(4-Acetyl-3-hydroxyphenyl) 2,2-dimethylbutanoate

• 分子结构分类: 有机化合物 - 有机氧化合物
• 英文名称: (4-Acetyl-3-hydroxyphenyl) 2,2-dimethylbutanoate
• 英文别名: (4-acetyl-3-hydroxyphenyl) 2,2-dimethylbutanoate
• 化学式: C₁₄H₁₈O₄
• 分子量: 250.29
• InChiKey: KZJXWXHGRICARW-UHFFFAOYSA-N

计算性质

• 辛醇/水分配系数(LogP)：
  3.5
• 重原子数：
  18
• 可旋转键数：
  5
• 环数：
  1.0
• sp3杂化的碳原子比例：
  0.43
• 拓扑面积：
  63.6
• 氢给体数：
  1
• 氢受体数：
  4

文献信息

• MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20170131635A1

  公开（公告）日：2017-05-11

  A monomer of formula (1a) or (1b) is provided wherein A is a polymerizable group, R 1 -R 6 are monovalent hydrocarbon groups, X 1 is a divalent hydrocarbon group, Z 1 is an aliphatic group, Z 2 forms an alicyclic group, k=0 or 1, m=1 or 2, n=1 to 4. A useful polymer is obtained by polymerizing the monomer. A resist composition comprising the polymer has improved development properties and is processed to form a negative pattern having high contrast, high resolution and etch resistance which is insoluble in alkaline developer.

  提供了一个化学式为（1a）或（1b）的单体，其中A是一个可聚合的基团，R1-R6是一价碳氢基团，X1是一个二价碳氢基团，Z1是一个脂肪基团，Z2形成一个脂环基团，k=0或1，m=1或2，n=1到4。通过聚合单体得到了一种有用的聚合物。包含该聚合物的抗蚀组合物具有改善的显影性能，并且经过处理形成具有高对比度、高分辨率和耐蚀性的负图案，该负图案在碱性显影剂中不溶。
• RESIST COMPOSITION, PATTERNING PROCESS, AND BARIUM, CESIUM AND CERIUM SALTS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20170115566A1

  公开（公告）日：2017-04-27

  A resist composition comprising a base resin comprising acid labile group-containing recurring units and preferably acid generator-containing recurring units, and a sodium, magnesium, potassium, calcium, rubidium, strontium, yttrium, cesium, barium or cerium salt of α-fluorinated sulfonic acid bonded to an alkyl, alkenyl, alkynyl or aryl group exhibits a high resolution and sensitivity and forms a pattern of satisfactory profile with minimal LWR after exposure and development.

  一种抗蚀组合物包括基树脂，其中包含含酸敏感基团的重复单元，最好包含含酸发生剂的重复单元，以及与烷基、烯基、炔基或芳基结合的α-氟磺酸的钠、镁、钾、钙、铷、锶、钇、铯、钡或铈盐，表现出高分辨率和灵敏度，并在曝光和显影后形成具有最小LWR的满意轮廓图案。
• MONOMER, POLYMER, POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US20170008982A1

  公开（公告）日：2017-01-12

  A polymer comprising recurring units derived from a polymerizable monomer having two structures of hydroxyphenyl methacrylate having a hydroxy group substituted with an acid labile group is used as base resin in a positive resist composition, especially chemically amplified positive resist composition. The resist composition forms a resist film which is processed by lithography into a pattern of good profile having a high resolution, minimal edge roughness, and etch resistance.

  一种聚合物，包含由可聚合单体衍生的重复单元，该单体具有两种羟基苯甲酸甲酯结构，羟基上取代有酸不稳定基团，作为正性光刻胶组成中的基础树脂，尤其是化学放大正性光刻胶组成中。该光刻胶组成形成一种光刻胶膜，通过光刻技术加工成具有高分辨率、最小边缘粗糙度和蚀刻抗性的良好轮廓图案。
• Positive resist composition and pattern forming process
  申请人：Shin-Etsu Chemical Co., Ltd.

  公开号：US10012902B2

  公开（公告）日：2018-07-03

  A non-chemically-amplified positive resist composition comprising a polymer comprising both recurring units derived from a sulfonium salt capable of generating a fluorinated acid and recurring units containing an amino group as a base resin exhibits a high resolution and a low edge roughness and forms a pattern of good profile after exposure and organic solvent development.

  一种非化学扩增的正抗蚀剂组合物，由一种聚合物组成，这种聚合物既包括从能生成氟化酸的锍盐中提取的递归单元，也包括作为基体树脂的含有氨基的递归单元，在曝光和有机溶剂显影后，该组合物具有高分辨率和低边缘粗糙度，并能形成轮廓良好的图案。
• POLYMER, MONOMER, RESIST COMPOSITION, AND PATTERNING PROCESS
  申请人：SHIN-ETSU CHEMICAL CO., LTD.

  公开号：US20160342086A1

  公开（公告）日：2016-11-24

  A pattern forming process is provided comprising the steps of applying a resist composition comprising a polymer comprising recurring units having formula (1a) and/or (1b), an acid generator and a solvent onto a substrate, baking to form a resist film, exposing the resist film to high-energy radiation, baking, and developing in an alkaline developer to form a negative tone pattern.