1,2-bis(trifluoromethanesulfonyloxy)disilane | 134102-24-2

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 有机磺酸及其衍生物
• 英文名称: 1,2-bis(trifluoromethanesulfonyloxy)disilane
• 英文别名: Bis(trifluoromethanesulfonic acid)disilane-1,2-diyl ester；trifluoromethylsulfonyloxysilylsilyl trifluoromethanesulfonate
• CAS: 134102-24-2
• 化学式: C₂H₄F₆O₆S₂Si₂
• 分子量: 358.344
• InChiKey: YDUGRRBKKQISRP-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  -1.2
• 重原子数：
  18
• 可旋转键数：
  5
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  104
• 氢给体数：
  0
• 氢受体数：
  12

反应信息

• 作为反应物：
  描述：

  正辛基镁溴盐 、 1,2-bis(trifluoromethanesulfonyloxy)disilane 以 四氢呋喃 、 甲苯 为溶剂， 以68%的产率得到9,10-disilaoctadecane
  参考文献：
  名称：

  Long-chain alkanes with an internal H2SiSiH2 linkage

  摘要：

  1,2-Bis(p-tolyl)disilane (2) has been prepared through Wurtz-coupling of chloro(p-tolyl)silane using lithium metal. It was used as a precursor for 1,2-bis(trifluoromethanesulfonyloxy)disilane (1), which was obtained by treatment with two equivalents of trifluoromethanesulfonic acid. This intermediate was treated with n-BuLi, n-HexLi or n-OctMgBr to give the title compounds (n-CnH2n+1)SiH2SiH2(n-CnH2n+1) (n = 4,6,8), 4a-c. Treatment of 2 with only one equivalent of triflic acid gave p-TolSiH(2)SiH(2)OSO(2)CF(3) (5), which can be selectively converted into mixed alkyl-aryl-disilanes with LiR reagents, e.g. (n-Bu)SiH2SiH2(p-Tol), 6. The crystal structure of compound 2 has been determined by an X-ray diffraction study; it has a staggered trans-conformation with a crystallographic center of inversion.

  DOI：

  10.1016/0022-328x(96)06391-7
• 作为产物：
  描述：

  三氟甲磺酸 、 1,2-bis(p-tolyl)disilane 以 甲苯 为溶剂， 反应 1.0h， 生成 1,2-bis(trifluoromethanesulfonyloxy)disilane
  参考文献：
  名称：

  Long-chain alkanes with an internal H2SiSiH2 linkage

  摘要：

  1,2-Bis(p-tolyl)disilane (2) has been prepared through Wurtz-coupling of chloro(p-tolyl)silane using lithium metal. It was used as a precursor for 1,2-bis(trifluoromethanesulfonyloxy)disilane (1), which was obtained by treatment with two equivalents of trifluoromethanesulfonic acid. This intermediate was treated with n-BuLi, n-HexLi or n-OctMgBr to give the title compounds (n-CnH2n+1)SiH2SiH2(n-CnH2n+1) (n = 4,6,8), 4a-c. Treatment of 2 with only one equivalent of triflic acid gave p-TolSiH(2)SiH(2)OSO(2)CF(3) (5), which can be selectively converted into mixed alkyl-aryl-disilanes with LiR reagents, e.g. (n-Bu)SiH2SiH2(p-Tol), 6. The crystal structure of compound 2 has been determined by an X-ray diffraction study; it has a staggered trans-conformation with a crystallographic center of inversion.

  DOI：

  10.1016/0022-328x(96)06391-7
• 作为试剂：
  描述：

  magnesium,1,3,5-trimethylbenzene-6-ide,bromide 在 1,2-bis(trifluoromethanesulfonyloxy)disilane 作用下， 以 四氢呋喃 、 甲苯 为溶剂， 以15%的产率得到1,2-dimesityldisilane
  参考文献：
  名称：

  Soeldner, Marcus; Sandor, Mario; Schier, Annette, Chemische Berichte, 1997, vol. 130, # 11, p. 1671 - 1676

  摘要：

  DOI：

文献信息

• Tailor-made synthesis of functional substituted oligo- and polysilanes from silyl triflates and (aminosilyl)lithium compounds
  作者：Wolfram Uhlig

  DOI：10.1016/s0022-328x(03)00158-x

  日期：2003.11

  reaction and the amino-to-triflate transformation, functionalized tri-, tetra-, penta- and hexasilanes have been synthesized. α,ω-Triflate substituted oligosilanes containing π-systems have also been obtained. These compounds are useful building blocks for new organosilicon polymers. The formation of the silicon polymers at low temperatures, in short reaction times, and with high yields is reported. The 29Si-NMR

  由相应的苯基氯硅烷和锂原位制备了二乙氨基取代的甲硅烷基锂化合物。这些试剂与硅烷和低硅烷的三氟甲磺酸酯衍生物发生偶联反应。没有观察到与金属-卤素交换和SiSi键断裂类似的交换过程，这是与氯硅烷的副反应。基于偶联反应和氨基至三氟甲磺酸酯转化，已经合成了官能化的三，四，五和六硅烷。还获得了包含π-系统的α，ω-三氟甲苯磺酸酯取代的低聚硅烷。这些化合物是新型有机硅聚合物的有用组成部分。据报道，在低温下，短反应时间内以高收率形成了硅聚合物。在29Si-NMR光谱表明聚合物主链中结构单元的规则交替排列。
• Synthesis of Butane-Like SiGe Hydrides:  Enabling Precursors for CVD of Ge-Rich Semiconductors
  作者：Andrew V. G. Chizmeshya、Cole J. Ritter、Changwu Hu、Jesse B. Tice、John Tolle、Ronald A. Nieman、Ignatius S. T. Tsong、John Kouvetakis

  DOI：10.1021/ja060428j

  日期：2006.5.1

  by varying the global intensity, frequency scale, and admixture coefficients of the individual conformers. The (GeH(3))(2)(SiH(2))(2) (1) species was then utilized to fabricate Si(0.50)Ge(0.50) semiconductor alloys reflecting exactly the Si/Ge content of the precursor. Device quality layers were grown via gas source MBE directly on Si(100) at unprecedented low temperatures 350-450 degrees C and display

  类丁烷 (GeH(3))(2)(SiH(2))(2) (1)、(GeH(3))(2)SiH(SiH(3)) (2) 和 (2) 的合成GeH(3))(2)(SiH(2)GeH(2)) (3) Si-Ge 氢化物在低温合成富锗 Si(1-x)Ge(x) 光电合金中的应用证明了。通过 FTIR、多核 NMR、质谱、卢瑟福背散射和密度泛函理论 (DFT) 模拟研究了这些化合物的组成、振动、结构和热化学性质。分析表明线性 (GeH(3))(2)(SiH(2))(2) (1) 和 (GeH(3))(2)(SiH(2)GeH(2)) (3)化合物以经典的正常 (n) 和 gauche (g) 构象异构体的混合物形式存在，在 22 摄氏度时似乎不会相互转化。 样品中的构象比例是使用新的拟合程序确定的，它结合了计算出的分子光谱，通过改变个体构象异构体的全局强度、频率尺度和混合系数来重现观察到的分子光谱。然后利用
• Uhlig, Wolfram, Zeitschrift fur Naturforschung, B: Chemical Sciences, 2003, vol. 58, # 2-3, p. 183 - 190
  作者：Uhlig, Wolfram

  DOI：——

  日期：——