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lanthanum(III) tris-2,2,6,6-tetramethylheptane-3,5-dionate

中文名称
——
中文别名
——
英文名称
lanthanum(III) tris-2,2,6,6-tetramethylheptane-3,5-dionate
英文别名
tris(2,2,6,6-tetramethyl-3,5-heptanedionato)lanthanum;La(thd)3;Lanthanum(III)-dpm;lanthanum(3+);(Z)-2,2,6,6-tetramethyl-5-oxohept-3-en-3-olate
lanthanum(III) tris-2,2,6,6-tetramethylheptane-3,5-dionate化学式
CAS
——
化学式
C33H57LaO6
mdl
——
分子量
688.717
InChiKey
IXHLTRHDDMSNAP-LWTKGLMZSA-K
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    5.68
  • 重原子数:
    40
  • 可旋转键数:
    9
  • 环数:
    0.0
  • sp3杂化的碳原子比例:
    0.73
  • 拓扑面积:
    120
  • 氢给体数:
    0
  • 氢受体数:
    6

反应信息

  • 作为反应物:
    描述:
    参考文献:
    名称:
    Temperature dependent rate constants for the reactions of gas phase lanthanides with N2O
    摘要:
    The reactivity of gas phase lanthanide (Ln) atoms (Ln=La–Yb with the exception of Pm) with N2O from 298 to 623 K is reported. Lanthanide atoms were produced by the photodissociation of Ln(TMHD)3 (TMHD=2,2,6,6-tetramethyl-3,5-heptanato ion) and detected by laser-induced fluorescence. Large variations in the reaction rate constants are observed. The bimolecular rate constants are described in Arrhenius form by k[Ce(1G4)]=(1.9±0.5)×10−10 exp(−0.8±0.8 kJ mol−1/RT); Pr(4I9/2), (3.6±1.2)×10−10 exp(−8.0±1.2 kJ mol−1/RT); Nd(5I4), (3.4±0.4)×10−10 exp(−8.8±0.5 kJ mol−1/RT); Sm(7F0), (3.2±1.1)×10−10 exp(−11.2±1.2 kJ mol−1/RT); Eu(8S7/2), (2.7±0.4)±10−10 exp(−12.7±0.5 kJ mol−1/RT); Gd(9D2), (2.0±0.3)×10−10 exp(−6.4±0.5 kJ mol−1/RT); Tb(6H15/2), (2.9±0.5)×10−10 exp(−10.9±0.6 kJ mol−1/RT); Dy(5I8), (3.4±0.8)×10−10 exp(−16.2±0.8 kJ mol−1/RT); Ho(4I15/2), (2.9±0.5)×10−10 exp(−17.1±0.6 kJ mol−1/RT); Er(3H6), (3.3±1.2)×10−10 exp(−18.4±1.2 kJ mol−1/RT); Tm(2F7/2), (3.5±0.6)×10−10 exp(−19.5±0.6 kJ mol−1/RT); Yb(1S0), (2.5±0.2)×10−10 exp(−20.2±0.3 kJ mol−1/RT) where the uncertainties represent ±2σ. The reaction barriers are found to correlate to the energy required to promote an electron out of the 6s subshell.
    DOI:
    10.1063/1.479336
  • 作为产物:
    描述:
    lanthanum(III) tris-2,2,6,6-tetramethylheptane-3,5-dionate dihydrate 以 solid 为溶剂, 生成 lanthanum(III) tris-2,2,6,6-tetramethylheptane-3,5-dionate
    参考文献:
    名称:
    Gas-phase synthesis of lanthanide(III) benzoates Ln(Bz)3 (Ln = La, Tb, Lu)
    摘要:
    A new method for the synthesis and film deposition of nonvolatile aromatic lanthanide(III) carboxylates by li.-and exchange reaction between the starting volatile components in the gas phase was proposed. The complexes Ln(BZ)(3) (Ln = La3+, Tb3+, Lu3+; HBz = benzoic acid) were synthesized by gas-phase ligand exchange reaction between the volatile Ln(Thd)(3) and HBz (HThd = 2,2,6,6-tetramethylheptane-3,5-dione). The composition of the complexes was confirmed by elemental, thermal, IR-spectroscopic, and photoluminescence analyses and, in the case of lanthanum and lutetium complexes, by H-1 NMR.
