聚(氧基-1,2-乙二基),a-[2-(叔-十二烷基硫代)乙基]-w-羟基- | 110453-36-6

• 分子结构分类: 有机化合物 - 有机氧化合物
• 中文名称: 聚(氧基-1,2-乙二基),a-[2-(叔-十二烷基硫代)乙基]-w-羟基-
• 英文名称: 2-[2-(9,9-Dimethyldecylsulfanyl)ethoxy]ethanol
• CAS: 110453-36-6；9004-83-5
• 化学式: C₁₆H₃₄O₂S
• 分子量: 290.5
• InChiKey: RPMGCDFPDJACFM-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  5.2
• 重原子数：
  19
• 可旋转键数：
  14
• 环数：
  0.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  54.8
• 氢给体数：
  1
• 氢受体数：
  3

文献信息

• AQUEOUS CLEANING COMPOSITION FOR POST COPPER CHEMICAL MECHANICAL PLANARIZATION
  申请人：Cabot Microelectronics Corporation

  公开号：EP2971248A1

  公开（公告）日：2016-01-20
• US20140264151A1
  申请人：——

  公开号：US20140264151A1

  公开（公告）日：2014-09-18
• [EN] AQUEOUS CLEANING COMPOSITION FOR POST COPPER CHEMICAL MECHANICAL PLANARIZATION<br/>[FR] COMPOSITION AQUEUSE DE NETTOYAGE POUR UNE POST-PLANARISATION CHIMICO-MÉCANIQUE DE CUIVRE
  申请人：CABOT MICROELECTRONICS CORP

  公开号：WO2014151361A1

  公开（公告）日：2014-09-25

  An aqueous cleaning composition for post copper chemical mechanical planarization is provided. The composition comprises an organic base, a copper etchant, an organic ligand, a corrosion inhibitor, and water, wherein the organic base is in a concentration of at least 200 ppm, the copper etchant is in a concentration of at least 200 ppm, the organic ligand is in a concentration of at least 50 ppm, and the corrosion inhibitor is in a concentration of at least 10 ppm. When used in the post copper chemical mechanical planarization cleaning procedure, the aqueous cleaning composition can effectively remove the residual contaminants from the wafer surface and reduce the defect counts on the wafer surface, while simultaneously, impart the wafers with a better surface roughness.