(2,2,3,3,4,4,5,5,6,6-decafluoro)-1-hexanol | 60838-60-0

• 分子结构分类: 有机化合物 - 有机卤素化合物 - 卤代醇
• 英文名称: (2,2,3,3,4,4,5,5,6,6-decafluoro)-1-hexanol
• 英文别名: 1.1.6-Trihydroperfluorohexanol；2,2,3,3,4,4,5,5,6,6-decafluoro-hexan-1-ol；2,2,3,3,4,4,5,5,6,6-Decafluorohexan-1-ol
• CAS: 60838-60-0
• 化学式: C₆H₄F₁₀O
• 分子量: 282.081
• InChiKey: DYJNIUWJUXNOOR-UHFFFAOYSA-N

物化性质

• 沸点：
  145.5±40.0 °C(Predicted)
• 密度：
  1.565±0.06 g/cm3(Predicted)
• 溶解度：
  氯仿（微溶）、甲醇（微溶）

计算性质

• 辛醇/水分配系数(LogP)：
  3
• 重原子数：
  17
• 可旋转键数：
  5
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  20.2
• 氢给体数：
  1
• 氢受体数：
  11

反应信息

• 作为反应物：
  描述：

  (2,2,3,3,4,4,5,5,6,6-decafluoro)-1-hexanol 、 3-异丙烯基-α,α-二甲基苄基异氰酸酯 在 二月桂酸二丁基锡 作用下， 反应 8.0h， 生成
  参考文献：
  名称：

  一种含苯基和氟碳链的疏水单体及基于该单 体的聚合物

  摘要：

  本发明提供了一种含苯基和氟碳链的疏水单体，所述单体的结构式如式I所示，以及所述单体的制备方法。并以烯基酰胺、烯基羧酸、所述含苯基和氟碳链的疏水单体、乳化剂和引发剂为反应原料，制备得到疏水缔合型聚合物。所述聚合物溶液粘度随浓度升高而急剧增大，抗温抗盐性好。本发明将含苯基和氟碳链的疏水单元同时引入分子中，增强了分子链的疏水作用，提高了聚合物的增粘能力，可用于钻井液、完井液、压裂液和三次采油等油田开发领域。

  公开号：

  CN106349181B
• 作为产物：
  描述：

  甲醇 、 四氟乙烯 在 双氧水 作用下， 生成 (2,2,3,3,4,4,5,5,6,6-decafluoro)-1-hexanol
  参考文献：
  名称：

  No,V.B. et al., Journal of Organic Chemistry USSR (English Translation), 1976, vol. 12, p. 1788

  摘要：

  DOI：

文献信息

• THERMAL ACID GENERATORS AND PHOTORESIST PATTERN TRIMMING COMPOSITIONS AND METHODS
  申请人：Rohm and Haas Electronic Materials LLC

  公开号：US20170123313A1

  公开（公告）日：2017-05-04

  Provided are ionic thermal acid generators of the following general formula (I): wherein: Ar 1 represents an optionally substituted carbocyclic or heterocyclic aromatic group; W independently represents a group chosen from carboxyl, hydroxy, nitro, cyano, C1-5 alkoxy and formyl; X is a cation; Y independently represents a linking group; Z independently represents a group chosen from hydroxyl, fluorinated alcohols, esters, optionally substituted alkyl, C5 or higher optionally substituted monocyclic, polycyclic, fused polycyclic cycloaliphatic, or aryl, which may optionally comprise a heteroatom, provided at least one occurrence of Z is a hydroxyl group; a is an integer of 0 or greater; b is an integer of 1 or greater; provided that a+b is at least 1 and not greater than the total number of available aromatic carbon atoms of the aromatic group. Also provided are photoresist pattern trimming compositions and methods of trimming a photoresist pattern using the trimming compositions. The thermal acid generators, compositions and methods find particular applicability in the manufacture of semiconductor devices.

  提供的是以下一般式(I)的离子热酸发生剂： 其中：Ar1代表一个可选取的取代的碳环或杂环芳香基团；W独立地代表从羧基，羟基，硝基，氰基，C1-5烷氧基和甲酰基中选择的一个基团；X是一个阳离子；Y独立地代表一个连接基团；Z独立地代表从羟基，氟化醇，酯类，可选取的取代烷基，C5或更高的可选取的单环，多环，融合多环环烷基或芳基中选择的一个基团，可以可选地包含一个杂原子，但至少有一个Z是一个羟基；a是大于或等于0的整数；b是大于或等于1的整数；但要求a+b至少为1且不大于芳香基团中可用的芳香碳原子的总数。此外，还提供了修剪光刻胶图案的组合物和方法。这些热酸发生剂、组合物和方法在半导体器件制造中具有特殊的适用性。
• Process for producing compound, catalyst component for addition polymerization, process for producing catalyst for addition polymerization, and process for producing addition polymer
  申请人：Oshima Hideki

  公开号：US20050222351A1

  公开（公告）日：2005-10-06

  There are provided (1) a process for producing a compound, which comprises the step of contacting a compound (A) defined by the formula, M 1 L 1 3 , a compound (B) defined by the formula, R 1 t-1 TH, and a compound (C) defined by the formula, R 2 t-2 TH 2 ; (2) a catalyst component for addition polymerization, which comprises a compound produced by said process; (3) a process for producing a polymerization catalyst, which comprises the step of contacting said catalyst component with a transition metal compound and an optional organoaluminum compound; and (4) a process for producing an addition polymer, which comprises the step of addition polymerizing an addition polymerizable monomer in the presence of a catalyst produced by said process.

