Synthesis and Use of Partially Fluorinated Dialkyl Ethers Derived from Hexafluoropropylene
摘要:
A procedure was developed for preparing partially fluorinated dialkyl ethers by the reaction of hexafluoropropylene with aliphatic and polyfluorinated alcohols in the presence of KOH. On treatment with concentrated sulfuric acid, these ethers form alkyl esters of acids, and on treatment with KOH, alkenyl ethers.
METHOD FOR PRODUCING FLUORINE-CONTAINING CARBOXYLIC ACID ESTER
申请人:Central Glass Company, Limited
公开号:EP2161249A1
公开(公告)日:2010-03-10
[Task] It is to provide a production method that the target fluorine-containing carboxylic acid ester can be obtained from a fluorine-containing ether by a one-step reaction, that a complicated step and a troublesome operation are not necessary, and that an excessive energy is not consumed.
[Solving Means] A fluorine-containing carboxylic acid ester represented by the general formula R1HCFCOOR2 is produced by reacting a fluorine-containing ether represented by the general formula R1HCFCF2OR2 (R1 represents either of a fluorine atom and a C1-4 perfluoroalkyl group, and R2 represents a monovalent organic group) with water in the presence of a solid catalyst.
Knunjanz et al., Izvestiya Akademii Nauk SSSR, Seriya Khimicheskaya, 1953, p. 282,288;engl.Ausg.S.255,259
作者:Knunjanz et al.
DOI:——
日期:——
Method for Producing Fluorine-Containing Carboxylic Acid Ester
申请人:Kondo Takeshi
公开号:US20100197957A1
公开(公告)日:2010-08-05
[Task] It is to provide a production method that the target fluorine-containing carboxylic acid ester can be obtained from a fluorine-containing ether by a one-step reaction, that a complicated step and a troublesome operation are not necessary, and that an excessive energy is not consumed.
[Solving Means] A fluorine-containing carboxylic acid ester represented by the general formula R
1
HCFCOOR
2
is produced by reacting a fluorine-containing ether represented by the general formula R
1
HCFCF
2
OR
2
(R
1
represents either of a fluorine atom and a C
1-4
perfluoroalkyl group, and R
2
represents a monovalent organic group) with water in the presence of a solid catalyst.
Composition for Forming Films, Film Produced from Said Composition, and Method for Producing Organic Semiconductor Element Using Said Composition
申请人:CENTRAL GLASS COMPANY, LIMITED
公开号:US20160164047A1
公开(公告)日:2016-06-09
A film-forming composition according to the present invention includes: a fluororesin having a repeating unit of the formula (1) and a repeating unit of the general formula (2); and a fluorine-containing solvent.
In the general formula (2), R
1
represents a C
1
-C
15
straight, C
3
-C
15
branched or C
3
-C
15
cyclic hydrocarbon group in which at least one hydrogen atom may be replaced by a fluorine atom or chlorine atom and which may have a hydroxy group.
This film-forming composition is suitably usable for the manufacturing of an organic semiconductor element as the composition can form a fluororesin film on an organic semiconductor film; and the formed film has resistance to an etching solvent during the fine pattern processing of the organic semiconductor film by photolithography etc.
Film-Forming Composition, Film Formed Thereby, and Method for Manufacturing Organic Semiconductor Element Using Same
申请人:CENTRAL GLASS COMPANY, LIMITED
公开号:US20160181531A1
公开(公告)日:2016-06-23
A film-forming composition according to the present invention includes: a fluororesin having a repeating unit of the general formula (1); and a fluorine-containing solvent.
In the general formula (1), R
1
each independently represents a hydrogen atom, a fluorine atom, a methyl group or a trifluoromethyl group; and R
2
each independently represents a C
1
-C
15
straight, C
3
-C
15
branched or C
3
-C
15
cyclic fluorine-containing hydrocarbon group in which any hydrogen atom may be replaced by a fluorine atom with the proviso that the repeating unit contains at least one fluorine atom; and
This film-forming composition is suitably usable for the manufacturing of an organic semiconductor element because the composition can form a film on an organic semiconductor film; and the formed film has resistance to an etching solvent during the fine pattern processing of the organic semiconductor film by photolithography etc.