2-(1-Adamantyloxymethyl)-1,1,1,3,3,3-hexafluoropropan-2-ol

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: 2-(1-Adamantyloxymethyl)-1,1,1,3,3,3-hexafluoropropan-2-ol
• 英文别名: 2-(1-adamantyloxymethyl)-1,1,1,3,3,3-hexafluoropropan-2-ol
• 化学式: C₁₄H₁₈F₆O₂
• 分子量: 332.28
• InChiKey: STRGLZILBGSDFF-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  4.2
• 重原子数：
  22
• 可旋转键数：
  3
• 环数：
  4.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  29.5
• 氢给体数：
  1
• 氢受体数：
  8

文献信息

• NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD USING THE SAME
  申请人：Hoshino Wataru

  公开号：US20100203445A1

  公开（公告）日：2010-08-12

  An object of the present invention is to solve the technical task of enhancing the performance in micro-photofabrication using far ultraviolet light, particularly ArF excimer laser at a wavelength of 193 nm, and more specifically, provide a negative resist composition hardly allowing occurrence of pattern collapse and exhibiting good resolution even in the formation of a fine pattern, and a resist pattern forming method using the composition, which are a negative resist composition comprising (A) an alkali-soluble resin, (B) a compound that contains a low molecular compound having a molecular weight of 2,000 or less and having an oxetane structure, and (C) a cationic photopolymerization initiator, and a resist pattern forming method using the composition.