    DOI:
    10.1134/s1070328407060115
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文献信息

  • Growth of La<sub>1−x</sub>Sr<sub>x</sub>FeO<sub>3</sub>thin films by atomic layer deposition
    作者:Martin Lie、Ola Nilsen、Helmer Fjellvåg、Arne Kjekshus
    DOI:10.1039/b809974j
    日期:——
    Thin films of La1−xSrxFeO3 have been prepared by the ALD (atomic layer deposition) technique using La(thd)3 (Hthd = 2,2,6,6-tetramethylheptane-3,5-dione), Sr(thd)2, Fe(thd)3, and ozone as precursors. A so-called ALD window is found in the temperature range 200 to 360 °C for LaFeO3. The effect of the pulsing procedure for the precursors on the composition of the films is examined. The results are discussed in relation to a model which ascribes differences between pulsed and obtained stoichiometries to individually different surface-area demands of the precursors. The La1−xSrxFeO3 films turned out to contain only small amounts of carbonate impurities despite the fact that films prepared from Sr(thd)2 and ozone under the same conditions contains virtually pure SrCO3. Films of La1−xSrxFeO3 have been deposited on substrates of (amorphous) soda-lime glass and single crystals of Si(100), SrTiO3(100), and LaAlO3(012). Annealed films on soda-lime glass and Si(100) substrates turned out to be polycrystalline with virtually random orientation of the crystallites. Those on MgO(100) and SrTiO3(100) substrates showed some degree of crystal orientation, whereas the annealed films on LaAlO3(012) proved to contain distinctly oriented crystallites with mosaic features.
    薄膜La1-xSrxFeO3是通过原子层沉积(ALD)技术制备的,使用的前驱体包括La(thd)3(Hthd = 2,2,6,6-四甲基庚烯-3,5-二酮)、Sr(thd)2、Fe(thd)3和臭氧。在200到360°C的温度范围内发现了所谓的ALD窗口。研究了前驱体脉冲程序对薄膜成分的影响。结果与一个模型进行了讨论,该模型将脉冲和获得的化学计量比之间的差异归因于前驱体对表面积的不同需求。尽管在相同条件下由Sr(thd)2和臭氧制备的薄膜几乎纯净为SrCO3,但La1-xSrxFeO3薄膜发现仅含少量碳酸盐杂质。La1-xSrxFeO3膜已在(无定形)钠钙玻璃和Si(100)、SrTiO3(100)及LaAlO3(012)的单晶基底上沉积。钠钙玻璃和Si(100)基底上的退火薄膜被发现是多晶的,晶粒呈几乎随机取向。而在MgO(100)和SrTiO3(100)基底上的薄膜则显示出一定程度的晶体取向,而在LaAlO3(012)上的退火薄膜则含有具有明显取向特征的晶粒。
  • Stabilization of ambient sensitive atomic layer deposited lanthanum aluminates by annealing and<i>in situ</i>capping
    作者:J. Swerts、S. Gielis、G. Vereecke、A. Hardy、D. Dewulf、C. Adelmann、M. K. Van Bael、S. Van Elshocht
    DOI:10.1063/1.3557501
    日期:2011.3.7
    We have studied the effect of air exposure on lanthanum aluminates (LaAlOx) deposited by atomic layer deposition. Fourier transform infrared spectroscopy and thermal desorption spectroscopy of as-deposited LaAlOx showed that H2O is absorbed during air exposure and that the amount of absorbed H2O increases with increasing La atomic percent. C was found to be incorporated already during deposition in
    我们研究了空气暴露对通过原子层沉积法沉积的铝酸镧 (LaAlOx) 的影响。沉积态 LaAlOx 的傅里叶变换红外光谱和热解吸光谱表明,H2O 在空气暴露期间被吸收,并且吸收的 H2O 量随着 La 原子百分比的增加而增加。发现 C 在沉积过程中已经以碳酸盐的形式掺入。H2O 和 CO2 在惰性气氛中的沉积后退火过程中被除气。在 700 °C 的沉积后退火后,由于薄膜致密化,LaAlOx 变得抵抗 H2O 吸收。或者,用约 2 nm 的 Al2O3 薄膜原位覆盖 LaAlOx 可保护 LaAlOx 免受 H2O 吸收,但它也阻碍了在沉积后退火过程中 C 污染物的脱气。
