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9-hydroxy-9-(phenanthryl-(9))-fluorene | 5467-23-2

中文名称
——
中文别名
——
英文名称
9-hydroxy-9-(phenanthryl-(9))-fluorene
英文别名
9-Hydroxy-9-(phenanthryl-(9))-fluoren;9--fluoren-9-ol;9-(Phenanthren-9-yl)-9h-fluoren-9-ol;9-phenanthren-9-ylfluoren-9-ol
9-hydroxy-9-(phenanthryl-(9))-fluorene化学式
CAS
5467-23-2
化学式
C27H18O
mdl
——
分子量
358.439
InChiKey
STMBLSPAFKRMST-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

物化性质

  • 熔点:
    193-194 °C(Solv: benzene (71-43-2); ligroine (8032-32-4))
  • 沸点:
    600.4±24.0 °C(Predicted)
  • 密度:
    1.297±0.06 g/cm3(Predicted)

计算性质

  • 辛醇/水分配系数(LogP):
    6.4
  • 重原子数:
    28
  • 可旋转键数:
    1
  • 环数:
    6.0
  • sp3杂化的碳原子比例:
    0.04
  • 拓扑面积:
    20.2
  • 氢给体数:
    1
  • 氢受体数:
    1

安全信息

  • 海关编码:
    2906299090

SDS

SDS:b9634932612e185a47de83e1a7b12e3b
查看

反应信息

  • 作为反应物:
    描述:
    9-hydroxy-9-(phenanthryl-(9))-fluorene乙酰氯 作用下, 生成 9-(9-chloro-fluoren-9-yl)-phenanthrene
    参考文献:
    名称:
    368. 9-芳基-9-氯芴和相关化合物在乙醇-丙酮,乙醇或甲醇中的溶剂分解动力学
    摘要:
    DOI:
    10.1039/jr9640001895
  • 作为产物:
    描述:
    9-芴酮9-溴菲正丁基锂 作用下, 以 四氢呋喃 为溶剂, 反应 19.5h, 以67%的产率得到9-hydroxy-9-(phenanthryl-(9))-fluorene
    参考文献:
    名称:
    化合物、有机电致发光材料和有机电致发光器件
    摘要:
    本发明涉及以下有机化合物,由如下通式(I)表示:R1~R8分别独立地选自氢、氰基、取代或未取代的C1~C20的脂肪烃基、取代或未取代的C6~C30的芳基;L1、L2为分别独立选自单键、C6~C30的亚芳基、C3~C30的亚杂芳基;Ar1为取代或未取代的C6~C60的芳基、取代或未取代的C3~C60的亚杂芳基,L3选自单键、取代或未取代的C6~C30的亚芳基、取代或未取代的C3~C30的亚杂芳基,Ar3为取代或未取代的C3~C30的亚杂芳基,其中,L3或Ar3之中,至少存在一个吡啶基或者亚吡啶基,L4为选自单键、取代或未取代的C6~C30的亚芳基,Ar2为取代或未取代的C6~C30的芳基。
    公开号:
    CN110498765B
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文献信息

  • PHENANTHRENE DERIVATIVES. VIII. HEXAARYLETHANES CONTAINING THE PHENANTHRENE NUCLEUS<sup>*</sup>
    作者:W. E. BACHMANN、M. C. KLOETZEL
    DOI:10.1021/jo01227a009
    日期:1937.9
  • Michailow; Tschernowa, Zhurnal Obshchei Khimii, 1951, vol. 21, p. 1517,1523; engl. Ausg. S. 1659, 1664
    作者:Michailow、Tschernowa
    DOI:——
    日期:——
  • Syntheses of Phenanthrene Derivatives. I. Reactions of 9-Phenanthrylmagnesium Bromide
    作者:W. E. Bachmann
    DOI:10.1021/ja01321a039
    日期:1934.6
  • COMPOSITION FOR FORMING ORGANIC FILM, PATTERNING PROCESS, AND POLYMER
    申请人:SHIN-ETSU CHEMICAL CO., LTD.
    公开号:US20210011384A1
    公开(公告)日:2021-01-14
    A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1A) as a repeating unit, and an organic solvent, where AR1 and AR2 each represent a benzene ring or a naphthalene ring which optionally have a substituent; each R represents a hydrogen atom or a monovalent organic group having 2 to 10 carbon atoms and an unsaturated bond; R′ represents a single bond or W1; and W1 represents a divalent organic group having 6 to 80 carbon atoms and one or more aromatic rings. This invention provides: a composition for forming an organic film, the composition containing a polymer having an indenofluorene structure with high carbon content and thermosetting property as to enable high etching resistance and excellent twisting resistance; a patterning process using this composition; and a polymer for providing such a composition for forming an organic film.
  • COATING-TYPE COMPOSITION FOR FORMING ORGANIC FILM, PATTERNING PROCESS, POLYMER, AND METHOD FOR MANUFACTURING POLYMER
    申请人:SHIN-ETSU CHEMICAL CO., LTD.
    公开号:US20210278766A1
    公开(公告)日:2021-09-09
    The present invention provides a. coating-type composition for forming an. organic film containing: a polymer having a structure shown by the following general formula (1) as a partial structure; and an organic solvent, where in the formula (1), ring structures Ar1 and Ar2 represent a benzene rive or a naphthalene ring optionally having a substituent, and W 1 represents an aryl croup having 6 to 30 carbon atoms and optionally having a substituent. This provides a coating-type composition for forming an organic film that can. form an organic film having high pattern-curving resistance and high dry-etching resistance, the composition being excellent in solvent solubility and having a low generation of defects.
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