(3-Ethyl-4,4-dimethyl-5-oxooxolan-3-yl) 2-methylprop-2-enoate

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 内酯类
• 英文名称: (3-Ethyl-4,4-dimethyl-5-oxooxolan-3-yl) 2-methylprop-2-enoate
• 英文别名: (3-ethyl-4,4-dimethyl-5-oxooxolan-3-yl) 2-methylprop-2-enoate
• 化学式: C₁₂H₁₈O₄
• 分子量: 226.27
• InChiKey: NEGZSUNHQGTANH-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.4
• 重原子数：
  16
• 可旋转键数：
  4
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.67
• 拓扑面积：
  52.6
• 氢给体数：
  0
• 氢受体数：
  4

文献信息

• PATTERN FORMING PROCESS AND SHRINK AGENT
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20160139512A1

  公开（公告）日：2016-05-19

  A negative pattern is formed by applying a resist composition onto a substrate, exposing the resist film, and developing the exposed resist film in an organic solvent developer. The process further involves coating the negative pattern with a shrink agent solution of a polymer comprising recurring units capable of forming lactone under the action of acid in a C 7 -C 16 ester or C 8 -C 16 ketone solvent, baking the coating, and removing the excessive shrink agent via organic solvent development for thereby shrinking the size of spaces in the pattern.
• PATTERN FORMING PROCESS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20170010537A1

  公开（公告）日：2017-01-12

  A negative tone pattern is formed by coating a resist composition onto a substrate, prebaking to form a resist film, exposing the resist film to high-energy radiation, PEB the resist film in a high-humidity environment, and developing the resist film in an organic solvent developer. PEB in a high-humidity environment is effective for reducing the shrinkage of the resist film during the step and thus preventing the trench pattern from deformation.
• US9618850B2
  申请人：——

  公开号：US9618850B2

  公开（公告）日：2017-04-11
• US9632415B2
  申请人：——

  公开号：US9632415B2

  公开（公告）日：2017-04-25
• US9658532B2
  申请人：——

  公开号：US9658532B2

  公开（公告）日：2017-05-23