  提供以下内容：（1）生产化合物的过程，包括将由M1L13公式定义的化合物（A）、由R1t-1TH公式定义的化合物（B）和由R2t-2TH2公式定义的化合物（C）接触的步骤；（2）用于加成聚合的催化剂组分，包括通过上述过程产生的化合物；（3）生产聚合催化剂的过程，包括将催化剂组分与过渡金属化合物和可选的有机铝化合物接触的步骤；（4）生产加成聚合物的过程，包括在上述过程产生的催化剂存在下加成聚合可聚合单体的步骤。
• CROSSLINKABLE POLYMERS AND UNDERLAYER COMPOSITIONS
  申请人：Rohm and Haas Electronic Materials LLC

  公开号：US20150210793A1

  公开（公告）日：2015-07-30

  A crosslinkable polymer comprising: a first unit of the following general formula (I-A) or (I-B): wherein: P is a polymerizable functional group; L is a single bond or an m+1-valent linking group; X 1 is a monovalent electron donating group; X 2 is a divalent electron donating group; Ar 1 and Ar 2 are trivalent and divalent aryl groups, respectively, and carbon atoms of the cyclobutene ring are bonded to adjacent carbon atoms on the same aromatic ring of Ar 1 or Ar 2 ; m and n are each an integer of 1 or more; and each R 1 is independently a monovalent group; and a second unit chosen from general formulae (III) and (IV): wherein R 7 is chosen from hydrogen, fluorine, C 1 -C 3 alkyl and C 1 -C 3 fluoroalkyl, R 8 is chosen from optionally substituted C 1 to C 10 alkyl, and Ar 3 is an optionally substituted aryl group. Underlayer compositions comprise the crosslinkable polymer and a solvent. The crosslinkable polymers and underlayer compositions find particular applicability in the manufacture of semiconductor devices or data storage devices for the formation of high resolution patterns.

  一种可交联聚合物，包括以下第一单元的一般式(I-A)或(I-B)：其中：P是聚合官能团；L是单键或m+1价连接基团；X1是单价电子供体基团；X2是双价电子供体基团；Ar1和Ar2分别是三价和二价芳基基团，环丁烯环上的碳原子与Ar1或Ar2的同一芳环上的相邻碳原子相键合；m和n均为1或更多的整数；每个R1独立地是单价基团；以及从一般式(III)和(IV)中选择的第二单元：其中R7选择自氢、氟、C1-C3烷基和C1-C3氟烷基，R8选择自可选取代的C1至C10烷基，而Ar3是可选取代的芳基基团。底层组成物包括可交联聚合物和溶剂。该可交联聚合物和底层组成物在制造半导体器件或数据存储器件的高分辨率图案形成中具有特定的适用性。
• PHOTORESIST OVERCOAT COMPOSITIONS
  申请人：Rohm and Haas Electronic Materials LLC

  公开号：US20160122574A1

  公开（公告）日：2016-05-05

  Photoresist overcoat compositions are provided. The compositions comprise: a matrix polymer, an additive polymer a basic quencher and an organic solvent. The additive polymer has a lower surface energy than a surface energy of the matrix polymer, and the additive polymer is present in the overcoat composition in an amount of from 1 to 20 wt % based on total solids of the overcoat composition. The compositions have particular applicability in the semiconductor manufacturing industry for use in negative tone development processes.

  提供了光阻覆盖层组合物。该组合物包括：基质聚合物、添加剂聚合物、碱性淬灭剂和有机溶剂。添加剂聚合物的表面能低于基质聚合物的表面能，并且添加剂聚合物在覆盖层组合物中的总固体量的1至20重量％的范围内存在。该组合物在半导体制造业中具有特定的适用性，用于负性调色剂开发过程。
• PHOTORESIST PATTERN TRIMMING COMPOSITIONS AND PATTERN FORMATION METHODS
  申请人：Rohm and Haas Electronic Materials LLC

  公开号：US20200379353A1

  公开（公告）日：2020-12-03

  Photoresist pattern trimming compositions comprise a polymer, an aromatic sulfonic acid, and an organic-based solvent system, wherein the aromatic sulfonic acid is of general formula (I): wherein: Ar 1 represents an aromatic group; R 1 independently represents a halogen atom, hydroxy, substituted or unsubstituted alkyl, substituted or unsubstituted heteroalkyl, substituted or unsubstituted carbocyclic aryl, substituted or unsubstituted heterocyclic aryl, substituted or unsubstituted alkoxy, or a combination thereof, wherein adjacent R 1 groups together optionally form a fused ring structure with Ar 1 ; a represents an integer of 2 or more; and b represents an integer of 1 or more, provided that a+b is at least 3 and is not greater than the total number of available aromatic carbon atoms of Ar 1 , and two or more of R 1 are independently a fluorine atom or a fluoroalkyl group bonded directly to an aromatic ring carbon atom.

  光阻图案修整组合物包括聚合物、芳香基磺酸和有机基溶剂系统，其中芳香基磺酸为通式（I）：其中：Ar1代表芳香基团；R1独立地代表卤素原子、羟基、取代或未取代的烷基、取代或未取代的杂环烷基、取代或未取代的碳环芳基、取代或未取代的杂环芳基、取代或未取代的烷氧基，或它们的组合，其中相邻的R1基团可选择与Ar1一起形成融合环结构；a代表2或更多的整数；b代表1或更多的整数，前提是a+b至少为3且不大于Ar1可用芳香碳原子的总数，而且其中两个或两个以上的R1独立地是直接与芳环碳原子相结合的氟原子或氟烷基团。