A novel molecular resist material based on polyhedral oligomeric silsesquioxane, possessing diazoketo groups, was successfully synthesized for deep UV lithography. The initial lithographic evaluation of the molecular resist shows the potential of the new platform for the next generation resists.
                                    成功合成了一种基于具有重
氮酮基团的多面体低聚
硅倍半氧烷的新型分子抗蚀剂材料,可用于深紫外光刻。对该分子抗蚀剂的初步光刻评估表明,这种新平台具有生产下一代抗蚀剂的潜力。