2-Butylsulfanyl-2-cyclohexyl-1-phenylethanone

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: 2-Butylsulfanyl-2-cyclohexyl-1-phenylethanone
• 英文别名: 2-butylsulfanyl-2-cyclohexyl-1-phenylethanone
• 化学式: C₁₈H₂₆OS
• 分子量: 290.5
• InChiKey: GBPRETNBSPTMIS-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  5.9
• 重原子数：
  20
• 可旋转键数：
  7
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.61
• 拓扑面积：
  42.4
• 氢给体数：
  0
• 氢受体数：
  2

文献信息

• [EN] PATTERN FORMING METHOD, COMPOUND USED THEREIN, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, AND ELECTRONIC DEVICE<br/>[FR] PROCÉDÉ DE FORMATION DE MOTIFS, COMPOSÉ UTILISÉ DANS CE PROCÉDÉ, COMPOSITION DE RÉSINE SENSIBLE AUX RAYONS ACTINIQUES OU SENSIBLE AU RAYONNEMENT, FILM DE RÉSERVE, PROCÉDÉ DE FABRICATION D'UN DISPOSITIF ÉLECTRONIQUE, ET DISPOSITIF ÉLECTRONIQUE
  申请人：FUJIFILM CORP

  公开号：WO2014119698A1

  公开（公告）日：2014-08-07

  There is provided an actinic ray-sensitive or radiation-sensitive resin composition comprising: (A) a resin having a group capable of decomposing by an action of an acid to produce a polar group, (C1) a compound containing a group capable of generating a first acidic functional group upon irradiation with an actinic ray or radiation and a group capable of generating a second acidic functional group different from the first acidic functional group upon irradiation with an actinic ray or radiation, and (C2) at least one compound containing two or more groups selected from the group consisting of the groups capable of generating the structures represented by the specific formulae upon irradiation with an actinic ray or radiation.
• [EN] PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE AND COMPOUND<br/>[FR] PROCÉDÉ DE FORMATION DE MOTIF, COMPOSITION DE RÉSINE SENSIBLE À DES RAYONS ACTINIQUES OU À UN RAYONNEMENT, FILM DE RÉSERVE, PROCÉDÉ DE FABRICATION DE DISPOSITIF ÉLECTRONIQUE, DISPOSITIF ET COMPOSÉ ÉLECTRONIQUES
  申请人：FUJIFILM CORP

  公开号：WO2014133187A1

  公开（公告）日：2014-09-04

  There is provided a pattern forming method comprising (i) a step of forming a film containing an actinic ray-sensitive or radiation-sensitive resin composition containing (A) a compound represented by the specific formula, (B) a compound different from the compound (A) and capable of generating an acid upon irradiation with an actinic ray or radiation, and (P) a resin that does not react with the acid generated from the compound (A) and is capable of decreasing the solubility for an organic solvent-containing developer by the action of the acid generated from the compound (B), (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern; the actinic ray-sensitive or radiation-sensitive resin composition above; a resist film using the composition.