Butan-2-ol;2-ethyl-3-methyloxirane

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: Butan-2-ol;2-ethyl-3-methyloxirane
• 英文别名: butan-2-ol;2-ethyl-3-methyloxirane
• 化学式: C9H20O2
• 分子量: 160.25
• InChiKey: JXQBZQGCRSHCIO-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.96
• 重原子数：
  11
• 可旋转键数：
  2
• 环数：
  1.0
• sp3杂化的碳原子比例：
  1.0
• 拓扑面积：
  32.8
• 氢给体数：
  1
• 氢受体数：
  2

文献信息

• COPPER COMPOUND, STARTING MATERIAL FOR FORMING THIN FILM AND METHOD FOR PRODUCING THIN FILM
  申请人：Adeka Corporation

  公开号：EP3144293A1

  公开（公告）日：2017-03-22

  This invention provides a copper compound represented by General Formula (I) below. In General Formula (I), R1 to R3 independently represent a linear or branched alkyl group with a carbon number of 1 to 5; provided that R1 and R2 are a methyl group, R3 represents a linear or branched alkyl group with a carbon number of 2 to 5; and provided that R1 is a methyl group and R2 is an ethyl group, R3 represents a methyl group or a linear or branched alkyl group with a carbon number of 3 to 5. A starting material for forming a thin film of the present invention includes the copper compound represented by General Formula (I). The present invention can provide a copper compound which has a low melting point, can be conveyed in a liquid state, has a high vapor pressure, and is easily vaporizable, and also a starting material for forming a thin film which uses such a copper compound.

  本发明提供了由下式（I）表示的铜化合物。在通式（I）中，R1 至 R3 独立地代表碳原子数为 1 至 5 的直链或支链烷基；如果 R1 和 R2 是甲基，R3 代表碳原子数为 2 至 5 的直链或支链烷基；如果 R1 是甲基，R2 是乙基，R3 代表甲基或碳原子数为 3 至 5 的直链或支链烷基。用于形成本发明薄膜的起始材料包括通式（I）所代表的铜化合物。本发明可提供一种熔点低、能以液态输送、蒸汽压高且易汽化的铜化合物，以及一种使用这种铜化合物形成薄膜的起始材料。
• Alkoxide compound and raw material for forming thin film
  申请人：Wada Senji

  公开号：US10118940B2

  公开（公告）日：2018-11-06

  An alkoxide compound represented by the following formula (I), and a raw material for thin film formation containing the alkoxide compound. In the formula, R1 represents a linear or branched alkyl group having 2 to 4 carbon atoms, and R2 and R3 each represent a linear or branched alkyl group having 1 to 4 carbon atoms. In the formula (I), R1 is preferably an ethyl group. It is also preferred that one or both of R2 and R3 be an ethyl group. The raw material for thin film formation including an alkoxide compound represented by general formula (I) is preferably used as a raw material for chemical vapor deposition.

  一种由下式（I）表示的烷氧基化合物，以及一种含有该烷氧基化合物的薄膜形成原料。式中，R1 代表具有 2 至 4 个碳原子的直链或支链烷基，R2 和 R3 分别代表具有 1 至 4 个碳原子的直链或支链烷基。在式 (I) 中，R1 最好是乙基。R2 和 R3 中的一个或两个最好也是乙基。包括通式 (I) 所代表的氧化烷化合物的薄膜形成原料最好用作化学气相沉积的原料。
• ALKOXIDE COMPOUND AND RAW MATERIAL FOR FORMING THIN FILM
  申请人：ADEKA CORPORATION

  公开号：US20140174323A1

  公开（公告）日：2014-06-26

  An alkoxide compound represented by the following formula (I), and a raw material for thin film formation containing the alkoxide compound. In the formula, R 1 represents a linear or branched alkyl group having 2 to 4 carbon atoms, and R 2 and R 3 each represent a linear or branched alkyl group having 1 to 4 carbon atoms. In the formula (I), R 1 is preferably an ethyl group. It is also preferred that one or both of R 2 and R 3 be an ethyl group. The raw material for thin film formation including an alkoxide compound represented by general formula (I) is preferably used as a raw material for chemical vapor deposition.
• COPPER COMPOUND, STARTING MATERIAL FOR FORMING THIN FILM, AND METHOD FOR MANUFACTURING THIN FILM
  申请人：ADEKA CORPORATION

  公开号：US20170044188A1

  公开（公告）日：2017-02-16

  This invention provides a copper compound represented by General Formula (I) below. In General Formula (I), R 1 to R 3 independently represent a linear or branched alkyl group with a carbon number of 1 to 5; provided that R 1 and R 2 are a methyl group, R 3 represents a linear or branched alkyl group with a carbon number of 2 to 5; and provided that R 1 is a methyl group and R 2 is an ethyl group, R 3 represents a methyl group or a linear or branched alkyl group with a carbon number of 3 to 5. A starting material for forming a thin film of the present invention includes the copper compound represented by General Formula (I). The present invention can provide a copper compound which has a low melting point, can be conveyed in a liquid state, has a high vapor pressure, and is easily vaporizable, and also a starting material for forming a thin film which uses such a copper compound.
• US9994593B2
  申请人：——

  公开号：US9994593B2

  公开（公告）日：2018-06-12