms or an haloalkyl group of 1 to 6 carbon atoms; each of R1 and R2 is identical to or different from a hydrogen atom or a hydrocarbon group, provided that at least one of R1 and R2 is a hydrocarbon group; R1 and R2 may be bonded together to form a ring with an adjacent carbon atom; and each of R3, R4, R5, R6, R7, R8 and R9 is identical to or different from a hydrogen atom or a hydrocarbon group. This polymeric compound has not only high substrate adhesion and high etching resistance but also high solubility for a resist solvent.

  本发明的聚合化合物包括至少一个由下式 (I) 表示的单体单元； 其中，Ra 是氢原子、卤素原子、1 至 6 个碳原子的烷基或 1 至 6 个碳原子的卤代烷基；R1 和 R2 中的每一个与氢原子或烃基相同或不同，条件是 R1 和 R2 中至少有一个是烃基；R1 和 R2 可键合在一起，与相邻的碳原子形成一个环；R3、R4、R5、R6、R7、R8 和 R9 中的每一个与氢原子或烃基相同或不同。这种聚合化合物不仅具有高基底附着力和高抗蚀刻性，而且对抗蚀剂溶剂具有高溶解性。
• MATERIAL FOR FORMING UNDERLAYER FILMS FOR LITHOGRAPHY, COMPOSITION FOR FORMING UNDERLAYER FILMS FOR LITHOGRAPHY, UNDERLAYER FILM FOR LITHOGRAPHY AND METHOD FOR PRODUCING SAME, PATTERN FORMING METHOD, RESIN, AND PURIFICATION METHOD
  申请人：Mitsubishi Gas Chemical Company, Inc.

  公开号：EP3346335A1

  公开（公告）日：2018-07-11

  The present embodiment provides a material for forming an underlayer film for lithography, containing at least any of a compound represented by following formula (1) or a resin including a structural unit derived from a compound represented by the following formula (1), wherein R1 represents a 2n-valent group having 1 to 60 carbon atoms, or a single bond, each R2 independently represents a halogen atom, a straight, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an alkoxy group having 1 to 30 carbon atoms, a thiol group, a hydroxyl group, or a group where a hydrogen atom of a hydroxyl group is substituted with an acid-dissociable group, and may be the same or different in the same naphthalene ring or benzene ring, in which at least one R2 represents a group where a hydrogen atom of a hydroxyl group is substituted with an acid-dissociable group, n is an integer of 1 to 4, and structural formulae of n structural units in square brackets [] may be the same or different when n is an integer of 2 or more, X represents an oxygen atom, a sulfur atom, or an uncrosslinked state, each m2 is independently an integer of 0 to 7, provided that at least one m2 is an integer of 1 to 7, and each q is independently 0 or 1.

  本实施例提供了一种用于形成光刻用底层薄膜的材料，该材料至少含有下式（1）所代表的化合物中的任何一种，或包括由下式（1）所代表的化合物衍生出的结构单元的树脂、 其中 R1 代表具有 1 至 60 个碳原子的 2n 价基团或单键，每个 R2 独立地代表卤素原子、具有 1 至 10 个碳原子的直链、支链或环链烷基、具有 6 至 10 个碳原子的芳基、具有 2 至 10 个碳原子的烯基、具有 1 至 30 个碳原子的烷氧基、硫醇基、羟基或羟基的氢原子被酸分解基团取代的基团，这些基团在同一个萘环或苯环中可以相同或不同、其中至少一个 R2 代表羟基的氢原子被可酸水解基团取代的基团，n 为 1 至 4 的整数，当 n 为 2 或 2 以上的整数时，方括号[]中 n 个结构单元的结构式可以相同或不同，X 代表氧原子、硫原子或未交联状态，每个 m2 独立地为 0 至 7 的整数，条件是至少一个 m2 为 1 至 7 的整数，每个 q 独立地为 0 或 1。
• Stetter,H. et al., Chemische Berichte, 1965, vol. 98, p. 3888 - 3891
  作者：Stetter,H. et al.

  DOI：——

  日期：——