1-{2-[(1H-benzotriazol-1-ylmethyl)amino]phenyl}ethanone

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: 1-{2-[(1H-benzotriazol-1-ylmethyl)amino]phenyl}ethanone
• 英文别名: 1-[2-(benzotriazol-1-ylmethylamino)phenyl]ethanone
• 化学式: C₁₅H₁₄N₄O
• mdl: MFCD00426933
• 分子量: 266.3
• InChiKey: BGNCZFPTFROFBC-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.2
• 重原子数：
  20
• 可旋转键数：
  4
• 环数：
  3.0
• sp3杂化的碳原子比例：
  0.13
• 拓扑面积：
  59.8
• 氢给体数：
  1
• 氢受体数：
  4

文献信息

• Silicon-rich silsesquioxane resins
  申请人：Dow Silicones Corporation

  公开号：US11370888B2

  公开（公告）日：2022-06-28

  A silsesquioxane resin, photoresist composition comprising the silsesquioxane resin and a photoacid generator, etching mask composition comprising the silsesquioxane resin, products prepared therefrom, methods of making and using same, and manufactured articles and semiconductor devices containing same. The silsesquioxane resin comprises silicon-bonded hydrogen atom T-units and T-units having a silicon-bonded group of formula —CH2CH2CH2CO2C(R1a)3 or —CH(CH3)CH2CO2C(R1a)3, wherein each R1a is independently an unsubstituted (C1-C2)alkyl.

  一种含氢硅sesquioxane树脂，包括该含氢硅sesquioxane树脂和光酸产生剂的光刻胶组合物，包括该含氢硅sesquioxane树脂的蚀刻掩模组合物，由其制备的产品，制备和使用该组合物的方法，以及包含相同材料的制造物品和半导体器件。该含氢硅sesquioxane树脂包含硅结合的氢原子T单元和具有通式为—CH2CH2CH2CO2C(R1a)3或—CH(CH3)CH2CO2C(R1a)3的硅结合基团的T单元，其中每个R1a独立地为未被取代的(C1-C2)烷基。
• JP2009543135A
  申请人：——

  公开号：JP2009543135A

  公开（公告）日：2009-12-03
• SILSESQUIOXANE RESIN SYSTEMS WITH BASE ADDITIVES BEARING ELECTRON-ATTRACTING FUNCTIONALITIES
  申请人：Hu Sanlin

  公开号：US20090202941A1

  公开（公告）日：2009-08-13

  Silsesquioxane-based compositions that contain (a) silsesquioxane resins that contain HSiO3/2 units and RSiO 3/2 units wherein; R is an acid dissociable group, and (b) least one organic base additive selected from bulky tertiary amines, imides, amides and the polymeric amines wherein the organic base additive contains an electron-attracting group with the provision that the organic base additive is not 7-diethylamino-4-methylcoumarin. The silsesquioxane-based compositions are useful as positive resist compositions in forming patterned features on substrate, particularly useful for multi-layer layer (i.e. bilayer) 193 nm & 157 nm photolithographic applications.
• SILSESQUIOXANE RESIN AND SILYL-ANHYDRIDE COMPOSITION
  申请人：Dow Silicones Corporation

  公开号：US20190169436A1

  公开（公告）日：2019-06-06

  A silsesquioxane-containing composition comprising a silsesquioxane resin and a silyl-anhydride of formula (II) (see description), products prepared therefrom, photoresist compositions comprising the silsesquioxane-containing composition and a photoacid generator, products prepared therefrom, methods of making and using same, and manufactured articles and semiconductor devices containing same.
• SILICON-RICH SILSESQUIOXANE RESINS
  申请人：Dow Silicones Corporation

  公开号：US20190211155A1

  公开（公告）日：2019-07-11

  A silsesquioxane resin, photoresist composition comprising the silsesquioxane resin and a photoacid generator, etching mask composition comprising the silsesquioxane resin, products prepared therefrom, methods of making and using same, and manufactured articles and semiconductor devices containing same. The silsesquioxane resin comprises silicon-bonded hydrogen atom T-units and T-units having a silicon-bonded group of formula —CH 2 CH 2 CH 2 CO 2 C(R 1a ) 3 or —CH(CH 3 )CH 2 CO 2 C(R 1a ) 3 , wherein each R 1a is independently an unsubstituted (C 1 -C 2 )alkyl.