PHENANTHRENE DERIVATIVES. VIII. HEXAARYLETHANES CONTAINING THE PHENANTHRENE NUCLEUS<sup>*</sup>
作者:W. E. BACHMANN、M. C. KLOETZEL
DOI:10.1021/jo01227a009
日期:1937.9
Michailow; Tschernowa, Zhurnal Obshchei Khimii, 1951, vol. 21, p. 1517,1523; engl. Ausg. S. 1659, 1664
作者:Michailow、Tschernowa
DOI:——
日期:——
Syntheses of Phenanthrene Derivatives. I. Reactions of 9-Phenanthrylmagnesium Bromide
作者:W. E. Bachmann
DOI:10.1021/ja01321a039
日期:1934.6
COMPOSITION FOR FORMING ORGANIC FILM, PATTERNING PROCESS, AND POLYMER
申请人:SHIN-ETSU CHEMICAL CO., LTD.
公开号:US20210011384A1
公开(公告)日:2021-01-14
A composition for forming an organic film contains a polymer having a partial structure shown by the following general formula (1A) as a repeating unit, and an organic solvent, where AR1 and AR2 each represent a benzene ring or a naphthalene ring which optionally have a substituent; each R represents a hydrogen atom or a monovalent organic group having 2 to 10 carbon atoms and an unsaturated bond; R′ represents a single bond or W1; and W1 represents a divalent organic group having 6 to 80 carbon atoms and one or more aromatic rings. This invention provides: a composition for forming an organic film, the composition containing a polymer having an indenofluorene structure with high carbon content and thermosetting property as to enable high etching resistance and excellent twisting resistance; a patterning process using this composition; and a polymer for providing such a composition for forming an organic film.
COATING-TYPE COMPOSITION FOR FORMING ORGANIC FILM, PATTERNING PROCESS, POLYMER, AND METHOD FOR MANUFACTURING POLYMER
申请人:SHIN-ETSU CHEMICAL CO., LTD.
公开号:US20210278766A1
公开(公告)日:2021-09-09
The present invention provides a. coating-type composition for forming an. organic film containing: a polymer having a structure shown by the following general formula (1) as a partial structure; and an organic solvent, where in the formula (1), ring structures Ar1 and Ar2 represent a benzene rive or a naphthalene ring optionally having a substituent, and W
1
represents an aryl croup having 6 to 30 carbon atoms and optionally having a substituent. This provides a coating-type composition for forming an organic film that can. form an organic film having high pattern-curving resistance and high dry-etching resistance, the composition being excellent in solvent solubility and having a low generation of defects.