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(6,6,6-Trifluoro-5-hydroxy-2,2,5-trimethylhexan-3-yl) 2-methylprop-2-enoate

中文名称
——
中文别名
——
英文名称
(6,6,6-Trifluoro-5-hydroxy-2,2,5-trimethylhexan-3-yl) 2-methylprop-2-enoate
英文别名
(6,6,6-trifluoro-5-hydroxy-2,2,5-trimethylhexan-3-yl) 2-methylprop-2-enoate
(6,6,6-Trifluoro-5-hydroxy-2,2,5-trimethylhexan-3-yl) 2-methylprop-2-enoate化学式
CAS
——
化学式
C13H21F3O3
mdl
——
分子量
282.3
InChiKey
CKUNDTWLVHTUDE-UHFFFAOYSA-N
BEILSTEIN
——
EINECS
——
  • 物化性质
  • 计算性质
  • ADMET
  • 安全信息
  • SDS
  • 制备方法与用途
  • 上下游信息
  • 反应信息
  • 文献信息
  • 表征谱图
  • 同类化合物
  • 相关功能分类
  • 相关结构分类

计算性质

  • 辛醇/水分配系数(LogP):
    3.9
  • 重原子数:
    19
  • 可旋转键数:
    6
  • 环数:
    0.0
  • sp3杂化的碳原子比例:
    0.77
  • 拓扑面积:
    46.5
  • 氢给体数:
    1
  • 氢受体数:
    6

文献信息

  • Topcoat compositions and pattern-forming methods
    申请人:Rohm and Haas Electronic Materials LLC
    公开号:US10042259B2
    公开(公告)日:2018-08-07
    Topcoat compositions comprise: a matrix polymer; a surface active polymer comprising a polymerized unit formed from a monomer of the following general formula (I): wherein: R1 represents H, F, methyl or fluorinated methyl; R2 represents optionally substituted C1 to C8 alkylene or optionally substituted C1 to C8 fluoroalkylene, optionally comprising one or more heteroatom; R3 represents H, F, optionally substituted C1 to C10 alkyl or optionally substituted C5 to C15 aryl, optionally comprising one or more heteroatom; R4 represents optionally substituted C1 to C8 alkyl, optionally substituted C1 to C8 fluoroalkyl or optionally substituted C5 to C15 aryl, optionally comprising one or more heteroatom; X represents O, S or NR5, wherein R5 is chosen from hydrogen and optionally substituted C1 to C5 alkyl; and a is 0 or 1; and a solvent. Also provided are coated substrates and pattern-forming methods which make use of the topcoat compositions. The invention has particular applicability in photolithographic processes as a photoresist topcoat layer in the manufacture of semiconductor devices.
    面漆组合物包括:基质聚合物;表面活性聚合物,该聚合物由以下通式 (I) 的单体聚合而成: 其中R1 代表 H、F、甲基或化甲基; R2 代表任选取代的 C1 至 C8 亚烷基或任选取代的 C1 至 C8 亚烷基,任选包含一个或多个杂原子; R3 代表 H、F、任选取代的 C1 至 C10 烷基或任选取代的 C5 至 C15 芳基,任选包含一个或多个杂原子;R4 代表任选取代的 C1 至 C8 烷基、任选取代的 C1 至 C8 氟烷基或任选取代的 C5 至 C15 芳基,任选包含一个或多个杂原子;X 代表 O、S 或 NR5,其中 R5 选自氢和任选取代的 C1 至 C5 烷基;a 为 0 或 1;以及溶剂。本发明还提供了涂层基底和图案形成方法,这些基底和方法都使用了本发明的面漆组合物。本发明特别适用于光刻工艺,作为制造半导体器件的光刻胶面涂层。
  • TOPCOAT COMPOSITIONS AND PATTERN-FORMING METHODS
    申请人:Rohm and Haas Electronic Materials LLC
    公开号:US20180118970A1
    公开(公告)日:2018-05-03
    Topcoat compositions comprise: a matrix polymer; a surface active polymer comprising a polymerized unit formed from a monomer of the following general formula (I): wherein: R 1 represents H, F, methyl or fluorinated methyl; R 2 represents optionally substituted C1 to C8 alkylene or optionally substituted C1 to C8 fluoroalkylene, optionally comprising one or more heteroatom; R 3 represents H, F, optionally substituted C1 to C10 alkyl or optionally substituted C5 to C15 aryl, optionally comprising one or more heteroatom; R 4 represents optionally substituted C1 to C8 alkyl, optionally substituted C1 to C8 fluoroalkyl or optionally substituted C5 to C15 aryl, optionally comprising one or more heteroatom; X represents O, S or NR 5 , wherein R 5 is chosen from hydrogen and optionally substituted C1 to C5 alkyl; and a is 0 or 1; and a solvent. Also provided are coated substrates and pattern-forming methods which make use of the topcoat compositions. The invention has particular applicability in photolithographic processes as a photoresist topcoat layer in the manufacture of semiconductor devices.
  • TOPCOAT COMPOSITIONS CONTAINING FLUORINATED THERMAL ACID GENERATORS
    申请人:Rohm and Haas Electronic Materials LLC
    公开号:US20180118968A1
    公开(公告)日:2018-05-03
    Provided are topcoat compositions that include: a matrix polymer; a surface active polymer; an ionic thermal acid generator comprising an anion and a cation, wherein the anion, the cation, or the anion and the cation are fluorinated; and a solvent. Also provided are coated substrates and pattern-forming methods which make use of the topcoat compositions. The invention has particular applicability in photolithographic processes as a photoresist topcoat layer in the manufacture of semiconductor devices.
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