2,3,4-Trimethyl-5-oxotetrahydrofuran-3-yl methacrylate

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 内酯类
• 英文名称: 2,3,4-Trimethyl-5-oxotetrahydrofuran-3-yl methacrylate
• 英文别名: (2,3,4-trimethyl-5-oxooxolan-3-yl) 2-methylprop-2-enoate
• 化学式: C₁₁H₁₆O₄
• 分子量: 212.246
• InChiKey: DPDGTSLRECIPSE-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  1.9
• 重原子数：
  15
• 可旋转键数：
  3
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.64
• 拓扑面积：
  52.6
• 氢给体数：
  0
• 氢受体数：
  4

反应信息

• 作为产物：
  描述：

  Tert-butyl 3-hydroxy-2,3-dimethyl-4-(2-methylprop-2-enoyloxy)pentanoate 在 甲烷磺酸 作用下， 以 甲苯 为溶剂， 反应 12.0h， 以77%的产率得到2,3,4-Trimethyl-5-oxotetrahydrofuran-3-yl methacrylate
  参考文献：
  名称：

  単量体の製造方法

  摘要：

  这是一篇描述制造用于光刻胶材料的单体的专利申请。 该单体具有优异的保存稳定性，不仅可用于传统的碱性显影形成正型图案，而且在有机溶剂显影中可用于形成正负反转的图像，具有高溶解度对比度、酸扩散控制和低粗糙度等特性。 制造该单体的方法是通过作用于金属基或1A族、2A族、2B族金属中选择的金属，制备金属烯醇试剂，并通过反应式（1）中所示的烯醇试剂和酰氧基酮反应来制造单体。 注：此为机翻结果，仅供参考。

  公开号：

  JP2015227326A

文献信息

• MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20150322027A1

  公开（公告）日：2015-11-12

  A monomer (1) is prepared by reacting a compound (9) with a base or metal to form a metal enolate reagent, and reacting the metal enolate reagent with an acyloxyketone compound (8). A polymer derived from the monomer is used as base resin to formulate a resist composition, which is shelf stable and displays a high dissolution contrast, controlled acid diffusion and low roughness in forming positive pattern via alkaline development and in forming negative pattern via organic solvent development.

  一种单体（1）是通过将一种化合物（9）与碱或金属反应形成金属烯醇盐试剂，然后将金属烯醇盐试剂与一种酰氧基酮化合物（8）反应而制备的。由该单体派生出的聚合物用作基础树脂，以配制一种光刻胶组合物，该组合物在常温下稳定，显示出高溶解对比度、控制的酸性扩散和在碱性显影形成正图案以及有机溶剂显影形成负图案时低粗糙度。
• METHOD FOR MANUFACTRURING BETA-(METH)ACRYLOYLOXY-GAMMA-BUTYROLACTONES
  申请人：JNC CORPORATION

  公开号：US20150126753A1

  公开（公告）日：2015-05-07

  The art relates to provision of a method for manufacturing an (meth)acrylic polymerizable monomer that can be used in various applications, such as an optical material, a resist material, a coating material and a laminate material, and provision of a new β-(meth)acryloyloxy-γ-butyrolactone compound by applying the manufacturing method. The method for manufacturing the β-(meth)acryloyloxy-γ-butyrolactone compound is described, in which a (meth)acrylate compound having a carbonyl group and a ketene compound are condensed and isomerized. Further, the manufacturing method is applied to the new β-(meth)acryloyloxy-γ-butyrolactone compound.

  这项艺术涉及提供一种用于制造（甲基）丙烯酸酯聚合单体的方法，该单体可用于各种应用，如光学材料、抗蚀材料、涂料和层压材料，并通过应用该制造方法提供一种新的β-(甲基)丙烯酰氧基-γ-丁内酯化合物。描述了制造β-(甲基)丙烯酰氧基-γ-丁内酯化合物的方法，其中将具有羰基的（甲基）丙烯酸酯化合物与酮烯化合物进行缩合和异构化。此外，该制造方法应用于新的β-(甲基)丙烯酰氧基-γ-丁内酯化合物。
• MONOMER, POLYMER, POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20170008982A1

  公开（公告）日：2017-01-12

  A polymer comprising recurring units derived from a polymerizable monomer having two structures of hydroxyphenyl methacrylate having a hydroxy group substituted with an acid labile group is used as base resin in a positive resist composition, especially chemically amplified positive resist composition. The resist composition forms a resist film which is processed by lithography into a pattern of good profile having a high resolution, minimal edge roughness, and etch resistance.

  一种聚合物，包含由可聚合单体衍生的重复单元，该单体具有两种羟基苯甲酸甲酯结构，羟基上取代有酸不稳定基团，作为正性光刻胶组成中的基础树脂，尤其是化学放大正性光刻胶组成中。该光刻胶组成形成一种光刻胶膜，通过光刻技术加工成具有高分辨率、最小边缘粗糙度和蚀刻抗性的良好轮廓图案。
• RESIST COMPOSITION AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：EP2993520B1

  公开（公告）日：2017-03-08
• PATTERN FORMING PROCESS AND SHRINK AGENT
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20160139512A1

  公开（公告）日：2016-05-19

  A negative pattern is formed by applying a resist composition onto a substrate, exposing the resist film, and developing the exposed resist film in an organic solvent developer. The process further involves coating the negative pattern with a shrink agent solution of a polymer comprising recurring units capable of forming lactone under the action of acid in a C 7 -C 16 ester or C 8 -C 16 ketone solvent, baking the coating, and removing the excessive shrink agent via organic solvent development for thereby shrinking the size of spaces in the pattern.