申请人:SUMITOMO CHEMICAL COMPANY, LIMITED
公开号:US20170329224A1
公开(公告)日:2017-11-16
A process for producing a photoresist pattern comprising steps (1) to (5);
(1) applying a photoresist composition onto a substrate, said photoresist composition comprising an acid generator and a resin which comprises a structural unit having an acid-liable group;
(2) drying the applied composition to form a composition layer;
(3) exposing the composition layer;
(4) heating the exposed composition layer; and
(5) developing the heated composition layer with a developer which comprises butyl acetate,
wherein a distance of Hansen solubility parameters between the resin and butyl acetate is from 3.3 to 4.3,
the distance is calculated from formula (1):
R
=(4×(δ
d
R
−15.8)
2
+(δ
p
R
−3.7)
2
+(δ
h
R
−6.3)
2
)
1/2
(1)
in which δd
R
represents a dispersion parameter of the resin, δp
R
represents a polarity parameter of the resin, δh
R
represents a hydrogen bonding parameter of the resin, and R represents the distance, and
a film retention ratio of the photoresist pattern relative to the composition layer is adjusted to 65% or more.