  • Studies on the mixed ligand complexes of rare earths with dipivaloylmethane and pyrazine
    作者:M. Shameem Ansari、Naseer Ahmad
    DOI:10.1016/0022-1902(75)80838-4
    日期:1975.10
    The mixed ligand complexes, tris(dipivaloylmethanato) pyrazinates of trivalent lanthanide (except Ce, Pm and Lu) and yttrium ions were synthesised and characterised by elemental analyses, melting points, thermogravimetric analyses, magnetic moments, molar conductances and i.r. spectrum. The complexes are Ln(dpm)3Pz where Ln = trivalent lanthanide or yttrium ion, dpm = dipivaloylmethane and Pz = pyrazine
    合成了混合的配体配合物,三价镧系元素的三(对二戊酰甲酰氨基)吡嗪酸盐(Ce,Pm和Lu除外)和钇离子,并通过元素分析,熔点,热重分析,磁矩,摩尔电导和红外光谱对其进行了表征。络合物为Ln(dpm)3 Pz,其中Ln =三价镧系元素或钇离子,dpm =二戊酰甲烷,Pz​​ =吡嗪。熔点随着原子序数的增加而降低。在吡嗪在氮气下加热之前,失去了二戊酰甲烷。络合物是非电解质。磁矩是正常的。讨论了红外光谱。
  • Mixed ligand complexes of trivalent lanthanide ions with β-diketones and heterocyclic amines and their use as possible shift reagents
    作者:Mohd Sayeed、Naseer Ahmad
    DOI:10.1016/0022-1902(81)80088-7
    日期:1981.1
    thermogravimetric analysis, and IR spectral studies. The trivalent lanthanide ions have a coordination number of ten in the series Ln(TFAA)3dipy·2H2O. Their avidity to enhance their coordination number is so great that een in the presence of three such bulky ligands as heptafluorooctane dione the Ln(fod)3 still coordinates with o-phen. Hexacoordinated trivalent lanthanides act as LIS reagents but it has been observed
    通式为Ln(TFAA)3 o-phen,Ln(TFAA)3 dipy·2H 2 O,Ln(dpm)3 im,Ln(dpm )的三价镧系元素(Pm和Lu除外)和钇的六十种新络合物)3 pz和Ln(fod)3 o-phen,其中TFAA =三氟乙酰基丙酮-H,dpm = 2,2,6,6-四甲基3,5-庚烷二酮-H,fod = 1,1,1, 2,2,3,3-七氟,7,7-二甲基4,6-辛烷二酮-H,o-phen = 1,10-菲咯啉,dipy = 2,2'dipyridyl,im =咪唑和pz =吡唑,已通过元素分析,熔点,摩尔电导,磁化率,热重分析和红外光谱研究合成并表征。三价镧系离子在Ln(TFAA)系列中的配位数为103枇·2H 2 O.它们的亲合力,以提高他们的配位数是如此之大,在EEN的三个这样的大体积配体如heptafluorooctane存在二酮的LN(FOD)3仍然坐标与邻苯。六
  • Electrical Conductivity and Oxygen Exchange Kinetics of La[sub 2]NiO[sub 4+δ] Thin Films Grown by Chemical Vapor Deposition
    作者:Gemma Garcia、Mónica Burriel、Nikolaos Bonanos、José Santiso
    DOI:10.1149/1.2829900
    日期:——
    characterizations were performed on thin (50 nm) and thick (335 nm) layers. The total specific conductivity, which is predominantly electronic, was found to be larger for the thinner films measured (50 nm), probably due to the effect of the strain present in the layers. Those thin films (50 nm) showed values even larger than those observed for single crystals and, to our knowledge, are the largest
    通过脉冲注入金属有机化学气相沉积技术将外延c轴取向的La 2 NiO 4+δ 薄膜沉积到SrTiO 3 和NdGaO 3 衬底上。优化实验条件以准确控制层的组成、厚度和纹理。X 射线衍射用于确认所得材料的高结晶质量。在薄 (50 nm) 和厚 (335 nm) 层上进行电气表征。发现测量的较薄薄膜(50 nm)的总比电导率(主要是电子电导率)更大,这可能是由于层中存在的应变的影响。这些薄膜 (50 nm) 显示的值甚至比观察到的单晶还要大,据我们所知,是迄今为止报道的 La 2 NiO 4+6 材料的最大电导率值。通过电导率弛豫技术研究氧交换动力学,由此确定表面交换系数。
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