(4-Cyano-3-oxo-4-propyl-2-oxabicyclo[3.2.0]heptan-7-yl) 2,2-dimethylpropanoate

• 分子结构分类: 有机化合物 - 有机杂环化合物 - 内酯类
• 英文名称: (4-Cyano-3-oxo-4-propyl-2-oxabicyclo[3.2.0]heptan-7-yl) 2,2-dimethylpropanoate
• 英文别名: (4-cyano-3-oxo-4-propyl-2-oxabicyclo[3.2.0]heptan-7-yl) 2,2-dimethylpropanoate
• 化学式: C₁₅H₂₁NO₄
• 分子量: 279.33
• InChiKey: OSQKBEVDSWPEII-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  2.9
• 重原子数：
  20
• 可旋转键数：
  5
• 环数：
  2.0
• sp3杂化的碳原子比例：
  0.8
• 拓扑面积：
  76.4
• 氢给体数：
  0
• 氢受体数：
  5

文献信息

• [EN] PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE, ELECTRONIC DEVICE AND COMPOUND<br/>[FR] PROCÉDÉ DE FORMATION DE MOTIF, COMPOSITION DE RÉSINE SENSIBLE À DES RAYONS ACTINIQUES OU À UN RAYONNEMENT, FILM DE RÉSERVE, PROCÉDÉ DE FABRICATION DE DISPOSITIF ÉLECTRONIQUE, DISPOSITIF ET COMPOSÉ ÉLECTRONIQUES
  申请人：FUJIFILM CORP

  公开号：WO2014133187A1

  公开（公告）日：2014-09-04

  There is provided a pattern forming method comprising (i) a step of forming a film containing an actinic ray-sensitive or radiation-sensitive resin composition containing (A) a compound represented by the specific formula, (B) a compound different from the compound (A) and capable of generating an acid upon irradiation with an actinic ray or radiation, and (P) a resin that does not react with the acid generated from the compound (A) and is capable of decreasing the solubility for an organic solvent-containing developer by the action of the acid generated from the compound (B), (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern; the actinic ray-sensitive or radiation-sensitive resin composition above; a resist film using the composition.