1,1,1-trifluoro-2-methyl-hexan-2-ol | 14633-64-8

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: 1,1,1-trifluoro-2-methyl-hexan-2-ol
• 英文别名: Methylbutyl-trifluormethyl-carbinol；1,1,1-Trifluoro-2-methylhexan-2-ol
• CAS: 14633-64-8
• 化学式: C₇H₁₃F₃O
• 分子量: 170.175
• InChiKey: AEODWXIFFMLVQS-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.7
• 重原子数：
  11
• 可旋转键数：
  3
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  20.2
• 氢给体数：
  1
• 氢受体数：
  4

反应信息

• 作为产物：
  描述：

  正丁基锂 、 1,1,1-三氟丙酮 生成 1,1,1-trifluoro-2-methyl-hexan-2-ol
  参考文献：
  名称：

  Preparation and reactions of lithium derivatives of trifluoropropene and trifluoropropyne

  摘要：

  DOI：

  10.1021/jo01265a055

文献信息

• PATTERNABLE LOW-K DIELECTRIC INTERCONNECT STRUCTURE WITH A GRADED CAP LAYER AND METHOD OF FABRICATION
  申请人：Lin Qinghuang

  公开号：US20110074044A1

  公开（公告）日：2011-03-31

  An interconnect structure is provided that includes at least one patterned and cured low-k material located on a surface of a patterned graded cap layer. The at least one cured and patterned low-k material and the patterned graded cap layer each have conductively filled regions embedded therein. The patterned and cured low-k material is a cured product of a functionalized polymer, copolymer, or a blend including at least two of any combination of polymers and/or copolymers having one or more acid-sensitive imageable groups, and the graded cap layer includes a lower region that functions as a barrier region and an upper region that has antireflective properties of a permanent antireflective coating.
• MULTIPLE PATTERNING USING IMPROVED PATTERNABLE LOW-k DIELECTRIC MATERIALS
  申请人：Lin Qinghuang

  公开号：US20120161296A1

  公开（公告）日：2012-06-28

  A double patterned semiconductor structure is provided. The structure includes a first patterned and cured low-k structure located on a first portion of an antireflective coating, and a second patterned and cured low-k structure located on a second portion of the antireflective coating, wherein the second patterned and cured low-k structure is spaced apart from the first patterned and cured low-k dielectric structure.
• US8202783B2
  申请人：——

  公开号：US8202783B2

  公开（公告）日：2012-06-19
• US8461039B2
  申请人：——

  公开号：US8461039B2

  公开（公告）日：2013-06-11
• US8487411B2
  申请人：——

  公开号：US8487411B2

  公开（公告）日：2013-07-16