3-(2,2,2-trifluoroacetoxy)-1-adamantyl methacrylate | 1151809-20-9

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 英文名称: 3-(2,2,2-trifluoroacetoxy)-1-adamantyl methacrylate
• 英文别名: 3-(2,2,2-Trifluoroacetoxy)adamantyl methacrylate；[3-(2,2,2-trifluoroacetyl)oxy-1-adamantyl] 2-methylprop-2-enoate
• CAS: 1151809-20-9
• 化学式: C₁₆H₁₉F₃O₄
• 分子量: 332.32
• InChiKey: IFQIRMUQMHBSMY-UHFFFAOYSA-N

物化性质

• 沸点：
  337.2±42.0 °C(Predicted)
• 密度：
  1.30±0.1 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  4
• 重原子数：
  23
• 可旋转键数：
  5
• 环数：
  4.0
• sp3杂化的碳原子比例：
  0.75
• 拓扑面积：
  52.6
• 氢给体数：
  0
• 氢受体数：
  7

反应信息

• 作为产物：
  描述：

  3-羟基-1-金刚烷基甲基丙烯酸酯 、 碳酸氢钠 在 氮气 、 三氟乙酸酐 作用下， 以 四氢呋喃 、 乙酸乙酯 为溶剂， 以93%的产率得到3-(2,2,2-trifluoroacetoxy)-1-adamantyl methacrylate
  参考文献：
  名称：

  RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND COMPOUND

  摘要：

  一种辐射敏感的树脂组合物，包括具有以下公式（1）所代表的结构单元的第一聚合物和辐射敏感的酸发生剂。在公式（1）中，RC最好代表具有(n+1)价且具有4至30个碳原子的脂肪族多环烃基团。公式（1）所代表的结构单元最好是由以下公式（1-1）所代表的n的结构单元。

  公开号：

  US20130022912A1

文献信息

• Compound, resin, resist composition and method for producing resist pattern
  申请人：SUMITOMO CHEMICAL COMPANY, LIMITED

  公开号：US10725380B2

  公开（公告）日：2020-07-28

  A compound represented by the formula (I). wherein R1 represents a hydrogen atom, a halogen atom or a C1 to C6 alkyl group that may have a halogen atom; R2 represents a C1 to C12 fluorinated saturated hydrocarbon group; W1 represents a C5 to C18 divalent alicyclic hydrocarbon group; A1 and A2 independently represents a single bond or *—A3—X1—(A4—X2)a—; A3 and A4 independently represents a C1 to C6 alkanediyl group; X1 and X2 independently represents —O—, —CO—O—or —O—CO—; a represents 0 or 1; and * represents a bond to an oxygen atom.

  式 (I) 所代表的化合物。 其中 R1 代表氢原子、卤素原子或可能带有卤素原子的 C1 至 C6 烷基；R2 代表 C1 至 C12 氟化饱和烃基；W1 代表 C5 至 C18 二价脂环烃基；A1和A2独立地代表单键或*-A3-X1-(A4-X2)a-；A3和A4独立地代表C1至C6烷二基；X1和X2独立地代表-O-、-CO-O-或-O-CO-；a代表0或1；以及*代表与氧原子的键。
• POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：HARADA Yuji

  公开号：US20110177455A1

  公开（公告）日：2011-07-21

  A polymer comprising recurring units of formula (1) and having a solubility in alkaline developer which increases under the action of an alkaline developer is provided. The polymer has transparency to radiation of up to 200 nm and improved water repellency, water slip, acid lability and hydrolysis and is useful as an additive polymer to formulate a resist composition. R 1 is H, F, methyl, or trifluoromethyl, R 2 is a monovalent fluorinated hydrocarbon group, A n is a (n+1)-valent hydrocarbon or fluorinated hydrocarbon group, and n is 1, 2 or 3.
• RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN
  申请人：ICHIKAWA Koji

  公开号：US20130022917A1

  公开（公告）日：2013-01-24

  A resist composition having a resin having a structural unit represented by the formula (I), a resin being insoluble or poorly soluble in alkali aqueous solution, but becoming soluble in an alkali aqueous solution by the action of an acid and not including the structural unit represented by the formula (I), and an acid generator represented by the formula (II), wherein R 1 , A 1 , R 2 , R II1 , R II2 , L II1 , Y II1 , R II3 , R II4 , R II5 , R II6 , R II7 , n, s and R II8 are defined in the specification.
• RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN-FORMING METHOD, POLYMER, AND COMPOUND
  申请人：JSR CORPORATION

  公开号：US20130260315A1

  公开（公告）日：2013-10-03

  A radiation-sensitive resin composition includes a polymer component that includes one or more types of polymers, and a radiation-sensitive acid generator. At least one type of the polymer of the polymer component includes a first structural unit represented by a following formula (1). R 1 represents a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group. R 2 represents a linear alkyl group having 5 to 21 carbon atoms. Z represents a divalent alicyclic hydrocarbon group or an aliphatic heterocyclic group having a ring skeleton which has 4 to 20 atoms. A part or all of hydrogen atoms included in the alicyclic hydrocarbon group and the aliphatic heterocyclic group represented by Z are not substituted or substituted.
• PATTERN TREATMENT METHODS
  申请人：Rohm and Haas Electronic Materials LLC

  公开号：US20180031975A1

  公开（公告）日：2018-02-01

  A pattern treatment method, comprising: (a) providing a semiconductor substrate comprising a patterned feature on a surface thereof; (b) applying a pattern treatment composition to the patterned feature, wherein the pattern treatment composition comprises: a block copolymer and an organic solvent, wherein the block copolymer comprises: (i) a first block comprising a first unit formed from 4-vinyl-pyridine, and (ii) a second block comprising a first unit formed from a vinyl aromatic monomer; and (c) removing residual pattern shrink composition from the substrate, leaving a coating of the block copolymer over the surface of the patterned feature, thereby providing a reduced pattern spacing as compared with a pattern spacing of the patterned feature prior to coating the pattern treatment composition. The methods find particular applicability in the manufacture of semiconductor devices for providing high resolution patterns.