methacrylic acid 1-(1-ethyl-1-cyclopentyloxycarbonyl)methyl ester | 870450-56-9

• 分子结构分类: 有机化合物 - 有机酸及其衍生物 - 羧酸及其衍生物
• 英文名称: methacrylic acid 1-(1-ethyl-1-cyclopentyloxycarbonyl)methyl ester
• 英文别名: 2-[(1-Ethylcyclopentyl)oxy]-2-oxoethyl 2-methylprop-2-enoate；[2-(1-ethylcyclopentyl)oxy-2-oxoethyl] 2-methylprop-2-enoate
• CAS: 870450-56-9
• 化学式: C₁₃H₂₀O₄
• 分子量: 240.299
• InChiKey: KHZBKVHVOLBHFJ-UHFFFAOYSA-N

物化性质

• 沸点：
  311.2±25.0 °C(Predicted)
• 密度：
  1.06±0.1 g/cm3(Predicted)

计算性质

• 辛醇/水分配系数(LogP)：
  3
• 重原子数：
  17
• 可旋转键数：
  7
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.69
• 拓扑面积：
  52.6
• 氢给体数：
  0
• 氢受体数：
  4

反应信息

• 作为产物：
  描述：

  环戊酮 在 lithium 作用下， 以 四氢呋喃 、 甲苯 为溶剂， 反应 21.0h， 生成 methacrylic acid 1-(1-ethyl-1-cyclopentyloxycarbonyl)methyl ester
  参考文献：
  名称：

  一种双酯酸保护结构单体及其制备方法

  摘要：

  本发明涉及到光学材料领域，具体涉及到一种双酯酸保护结构单体及其制备方法。一种双酯酸保护结构单体，用作集成电路制作中所需光刻胶的原材料，因其具有双酯长侧链能够使光刻胶具有较好的成膜性能，又由于其悬挂在外的小体积、高酸敏基团能够提高光刻工艺中去保护反应效率，因此提高光刻产品的质量，此外通过本发明提供的工艺方法制得的双酯酸保护结构单体，具有较高的产率和纯度，进一步保证了光刻胶的性能。

  公开号：

  CN110590554A

文献信息

• Chemically amplified positive resist composition, (meth)acrylate derivative and a process for producing the same
  申请人：Takemoto Ichiki

  公开号：US20050266351A1

  公开（公告）日：2005-12-01

  The present invention provides a chemically amplified positive resist composition comprising (A) a resin which comprises (i) a structural unit of the formula (I) and (ii) at least one structural unit selected from the group consisting of structural units of the formulas (II), (III), (IV) and (V) and (B) an acid generator. The present invention further provides a novel monomers useful for the resist composition, and process for the monomers and the compositions.

  本发明提供了一种化学增感正性光阻组合物，包括(A)树脂，该树脂包括(i)公式(I)的结构单元和(ii)选自结构单元组的至少一个结构单元，所述结构单元组包括公式(II)、(III)、(IV)和(V)的结构单元，以及(B)酸发生剂。本发明还提供了一种新型单体，可用于制备光阻组合物，以及单体和组合物的制备方法。
• METHOD OF FORMING POLYMERIC COMPOUND, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN
  申请人：Tokyo Ohka Kogyo Co., Ltd.

  公开号：US20130137049A1

  公开（公告）日：2013-05-30

  A method of producing a polymeric compound, including: copolymerizing a monomer containing an —SO 2 — containing cyclic group with a monomer containing an acid decomposable group which exhibits increased polarity by the action of acid, thereby obtaining the polymeric compound, provided that the polymeric compound comprises no structural unit derived from a monomer that generates acid upon exposure, wherein the copolymerizing is conducted in the presence of 0.001 to 1.0 mol % of a basic compound, based on the monomer containing an —SO 2 — containing cyclic group.
• RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN
  申请人：Tokyo Ohka Kogyo Co., Ltd.

  公开号：US20140363772A1

  公开（公告）日：2014-12-11

  A resist composition including a high-molecular weight compound having a constituent unit represented by general formula (a0-1), a constituent unit (a1) containing a group containing a monocyclic group or a chain group among acid decomposable groups whose polarity increases by action of acid, a constituent unit (a1′) containing a group containing a polycyclic group among acid decomposable groups whose polarity increases by the action of an acid, and a constituent unit (a2) containing a lactone-containing monocyclic group, with a proportion of the constituent unit (a1) being equal to a proportion of the constituent unit (a1′) or more; and a method for forming a resist pattern using the resist composition.
• POLYMERS AND PHOTORESIST COMPOSITIONS
  申请人：ROHM AND HAAS ELECTRONIC MATERIALS LLC

  公开号：US20210108065A1

  公开（公告）日：2021-04-15

  A polymer comprising: a first repeating unit comprising a tertiary ester acid labile group; and a second repeating unit of Formula (1): wherein R 1 to R 5 are as provided herein; R 2 and R 3 together do not form a ring; each A is independently a halogen, a carboxylic acid or ester, a thiol, a straight chain or branched C 1-20 alkyl, a monocyclic or polycyclic C 3-20 cycloalkyl, a monocyclic or polycyclic C 3-20 fluorocycloalkenyl, a monocyclic or polycyclic C 3-20 heterocycloalkyl, a monocyclic or polycyclic C 6-20 aryl, or a monocyclic or polycyclic C 4-20 heteroaryl, each of which is substituted or unsubstituted; and m is an integer of 0 to 4.
• PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS
  申请人：ROHM AND HAAS ELECTRONIC MATERIALS LLC

  公开号：US20220019143A1

  公开（公告）日：2022-01-20

  A photoresist composition comprising: a first polymer comprising a first repeating unit comprising a hydroxy-aryl group and a second repeating unit comprising an acid-labile group; a second polymer comprising a first repeating unit comprising an acid-labile group, a second repeating unit comprising a lactone group, and a third repeating unit comprising a base-soluble group, wherein the base-soluble group has a pKa of less than or equal to 12, and wherein the base-soluble group does not comprise a hydroxy-substituted aryl group; a photoacid generator; and a solvent, wherein the first polymer and the second polymer are different from each other.