Etchant composition, method of etching insulating film, method of manufacturing semiconductor device, and silane compound
申请人:SK Innovation Co., Ltd.
公开号:US10836962B2
公开(公告)日:2020-11-17
An etchant composition includes a silane compound represented by the following Chemical Formula 1:
wherein R1 to R6 are independently hydrogen, halogen, a substituted or unsubstituted C1-C20 hydrocarbyl group, a phenyl group, a C1-C20 alkoxy group, a carboxy group, a carbonyl group, a nitro group, a tri (C1-C20)alkylsilyl group, a phosphoryl group, or a cyano group, L is a direct bond or C1-C3 hydrocarbylene, A is an n-valent radical, and n is an integer of 1 to 4.
蚀刻剂组合物包括由以下化学式 1 表示的硅烷化合物:
其中 R1 至 R6 独立地为氢、卤素、取代或未取代的 C1-C20 碳氢基、苯基、C1-C20 烷氧基、羧基、羰基、硝基、三(C1-C20)烷基硅基、磷酰基或氰基,L 为直接键或 C1-C3 碳氢基,A 为正价基,n 为 1 至 4 的整数。